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1. 发明授权

US08723172B2 Display device, thin film transistor array substrate and thin film transistor having oxide semiconductor 有权
标题翻译：显示装置，薄膜晶体管阵列基板和具有氧化物半导体的薄膜晶体管
公开(公告)号：US08723172B2
公开(公告)日：2014-05-13
申请号：US12699058
申请日：2010-02-03
申请人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
发明人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L21/00 , H01L21/16
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
摘要翻译：提供了包括薄膜晶体管阵列基板，透明电极基板和设置在其间的显示介质层的显示装置。薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。在每个薄膜晶体管中，栅极电极和栅极绝缘层依次设置在衬底上，并且栅电极被栅极绝缘层覆盖。氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。由于氧化物半导体层由透明材料制成，所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。因此，能够降低反射型显示装置的制造工序的成本和耗时。

2. 发明授权

US08242495B2 Digital X-ray detecting panel and method for manufacturing the same 有权
标题翻译：数字X射线检测面板及其制造方法
公开(公告)号：US08242495B2
公开(公告)日：2012-08-14
申请号：US12699033
申请日：2010-02-02
申请人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
发明人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
IPC分类号： H01L29/10 , H01L29/12 , H01L27/01 , H01L27/12
CPC分类号： H01L31/105 , H01L27/14659 , H01L31/1085 , H01L31/115
摘要： A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
摘要翻译：数字X射线检测面板包括波长转换层和光电检测板。波长转换层被配置为将X射线转换成可见光。光电检测板设置在波长转换层的下方。光电检测板包括基板和设置在基板上并排列成阵列的多个光电检测单元。每个光电检测单元包括薄膜晶体管和与薄膜晶体管电连接的光电二极管。薄膜晶体管具有氧化物半导体层。数字X射线检测面板可以避免薄膜晶体管中的光电流，从而提高数字X射线检测面板的检测精度。还提供了一种用于制造数字X射线检测面板的方法。

3. 发明授权

US08748222B2 Method for forming oxide thin film transistor 有权
标题翻译：氧化物薄膜晶体管的形成方法
公开(公告)号：US08748222B2
公开(公告)日：2014-06-10
申请号：US12774562
申请日：2010-05-05
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
IPC分类号： H01L21/00 , H01L29/786 , H01L29/10 , H01L21/34
CPC分类号： H01L29/78693 , H01L21/34 , H01L29/1083 , H01L29/78609
摘要： A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
摘要翻译：制造氧化物薄膜晶体管的方法包括以下步骤：分别形成栅极，漏极，源电极和氧化物半导体层。氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。该方法还包括沉积氧化硅的介电层的步骤，并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。一氧化二氮的流量在10至200标准立方厘米每分钟（SCCM）的范围内。通过上述方法制造的氧化物薄膜晶体管具有漏电流低，迁移率高的优点，其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。

4. 发明授权

US08389310B2 Method for manufacturing oxide thin film transistor and method for manufacturing display device 有权
标题翻译：制造氧化物薄膜晶体管的方法及显示装置的制造方法
公开(公告)号：US08389310B2
公开(公告)日：2013-03-05
申请号：US12699063
申请日：2010-02-03
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Tsai
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L21/02617 , H01L29/66969 , H01L29/7869
摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
摘要翻译：制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。本发明还提供一种显示装置的制造方法。可以提高显示装置的显示质量。

5. 发明申请

US20110159618A1 Method for Manufacturing Oxide Thin Film Transistor and Method for Manufacturing Display Device 有权
标题翻译：制造氧化物薄膜晶体管的方法及制造显示装置的方法
公开(公告)号：US20110159618A1
公开(公告)日：2011-06-30
申请号：US12699063
申请日：2010-02-03
申请人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Ysai
发明人： Ted-Hong Shinn , Henry Wang , Fang-An Shu , Yao-Chou Ysai
IPC分类号： H01L33/00 , H01L21/44
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L21/02617 , H01L29/66969 , H01L29/7869
摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
摘要翻译：制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。本发明还提供一种显示装置的制造方法。可以提高显示装置的显示质量。

6. 发明授权

US08927983B2 Thin film transistor substrate and method fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08927983B2
公开(公告)日：2015-01-06
申请号：US13589172
申请日：2012-08-19
申请人： Wen-Chung Tang , Fang-An Shu , Yao-Chou Tsai , Ted-Hong Shinn
发明人： Wen-Chung Tang , Fang-An Shu , Yao-Chou Tsai , Ted-Hong Shinn
IPC分类号： H01L29/10 , H01L29/12 , H01L21/02 , H01L21/00 , H01L27/12
CPC分类号： H01L27/124 , H01L27/1259
摘要： Disclosed herein is a thin film transistor array substrate. The thin film transistor array substrate includes a display area and a non-display area. The non-display area includes a signal line, a connecting line and a metal contact. The connecting line is formed in a first patterned metal layer. The signal line and the metal contact are formed in a second patterned metal layer. The connecting line is connected to the signal line by a first through-hole, and the connecting line is connected to the metal contact by a second through-hole. Furthermore, a method of fabricating the thin film transistor array substrate is also disclosed.
摘要翻译：这里公开了薄膜晶体管阵列基板。薄膜晶体管阵列基板包括显示区域和非显示区域。非显示区域包括信号线，连接线和金属触点。连接线形成在第一图案化金属层中。信号线和金属接触形成在第二图案化金属层中。连接线通过第一通孔连接到信号线，并且连接线通过第二通孔连接到金属接触。此外，还公开了制造薄膜晶体管阵列基板的方法。

