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1. 发明授权

US08629486B2 CMOS image sensor having anti-absorption layer 有权
标题翻译： CMOS图像传感器具有抗吸收层
公开(公告)号：US08629486B2
公开(公告)日：2014-01-14
申请号：US13171946
申请日：2011-06-29
申请人： Jung-chak Ahn , Eun-sub Shim , Bum-suk Kim , Kyung-ho Lee
发明人： Jung-chak Ahn , Eun-sub Shim , Bum-suk Kim , Kyung-ho Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14625 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L31/02161 , H01L31/1868 , Y02E10/50
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.
摘要翻译：包括布线层的互补金属氧化物半导体（CMOS）图像传感器，堆叠有布线层的光电二极管，堆叠在光电二极管上的微透镜，堆叠在光电二极管上的抗反射层。可以在光电二极管和抗反射层之间设置抗吸收层。光电二极管可以包括第一部分和第二部分。光可以通过微透镜聚焦在第一部分上，并且第二部分可以至少部分地围绕第一部分。第一部分的材料可以具有比第二部分的材料的折射率高的折射率。抗吸收层可以包括具有比包含在光电二极管中的半导体的能带隙大的能带隙的化合物半导体。

2. 发明授权

US08508013B2 Backside illuminated active pixel sensor array and backside illuminated image sensor including the same 有权
标题翻译：背面照明的有源像素传感器阵列和背面照明的图像传感器包括它们
公开(公告)号：US08508013B2
公开(公告)日：2013-08-13
申请号：US13252560
申请日：2011-10-04
申请人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
发明人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14687
摘要： A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.
摘要翻译：提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层，一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

3. 发明申请

US20120098078A1 BACKSIDE ILLUMINATED ACTIVE PIXEL SENSOR ARRAY, METHOD OF MANUFACTURING THE SAME, AND BACKSIDE ILLUMINATED IMAGE SENSOR INCLUDING THE SAME 有权
标题翻译：背面照明的有源像素传感器阵列，其制造方法和包括其的背面照明的图像传感器
公开(公告)号：US20120098078A1
公开(公告)日：2012-04-26
申请号：US13252560
申请日：2011-10-04
申请人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
发明人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14683 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14687
摘要： A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.
摘要翻译：提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层，一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

4. 发明申请

US20110176023A1 UNIT PICTURE ELEMENTS, BACK-SIDE ILLUMINATION CMOS IMAGE SENSORS INCLUDING THE UNIT PICTURE ELEMENTS AND METHODS OF MANUFACTURING THE UNIT PICTURE ELEMENTS 审中-公开
标题翻译：单元图像元件，背面照明CMOS图像传感器，包括单元图形元素和制造单元图形元素的方法
公开(公告)号：US20110176023A1
公开(公告)日：2011-07-21
申请号：US12984348
申请日：2011-01-04
申请人： Tae-sub Jung , Bum-suk Kim , Jung-chak Ahn , Kyung-ho Lee
发明人： Tae-sub Jung , Bum-suk Kim , Jung-chak Ahn , Kyung-ho Lee
IPC分类号： H04N5/228 , H01L31/0232 , H01L27/146 , H04N5/335
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1464 , H04N5/3745
摘要： Unit picture elements including photon-refracting microlenses. A unit picture element may include a photodiode, a metal layer, and a photo-refracting microlens. The photon-refracting microlens may be disposed between the photodiode and the metal layer. The photon-refracting microlens may refract photons reflected by the metal layer to a center portion of the photo diode.
摘要翻译：单位图像元素包括光子折射微透镜。单位像素可以包括光电二极管，金属层和光折射微透镜。光子折射微透镜可以设置在光电二极管和金属层之间。光子折射微透镜可以将由金属层反射的光子折射到光电二极管的中心部分。

