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1. 发明授权

US07433379B2 Vertical-cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US07433379B2
公开(公告)日：2008-10-07
申请号：US11584987
申请日：2006-10-23
申请人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
发明人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , G02B6/4214 , H01S5/0071 , H01S5/026 , H01S5/0425 , H01S5/18341 , H01S5/2213 , H01S2301/176
摘要： A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light, an upper electrode grown on the active layer and a lower electrode formed on the first mirror for supplying current to the active layer, a planarizing polymer formed on the first mirror for burying the active layer and the second layer, and a first external terminal extending from the upper electrode in a vertical upward direction to be exposed to the top surface of the planarizing polymer and a second external terminal extending from the lower electrode to expose its one surface to the top surface of the planarizing polymer.
摘要翻译：垂直腔表面发射激光器包括衬底和在衬底上生长的第一反射镜，在第一反射镜上生长以谐振第一反射镜和光的第二反射镜，在第一反射镜和第二反射镜之间的有源层，用于产生并且放大光，在有源层上生长的上电极和形成在第一反射镜上用于向有源层供电的下电极，形成在第一反射镜上用于掩埋有源层和第二层的平坦化聚合物，以及第一外部端子从上部电极沿垂直向上的方向延伸以暴露于平坦化聚合物的顶表面;以及第二外部端子，其从下部电极延伸以将其一个表面暴露于平坦化聚合物的顶表面。

2. 发明申请

US20070183472A1 Vertical-cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20070183472A1
公开(公告)日：2007-08-09
申请号：US11584987
申请日：2006-10-23
申请人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
发明人： Eun-Hwa Lee , Young-Hyun Kim , In Kim , Yu-Dong Bae
IPC分类号： H01S5/00
CPC分类号： H01S5/18369 , G02B6/4214 , H01S5/0071 , H01S5/026 , H01S5/0425 , H01S5/18341 , H01S5/2213 , H01S2301/176
摘要： A vertical-cavity surface emitting laser includes a substrate and a first mirror that is grown on the substrate, a second mirror grown on the first mirror for resonating the first mirror and light, an active layer between the first mirror and the second mirror for generating and amplifying the light, an upper electrode grown on the active layer and a lower electrode formed on the first mirror for supplying current to the active layer, a planarizing polymer formed on the first mirror for burying the active layer and the second layer, and a first external terminal extending from the upper electrode in a vertical upward direction to be exposed to the top surface of the planarizing polymer and a second external terminal extending from the lower electrode to expose its one surface to the top surface of the planarizing polymer.
摘要翻译：垂直腔表面发射激光器包括衬底和在衬底上生长的第一反射镜，在第一反射镜上生长以谐振第一反射镜和光的第二反射镜，在第一反射镜和第二反射镜之间的有源层，用于产生并且放大光，在有源层上生长的上电极和形成在第一反射镜上用于向有源层供电的下电极，形成在第一反射镜上用于掩埋有源层和第二层的平坦化聚合物，以及第一外部端子从上部电极沿垂直向上的方向延伸以暴露于平坦化聚合物的顶表面;以及第二外部端子，其从下部电极延伸以将其一个表面暴露于平坦化聚合物的顶表面。

3. 发明申请

US20070153858A1 Optical spot size converter integrated laser device and method for manufacturing the same 审中-公开
标题翻译：光点尺寸转换器集成激光器件及其制造方法
公开(公告)号：US20070153858A1
公开(公告)日：2007-07-05
申请号：US11523513
申请日：2006-09-19
申请人： Young-Hyun Kim , In Kim , Eun-Hwa Lee , Yu-Dong Bae
发明人： Young-Hyun Kim , In Kim , Eun-Hwa Lee , Yu-Dong Bae
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , B82Y20/00 , G02B6/12004 , G02B6/1228 , G02B6/305 , H01S5/1014 , H01S5/12 , H01S5/2206 , H01S5/2275 , H01S5/34306 , H01S2301/185
摘要： An optical spot size converter integrated laser device includes a substrate; a first waveguide laminated on the substrate and optically coupled to an optical fiber, the first waveguide being divided into a light source region having an active waveguide and an optical spot size converter region, and a trench formed on both lateral walls of the first waveguide on the substrate so that light emitted from the active waveguide interferes with light reflected by a wall surface of the first waveguide inside the first waveguide. By means of mutual interference between light emitted directly from the active waveguide of the laser device and light reflected by the interference waveguide, the optical spot size of a laser can be adjusted without affecting the single mode of the laser.
摘要翻译：一种光点尺寸转换器集成激光装置，包括：基板; 层叠在所述基板上并光耦合到光纤的第一波导，所述第一波导被分成具有有源波导和光点尺寸转换器区域的光源区域，以及形成在所述第一波导的两个侧壁上的沟槽，使得从有源波导发射的光干扰由第一波导内的第一波导的壁表面反射的光。通过直接从激光装置的有源波导发射的光与由干涉波导反射的光之间的相互干扰，可以调节激光的光点尺寸而不影响激光的单模。