7. 发明授权

US08884869B2 Court border module using display apparatus 有权
标题翻译：法院边界模块使用显示装置
公开(公告)号：US08884869B2
公开(公告)日：2014-11-11
申请号：US13612864
申请日：2012-09-13
申请人： Yao-Chou Tsai , Fang-An Shu , Chia-Chun Yeh , Ted-Hong Shinn
发明人： Yao-Chou Tsai , Fang-An Shu , Chia-Chun Yeh , Ted-Hong Shinn
IPC分类号： G09G3/34 , A63C19/06
CPC分类号： A63B71/0605 , A63B2071/0611
摘要： A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.
摘要翻译：公开了使用显示装置的法庭边界模块，其使用压电元件来驱动显示装置。当球撞到由显示装置限定的球场边界时，向压电元件施加力，然后产生动力以驱动显示装置的相应部分。由球击中的显示装置的一部分的颜色被切换。因此，官方和其他人可以观察到法院边界颜色的变化，以便即时和客观地确定球是否已经触及法庭边界。

8. 发明授权

US08755109B2 Color electronic paper device and manufacturing method thereof 有权
标题翻译：彩色电子纸装置及其制造方法
公开(公告)号：US08755109B2
公开(公告)日：2014-06-17
申请号：US13348231
申请日：2012-01-11
申请人： Fang-An Shu , Ted-Hong Shinn , Yao-Chou Tsai
发明人： Fang-An Shu , Ted-Hong Shinn , Yao-Chou Tsai
IPC分类号： G02B26/00
CPC分类号： G02B5/201 , B29D11/00634 , B32B37/1207 , B32B2307/412 , B32B2309/02 , B32B2309/105 , B32B2309/12 , B32B2551/00 , G02F1/133514 , G02F1/167 , G02F2001/133331 , G02F2201/50 , G02F2201/501 , G02F2202/28 , Y10T156/10
摘要： A color electronic paper device and manufacturing method thereof are provided. The device includes: a front panel; a color filter layer, placed over the front panel; a color protection layer, being a thermoplastic transparent layer placed over the color filter layer; an adhesive layer, placed over the color protection layer; and a cover, placed over the adhesive layer.
摘要翻译：提供彩色电子纸装置及其制造方法。该装置包括：前面板; 滤色器层，放置在前面板上; 彩色保护层，是放置在滤色器层上的热塑性透明层; 粘合剂层，放置在颜色保护层上; 和盖子，放置在粘合剂层上。

9. 发明授权

US08686407B2 Transparent display apparatus with transparent electroluminescent display unit 有权
标题翻译：具透明电致发光显示单元的透明显示装置
公开(公告)号：US08686407B2
公开(公告)日：2014-04-01
申请号：US13569549
申请日：2012-08-08
申请人： Fang-An Shu , Yao-Chou Tsai , Wen-Chung Tang , Ted-Hong Shinn
发明人： Fang-An Shu , Yao-Chou Tsai , Wen-Chung Tang , Ted-Hong Shinn
IPC分类号： H01L27/32
CPC分类号： H01L27/3262 , H01L27/326
摘要： A display apparatus includes a driving substrate and an organic light emitting diode device. The driving substrate includes a display area, a non-display area, a substrate and a transparent driving element. The transparent driving element is disposed in the non-display area to form a transparent region. The organic light emitting diode device is disposed over the driving substrate and located in the display area to form a non-transparent region.
摘要翻译：显示装置包括驱动基板和有机发光二极管装置。驱动基板包括显示区域，非显示区域，基板和透明驱动元件。透明驱动元件设置在非显示区域中以形成透明区域。有机发光二极管装置设置在驱动基板上并且位于显示区域中以形成不透明区域。

10. 发明申请

US20140021473A1 SEMICONDUCTOR STRUCTURE 有权
标题翻译：半导体结构
公开(公告)号：US20140021473A1
公开(公告)日：2014-01-23
申请号：US13620725
申请日：2012-09-15
申请人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
发明人： Tzung-Wei Yu , Fang-An Shu , Yao-Chou Tsai , Kuan-Yi Lin
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78609 , H01L29/78633
摘要： A semiconductor structure includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stacked layer. The oxide channel layer is stacked over the gate, with the gate insulting layer disposed therebetween. The source and the drain are disposed on a side of the oxide channel layer and in parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stacked layer is disposed on the substrate and includes plural of first inorganic dielectric layers with a first refraction index and plural of second inorganic dielectric layers with a second refraction index that are stacked alternately. At least one of the first inorganic dielectric layers directly covers the source, the drain and the portion of the oxide channel layer. The first refraction index is smaller than the second refraction index.
摘要翻译：半导体结构包括栅极，氧化物沟道层，栅极绝缘层，源极，漏极和电介质层叠层。氧化物沟道层堆叠在栅极上，栅极绝缘层位于它们之间。源极和漏极设置在氧化物沟道层的一侧并且彼此平行。氧化物通道层的一部分暴露在源极和漏极之间。电介质堆叠层设置在基板上，并且包括具有第一折射率的多个第一无机电介质层和交替堆叠的具有第二折射率的多个第二无机电介质层。第一无机电介质层中的至少一个直接覆盖源极，漏极和氧化物沟道层的部分。第一折射率小于第二折射率。

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