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1. 发明申请

US20050207463A1 Semiconductor laser diode and optical module 有权
标题翻译：半导体激光二极管和光模块
公开(公告)号：US20050207463A1
公开(公告)日：2005-09-22
申请号：US11130150
申请日：2005-05-17
申请人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
发明人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
IPC分类号： H01S5/042 , H01S5/16 , H01S5/22 , H01S5/32 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/3201
摘要： The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.
摘要翻译：本发明提供了一种高度可靠的脊 - 波导半导体激光二极管和光学模块。脊波导激光二极管的p侧电极具有形成在第一导体层区域上的第一导体层区域和第二导体层区域。第二导体层区域的至少一个面从反射面向内凹入。因此，脊 - 波导半导体激光二极管具有这样的结构，其中由施加在二极管面上的电极应力引起的应变减小，并且不发生饱和吸收。由此获得的脊 - 波导半导体激光二极管是可靠的，并且使用它的光学模块的可靠性非常高。

2. 发明授权

US06985505B2 Semiconductor laser diode and optical module 有权
公开(公告)号：US06985505B2
公开(公告)日：2006-01-10
申请号：US11130150
申请日：2005-05-17
申请人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
发明人： Etsuko Nomoto , Kouji Nakahara , Shinji Tsuji , Makoto Shimaoka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/3201
摘要： The present invention provides a highly reliable ridge-waveguide semiconductor laser diode and an optical module. The p-side electrode of the ridge-waveguide laser diode has a first conductor layer region and a second conductor layer region formed on the first conductor layer region. At least one of facets of the second conductor layer region is recessed inward from a reflection facet. Thus, the ridge-waveguide semiconductor laser diode has a structure in which strain which is caused by the electrode stress to be applied on the diode facet is reduced and the saturable absorption does not occur. The ridge-waveguide semiconductor laser diode thus obtained is highly reliable, and the optical module using the same is remarkably high in reliability.

3. 发明申请

US20110096383A1 LIGHT BEAM SCANNING IMAGE PROJECTION APPARATUS 有权
标题翻译：光束扫描图像投影设备
公开(公告)号：US20110096383A1
公开(公告)日：2011-04-28
申请号：US12999392
申请日：2009-06-11
申请人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
发明人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
IPC分类号： G02B26/10
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译：本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。以下光束扫描图像投影装置是实现该目的的一种手段。在包括发射分别不同波长的光束的多个光源的光束扫描图像投影装置中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与中心参考点以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴每个光束。

4. 发明授权

US08569727B2 Light beam scanning image projection apparatus 有权
标题翻译：光束扫描图像投影装置
公开(公告)号：US08569727B2
公开(公告)日：2013-10-29
申请号：US12999392
申请日：2009-06-11
申请人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
发明人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
IPC分类号： G01V8/00
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译：本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。以下光束扫描图像投影装置是实现该目的的一种手段。在包括发射分别不同波长的光束的多个光源的光束扫描图像投影设备中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与中心参考点以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴每个光束。

5. 发明申请

US20050127383A1 Laser diode and manufacturing method thereof 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20050127383A1
公开(公告)日：2005-06-16
申请号：US10772294
申请日：2004-02-06
申请人： Takeshi Kikawa , Kouji Nakahara , Etsuko Nomoto
发明人： Takeshi Kikawa , Kouji Nakahara , Etsuko Nomoto
IPC分类号： B82Y20/00 , H01L21/00 , H01S5/028 , H01S5/0683 , H01S5/10 , H01S5/12 , H01S5/223 , H01S5/227 , H01L33/00
CPC分类号： H01S5/0282 , H01L2224/45144 , H01L2224/48091 , H01S5/0014 , H01S5/02216 , H01S5/02284 , H01S5/0683 , H01S5/1039 , H01S5/12 , H01S5/2231 , H01S5/227 , H01L2924/00014 , H01L2924/00
摘要： Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
摘要翻译：在激活层中含有高浓度的铝的激光二极管通常伴随着激光驱动操作而引起显着的面恶化，并且激光二极管难以获得高可靠性。在光谐振器面上与半导体相邻形成缺氧的氧化铝膜，由此可以使面畸变最小化，因此激光二极管长时间可以在高温下没有小面恶化的情况下工作，而激光二极管可以以较低的成本制造高可靠性。

