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1. 发明授权

US09673258B2 Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same 有权
公开(公告)号：US09673258B2
公开(公告)日：2017-06-06
申请号：US14466395
申请日：2014-08-22
申请人： Kyo Jin Choo , Hirosige Goto , Kyu Sik Kim , Yun Kyung Kim , Kyung Bae Park , Jin Ho Seo , Sang Chul Sul , Kyung Ho Lee , Kwang-hee Lee
发明人： Kyo Jin Choo , Hirosige Goto , Kyu Sik Kim , Yun Kyung Kim , Kyung Bae Park , Jin Ho Seo , Sang Chul Sul , Kyung Ho Lee , Kwang-hee Lee
IPC分类号： H04N3/14 , H01L27/30 , H04N5/378 , H01L51/42 , H04N5/369 , H04N5/335 , H04N5/3745
CPC分类号： H01L27/307 , H01L51/424 , H04N5/3698 , H04N5/37452 , H04N5/378
摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

2. 发明授权

US08885065B2 Light leakage compensating unit image sensors, image sensor arrays including the unit image sensors, and methods for compensating for light leakage of the image sensor arrays 有权
标题翻译：漏光补偿单元图像传感器，包括单元图像传感器的图像传感器阵列以及补偿图像传感器阵列的漏光的方法
公开(公告)号：US08885065B2
公开(公告)日：2014-11-11
申请号：US13151794
申请日：2011-06-02
申请人： Kyung-ho Lee , Jung-chak Ahn , Sang-joo Lee , Young-hwan Park , Dong-yoon Jang , Young-heub Jang
发明人： Kyung-ho Lee , Jung-chak Ahn , Sang-joo Lee , Young-hwan Park , Dong-yoon Jang , Young-heub Jang
IPC分类号： H04N5/76 , H04N5/361 , H04N5/359
CPC分类号： H04N5/361 , H04N5/359 , H04N5/3594
摘要： A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.
摘要翻译：背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。

3. 发明授权

US08853705B2 Image sensor including guard ring and noise blocking area to block noise and method of manufacturing the same 有权
标题翻译：图像传感器包括保护环和噪声阻挡区域以阻止噪声及其制造方法
公开(公告)号：US08853705B2
公开(公告)日：2014-10-07
申请号：US13286786
申请日：2011-11-01
申请人： Kyung Ho Lee , Jung Chak Ahn
发明人： Kyung Ho Lee , Jung Chak Ahn
IPC分类号： H01L29/00 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14632 , H01L27/14687
摘要： An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.
摘要翻译：包括深保护环和噪声阻挡区域的图像传感器及其制造方法。图像传感器包括深保护环和围绕噪声阻挡区域的深P阱，从而防止相邻像素之间的串扰。此外，离子注入层被噪声阻挡区域分割，从而有效地消除了衬底串扰。

4. 发明申请

US20140021542A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20140021542A1
公开(公告)日：2014-01-23
申请号：US13957103
申请日：2013-08-01
申请人： Jae-Han CHA , Kyung-Ho LEE , Sun-Goo KIM , Hyung-Suk CHOI , Ju-Ho KIM , Jin-Young Chae , In-Taek OH
发明人： Jae-Han CHA , Kyung-Ho LEE , Sun-Goo KIM , Hyung-Suk CHOI , Ju-Ho KIM , Jin-Young Chae , In-Taek OH
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/42368 , H01L29/66681
摘要： A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

5. 发明授权

US08546883B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08546883B2
公开(公告)日：2013-10-01
申请号：US12835523
申请日：2010-07-13
申请人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
发明人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
IPC分类号： H01L29/66
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/42368 , H01L29/66681
摘要： A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.
摘要翻译：半导体器件包括在衬底上方构造的第二导电类型深阱。深阱包括离子注入区域和扩散区域。在扩散区域中形成第一导电型第一阱。栅电极延伸在离子注入区域和扩散区域的部分上，并且部分地与第一阱重叠。离子注入区域具有均匀的杂质浓度，而扩散区域的杂质浓度从在离子注入区域和扩散区域之间的边界界面处的最高浓度变为在扩散区域的部分处的最低浓度距离边界界面最远。

6. 发明授权

US08546881B2 Semiconductor device 有权
公开(公告)号：US08546881B2
公开(公告)日：2013-10-01
申请号：US12875021
申请日：2010-09-02
申请人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
发明人： Jae-Han Cha , Kyung-Ho Lee , Sun-Goo Kim , Hyung-Suk Choi , Ju-Ho Kim , Jin-Young Chae , In-Taek Oh
IPC分类号： H01L29/66
CPC分类号： H01L29/7835 , H01L29/0653 , H01L29/0847 , H01L29/0878 , H01L29/1045 , H01L29/1095 , H01L29/42368 , H01L29/7816
摘要： A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.

