会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • METHOD INTEGRATING TARGET OPTIMIZATION AND OPTICAL PROXIMITY CORRECTION
    • 方法集成目标优化和光学近似校正
    • US20160291458A1
    • 2016-10-06
    • US14753192
    • 2015-06-29
    • Daquan HeFang WeiJun ZhuYukun LvXusheng Zhang
    • Daquan HeFang WeiJun ZhuYukun LvXusheng Zhang
    • G03F1/36G06F17/50
    • G03F1/36
    • A method integrating target optimization and optical proximity correction including: fragmenting sides of a target pattern in the metal layer to form a plurality of fragments; simulating the target pattern and calculating image log slope of each fragment; calculating a target pattern optimal parameter for each fragment which is a product of three parameters including the image log slope, overlap ratio of the target pattern and a via pattern in a via layer, and critical dimension; optimizing the target pattern based on the target pattern optimal parameter; preforming optical proximity correction to the optimized target pattern; determining whether the corrected target pattern meets requirements; if yes, ending the target optimization and optical proximity correction; otherwise, using the corrected target pattern as a current target pattern and iterate from the step of simulating the target pattern and calculating image log slope of each fragment.
    • 一种集成目标优化和光学邻近校正的方法,包括:金属层中的目标图案的碎裂边以形成多个碎片; 模拟目标模式并计算每个片段的图像对数斜率; 计算每个片段的目标图案最优参数,该三个参数的乘积包括图像对数斜率,目标图案的重叠率和通孔层中的通孔图案以及临界尺寸; 基于目标模式优化参数优化目标模式; 对优化的目标图案进行光学邻近校正; 确定校正的目标模式是否满足要求; 如果是,结束目标优化和光学邻近校正; 否则,使用校正的目标图案作为当前目标图案,并且从模拟目标图案的步骤并且计算每个片段的图像对数斜率来迭代。
    • 10. 发明授权
    • Method of making optical proximity correction to original gate photomask pattern based on different substrate areas
    • 基于不同衬底区域对原始门光掩模图案进行光学邻近校正的方法
    • US08434034B2
    • 2013-04-30
    • US13339411
    • 2011-12-29
    • Fang WeiChenming Zhang
    • Fang WeiChenming Zhang
    • G06F17/50
    • G03F7/70441G03F1/36
    • The present invention relates to the field of semiconductor manufacturing, and particularly to a method of making Optical Proximity Correction to an original gate photomask pattern based on different substrate areas. The present invention discloses a method of making OPC to an original gate photomask pattern based on different substrate areas, which makes correction to gate photomask pattern dimension on the AA and to gate photomask pattern dimension on the STI respectively by creating two different optical proximity effect models of the gate, so as to control the finally imaged gate photomask pattern dimensions more accurately; moreover, the error of the correction result of the gate spacing dimension on the STI can be reduced by 4% by separating the patterns and using the gate model based on the STI, so as to avoid the spacing dimension error when the photolithography exposure conditions vary.
    • 本发明涉及半导体制造领域,特别涉及一种基于不同衬底区域对原始栅光掩模图案进行光学邻近校正的方法。 本发明公开了一种基于不同衬底区域将OPC制作到原始栅光掩模图案的方法,其通过创建两个不同的光学邻近效应模型来分别校正在AA上的栅极光掩模图案尺寸和STI上的栅极光掩模图案尺寸 以便更精确地控制最终成像的门光掩模图案尺寸; 此外,通过分离图案并使用基于STI的栅极模型,STI上的栅极间隔尺寸的校正结果的误差可以减小4%,以便当光刻曝光条件变化时避免间隔尺寸误差 。