5. 发明申请

US20100006968A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20100006968A1
公开(公告)日：2010-01-14
申请号：US12458011
申请日：2009-06-29
申请人： Kyung-ho Lee , Jung-chak Ahn , Yi-tae Kim , Wook Lee , Bum-suk Kim , Tae-sub Jung
发明人： Kyung-ho Lee , Jung-chak Ahn , Yi-tae Kim , Wook Lee , Bum-suk Kim , Tae-sub Jung
IPC分类号： H01L31/0232 , H01L31/0224
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/14683
摘要： Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.
摘要翻译：提供图像传感器和制造图像传感器的方法。图像传感器可以包括基板，像素阵列区域和外围电路区域。衬底包括第一区域和第二区域。像素阵列区域可以形成在第一区域上。外围电路区域可以形成在第二区域上。第一区域可以位于比第二区域更高的位置。根据图像传感器及其制造方法，与现有技术相比，像素阵列区域的垂直高度减小，因此像素阵列区域的纵横比最小化。结果，可以提高图像传感器的冷凝效率。

6. 发明申请

US20080203507A1 Image sensors for zoom lenses and fabricating methods thereof 审中-公开
标题翻译：用于变焦镜头的图像传感器及其制造方法
公开(公告)号：US20080203507A1
公开(公告)日：2008-08-28
申请号：US11892462
申请日：2007-08-23
申请人： Kyoung-sik Moon , Jong-jin Lee , Bum-suk Kim , Yun-ho Jang , Jung-chak Ahn
发明人： Kyoung-sik Moon , Jong-jin Lee , Bum-suk Kim , Yun-ho Jang , Jung-chak Ahn
IPC分类号： H01L31/0224 , H01L21/00 , H01L31/0232
CPC分类号： H01L27/14636 , H01L27/14625 , H01L27/14685
摘要： An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.
摘要翻译：图像传感器包括其上形成有多个光电二极管的半导体基板。在半导体衬底上形成多个层间电介质，并且在每个层间电介质上形成多个金属线。多层微透镜形成在最上面的层间电介质之上。通过变焦镜头的光入射到相应的微透镜上。形成在多个层间电介质中的至少一个的多个金属线具有相同的宽度。

7. 发明授权

US08563914B2 Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
标题翻译：单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置
公开(公告)号：US08563914B2
公开(公告)日：2013-10-22
申请号：US12801196
申请日：2010-05-27
申请人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
发明人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H04N5/3597 , H04N5/363 , H04N5/37452
摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
摘要翻译：能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器，端子，施加升压电压。

8. 发明授权

US08885065B2 Light leakage compensating unit image sensors, image sensor arrays including the unit image sensors, and methods for compensating for light leakage of the image sensor arrays 有权
标题翻译：漏光补偿单元图像传感器，包括单元图像传感器的图像传感器阵列以及补偿图像传感器阵列的漏光的方法
公开(公告)号：US08885065B2
公开(公告)日：2014-11-11
申请号：US13151794
申请日：2011-06-02
申请人： Kyung-ho Lee , Jung-chak Ahn , Sang-joo Lee , Young-hwan Park , Dong-yoon Jang , Young-heub Jang
发明人： Kyung-ho Lee , Jung-chak Ahn , Sang-joo Lee , Young-hwan Park , Dong-yoon Jang , Young-heub Jang
IPC分类号： H04N5/76 , H04N5/361 , H04N5/359
CPC分类号： H04N5/361 , H04N5/359 , H04N5/3594
摘要： A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.
摘要翻译：背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。

9. 发明申请

US20080179642A1 CMOS image sensor with pocket photodiode for minimizng image lag 失效
标题翻译：具有袖珍光电二极管的CMOS图像传感器，用于最小化图像滞后
公开(公告)号：US20080179642A1
公开(公告)日：2008-07-31
申请号：US11983913
申请日：2007-11-13
申请人： Kyung-ho Lee , Yi-tae Kim , Jung-chak Ahn , Sae-young Kim
发明人： Kyung-ho Lee , Yi-tae Kim , Jung-chak Ahn , Sae-young Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689 , H01L31/035281
摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.
摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。浮动扩散区域是第二导电类型。转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

10. 发明申请

US20110036969A1 Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays 有权
标题翻译：单位像素包括升压电容器，包括单位像素的像素阵列和包括像素阵列的光检测装置
公开(公告)号：US20110036969A1
公开(公告)日：2011-02-17
申请号：US12801196
申请日：2010-05-27
申请人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
发明人： Jung-chak Ahn , Kyung-ho Lee , Shay Hamami , Young-hwan Park
IPC分类号： H01L27/146 , H01L31/09
CPC分类号： H01L27/14609 , H04N5/3597 , H04N5/363 , H04N5/37452
摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
摘要翻译：能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器，端子，施加升压电压。

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