7. 发明授权

US08508013B2 Backside illuminated active pixel sensor array and backside illuminated image sensor including the same 有权
标题翻译：背面照明的有源像素传感器阵列和背面照明的图像传感器包括它们
公开(公告)号：US08508013B2
公开(公告)日：2013-08-13
申请号：US13252560
申请日：2011-10-04
申请人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
发明人： Eun-sub Shim , Jung-chak Ahn , Bum-suk Kim , Kyung-ho Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14687
摘要： A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.
摘要翻译：提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层，一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

8. 发明授权

US08422115B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08422115B2
公开(公告)日：2013-04-16
申请号：US12197433
申请日：2008-08-25
申请人： Jae-Hyuk Chang , Seong-Sik Shin , Nam-Seok Roh , Kyung-Ho Lee , Jun-Bo Yoon
发明人： Jae-Hyuk Chang , Seong-Sik Shin , Nam-Seok Roh , Kyung-Ho Lee , Jun-Bo Yoon
IPC分类号： G02B26/00
CPC分类号： G09G3/3433 , G02B26/02 , G09G3/2011 , G09G3/2074 , G09G3/2077
摘要： A display device is provided. The display device includes: a substrate including a unit display area, a fixing member that is formed on the substrate and that is electrically isolated, an insulating layer that is formed on the fixing member, a fixing electrode that is formed on the insulating layer and that is electrically connected to a power source, and a plurality of moving members with one end fixed to the insulating layer and positioned apart by a distance from the fixing electrode. The plurality of moving members and the fixing electrode are positioned within the unit display area.
摘要翻译：提供显示装置。显示装置包括：基板，包括单元显示区域，形成在基板上并且被电隔离的固定部件，形成在固定部件上的绝缘层，形成在绝缘层上的固定电极和电连接到电源，以及多个移动构件，其一端固定到绝缘层并且与固定电极分开一定距离。多个移动构件和固定电极位于单元显示区域内。

9. 发明授权

US08288899B2 Horizontal linear vibrator 有权
标题翻译：水平线性振动器
公开(公告)号：US08288899B2
公开(公告)日：2012-10-16
申请号：US12926568
申请日：2010-11-24
申请人： Seok Jun Park , Jun Kun Choi , Hwa Young Oh , Jee Sung Lee , Yong Jin Kim , Kyung Ho Lee
发明人： Seok Jun Park , Jun Kun Choi , Hwa Young Oh , Jee Sung Lee , Yong Jin Kim , Kyung Ho Lee
IPC分类号： H02K33/00
CPC分类号： H02K33/16
摘要： There is provided a horizontal linear vibrator including a bracket providing an internal space; a vibration unit mounted in the internal space and including a mass body moving horizontally and linearly; and a magnetic field unit including a magnet fixed to the mass body and a coil installed within a magnetic field of the magnet and generating electromagnetic force to allow the vibration unit to move horizontally and linearly, wherein the coil includes a coil line disposed between the bracket and a printed circuit board and extending outside of the internal space of the bracket such that the coil line is connected with the printed circuit board for applying power from an external source to the coil outside of the internal space of the bracket.
摘要翻译：提供了一种包括提供内部空间的支架的水平线性振动器; 振动单元，其安装在所述内部空间中并且包括沿水平和线性运动的质量体; 以及磁场单元，其包括固定到所述质量体的磁体和安装在所述磁体的磁场内的线圈，并且产生电磁力以允许所述振动单元水平和线性移动，其中所述线圈包括设置在所述支架之间的线圈线以及印刷电路板，并且延伸到支架的内部空间的外侧，使得线圈线与印刷电路板连接，用于将电力从外部源施加到支架内部空间的线圈。

10. 发明授权

US08278786B2 Linear vibrator with an increased driving force 有权
标题翻译：线性振动器具有增加的驱动力
公开(公告)号：US08278786B2
公开(公告)日：2012-10-02
申请号：US12752669
申请日：2010-04-01
申请人： Ki-Suk Woo , Kyung-Ho Lee , Jun-Kun Choi , Yong-Jin Kim , Hwa-Young Oh , Je-Hyun Bang , Young-Bok Yoon , Suck-Jun Park , Kwang-Hyung Lee
发明人： Ki-Suk Woo , Kyung-Ho Lee , Jun-Kun Choi , Yong-Jin Kim , Hwa-Young Oh , Je-Hyun Bang , Young-Bok Yoon , Suck-Jun Park , Kwang-Hyung Lee
IPC分类号： H02K33/00
CPC分类号： H02K33/16
摘要： A linear vibrator is disclosed. The linear vibrator in accordance with an embodiment of the present invention includes a base, a coil unit, which is coupled to the base, a magnet assembly, which forms a closed circuit of a magnetic force perpendicular to an electric current flowing through the coil unit and in which the magnet assembly relatively moves with respect to the coil unit, and an elastic member, which elastically supports the magnet assembly. Thus, a linear vibrator with an increased driving force can be provided by preventing the leakage of magnetic flux.
摘要翻译：公开了线性振动器。根据本发明的实施例的线性振动器包括基座，耦合到基座的线圈单元，磁体组件，其形成与流过线圈单元的电流垂直的磁力的闭合电路并且其中磁体组件相对于线圈单元相对移动，以及弹性构件，其弹性地支撑磁体组件。因此，可以通过防止磁通量的泄漏来提供具有增加的驱动力的线性振动器。

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