4. 发明授权

US07361286B2 Method of detecting etching end-point 失效
标题翻译：腐蚀终点检测方法
公开(公告)号：US07361286B2
公开(公告)日：2008-04-22
申请号：US11222136
申请日：2005-09-08
申请人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
发明人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
IPC分类号： G01L21/50 , G01R31/00
CPC分类号： H01L22/34 , H01L22/20
摘要： A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mask; and evaluating the size of a remaining object covered by the mask using the etching indicator.
摘要翻译：检测蚀刻端点的方法包括以下步骤：在蚀刻对象的图案区域上形成掩模; 在蚀刻对象的蚀刻区域上形成蚀刻指示器，其不被掩模覆盖; 使用掩模蚀刻蚀刻对象; 以及使用蚀刻指示器评估由掩模覆盖的剩余物体的尺寸。

5. 发明授权

US07501327B2 Fabricating method of semiconductor optical device for flip-chip bonding 有权
标题翻译：用于倒装芯片接合的半导体光学器件的制造方法
公开(公告)号：US07501327B2
公开(公告)日：2009-03-10
申请号：US11217015
申请日：2005-08-31
申请人： Young-Hyun Kim , In Kim , Yu-Dong Bae , Young-Churl Bang
发明人： Young-Hyun Kim , In Kim , Yu-Dong Bae , Young-Churl Bang
IPC分类号： H01L21/76
CPC分类号： H01S5/227 , H01S5/0224 , Y10S438/975
摘要： Disclosed is a method for manufacturing a semiconductor optical device for flip-chip bonding. The method includes the steps of: etching an active layer and clad which are sequentially stacked on a semiconductor substrate into first and second alignment keys and an optical area, which has a mesa structure; growing at least two insulating layers at mesa-etched portions between the first and second alignment keys and the optical areas; and forming protection masks on the first and second alignment keys, growing an electrode on the optical area and the insulating layer except for the protection masks, and removing the protection masks.
摘要翻译：公开了一种用于制造用于倒装芯片接合的半导体光学器件的方法。该方法包括以下步骤：将依次层叠在半导体基板上的有源层和包层蚀刻成第一和第二对准键和具有台面结构的光学区域; 在第一和第二对准键和光学区域之间的台面蚀刻部分处生长至少两个绝缘层; 以及在所述第一和第二对准键上形成保护掩模，在所述光学区域上生长电极和除了所述保护掩模之外的绝缘层，以及去除所述保护掩模。

6. 发明申请

US20050259708A1 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US20050259708A1
公开(公告)日：2005-11-24
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01S5/042 , G02B6/12 , H01S3/08 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

7. 发明授权

US07127134B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07127134B2
公开(公告)日：2006-10-24
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/12 , G02B6/10 , G02B6/42 , H01S5/00 , H01L27/15
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

8. 发明申请

US20050129368A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20050129368A1
公开(公告)日：2005-06-16
申请号：US10864058
申请日：2004-06-09
申请人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
发明人： Byung-Kwon Kang , In Kim , Yu-Dong Bae , Byeong-Hoon Park , Sang-Moon Lee , Young-Hyun Kim
IPC分类号： G02B6/122 , G02B6/26 , H01L31/12 , H01S5/026 , G02B6/42
CPC分类号： G02B6/26 , H01S5/0264
摘要： A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
摘要翻译：公开了一种单片集成半导体光学元件。所述半导体光学元件包括基板，形成在所述基板上的第一波导，所述基板包括用于产生光的第一有源层和半绝缘层，所述第一有源层在所述基板上生长以包围所述第一波导层的周边，窗口区域，用于扩散从第一波导输出的光并输出漫射光。半导体光学元件还包括形成在靠近第一波导的窗口区域中的至少一个第二波导，包括用于检测由窗口区域扩散的光的一部分的第二有源层。

9. 发明授权

US07288422B2 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US07288422B2
公开(公告)日：2007-10-30
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

10. 发明申请

US20060105539A1 Method of detecting etching end-point 失效
标题翻译：腐蚀终点检测方法
公开(公告)号：US20060105539A1
公开(公告)日：2006-05-18
申请号：US11222136
申请日：2005-09-08
申请人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
发明人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
IPC分类号： H01L21/76
CPC分类号： H01L22/34 , H01L22/20
摘要： A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mask; and evaluating the size of a remaining object covered by the mask using the etching indicator.
摘要翻译：检测蚀刻端点的方法包括以下步骤：在蚀刻对象的图案区域上形成掩模; 在蚀刻对象的蚀刻区域上形成蚀刻指示器，其不被掩模覆盖; 使用掩模蚀刻蚀刻对象; 以及使用蚀刻指示器评估由掩模覆盖的剩余物体的尺寸。

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