6. 发明授权

US06990133B2 Laser diode and manufacturing method thereof 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US06990133B2
公开(公告)日：2006-01-24
申请号：US10772294
申请日：2004-02-06
申请人： Takeshi Kikawa , Kouji Nakahara , Etsuko Nomoto
发明人： Takeshi Kikawa , Kouji Nakahara , Etsuko Nomoto
IPC分类号： H01S5/00
CPC分类号： H01S5/0282 , H01L2224/45144 , H01L2224/48091 , H01S5/0014 , H01S5/02216 , H01S5/02284 , H01S5/0683 , H01S5/1039 , H01S5/12 , H01S5/2231 , H01S5/227 , H01L2924/00014 , H01L2924/00
摘要： Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.
摘要翻译：在激活层中含有高浓度的铝的激光二极管通常伴随着激光驱动操作而引起显着的面恶化，并且激光二极管难以获得高可靠性。在光谐振器面上与半导体相邻形成缺氧的氧化铝膜，由此可以使面畸变最小化，并且因此激光二极管可以长时间在高温下没有小面恶化的情况下工作，而激光二极管可以以较低的成本制造高可靠性。

7. 发明申请

US20140355636A1 SEMICONDUCTOR OPTICAL ELEMENT 有权
标题翻译：半导体光学元件
公开(公告)号：US20140355636A1
公开(公告)日：2014-12-04
申请号：US14364074
申请日：2011-12-12
申请人： Tadashi Okumura , Shinichi Saito , Kazuki Tani , Etsuko Nomoto , Katsuya Oda
发明人： Tadashi Okumura , Shinichi Saito , Kazuki Tani , Etsuko Nomoto , Katsuya Oda
IPC分类号： H01S5/32 , H01L31/0352 , H01L31/028
CPC分类号： H01L33/34 , H01L31/035272 , H01L31/103 , H01L33/44 , H01S5/021 , H01S5/2214 , H01S5/3211 , H01S5/3219 , H01S5/3223 , H01L2924/01032 , H01L2924/10252
摘要： In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.
摘要翻译：为了提供高发光效率或低功耗的高可靠性硅锗半导体光学元件，可以减少或防止在发光层或光吸收层与包层之间的界面上发生位错或晶体缺陷在硅锗半导体光学元件中，在锗发光层或光吸收层10和设置在基板上方的包覆层12之间设置非发光锗保护层11。锗保护层11具有与锗发光层或光吸收层10的电导率不同的导电性。

8. 发明授权

US09287456B2 Silicon-germanium light-emitting element 有权
标题翻译：硅 - 锗发光元件
公开(公告)号：US09287456B2
公开(公告)日：2016-03-15
申请号：US14127837
申请日：2012-06-12
申请人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
发明人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
IPC分类号： H01L33/06 , H01L33/34 , H01L33/36 , H01L33/00 , H01S5/32 , H01L33/20 , H01S5/042 , H01S5/10
CPC分类号： H01L33/36 , H01L33/0054 , H01L33/06 , H01L33/20 , H01L33/34 , H01S5/0424 , H01S5/1032 , H01S5/3224
摘要： Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.
摘要翻译：提供了一种元件结构，由此可以在发光区域内产生包围注入载体的硅锗发光元件。还提供了一种制造该结构的方法。在发光区域和电极之间，为载体产生窄通道，具体地说，是一维或二维量子限制区域。由于量子限制，在该部分中带隙打开，由此形成电子和空穴的能量势垒，并且提供类似于普通III-V族半导体激光器中的双异质结构的效果。由于不使用在普通硅工艺中使用的化学元素以外的化学元素，所以可以通过简单地控制元件的形状来廉价地制造元件。

9. 发明授权

US07542498B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07542498B2
公开(公告)日：2009-06-02
申请号：US11195792
申请日：2005-08-03
申请人： Etsuko Nomoto , Tsukuru Ohtoshi
发明人： Etsuko Nomoto , Tsukuru Ohtoshi
IPC分类号： H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.
摘要翻译：一种半导体激光器件，其能够以高功率工作，并且具有能够同时抑制扭结，减少损耗和稳定偏振方向的结构，并且其中光学图案随着从有源层退出而单调减小，并且晶体组成可以易于控制。引入组成不同于包覆层的多个高折射率层，其分散在比用于引导光更靠近半导体激光器的下包层并稳定偏振方向的光斑尺寸的范围内。随着从光学图案的有源层退出，电场强度单调减小。

10. 发明申请

US20140175490A1 SILICON-GERMANIUM LIGHT-EMITTING ELEMENT 有权
标题翻译：硅锗发光元件
公开(公告)号：US20140175490A1
公开(公告)日：2014-06-26
申请号：US14127837
申请日：2012-06-12
申请人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
发明人： Yuji Suwa , Shinichi Saito , Etsuko Nomoto , Makoto Takahashi
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L33/0054 , H01L33/06 , H01L33/20 , H01L33/34 , H01S5/0424 , H01S5/1032 , H01S5/3224
摘要： Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.
摘要翻译：提供了一种元件结构，由此可以在发光区域内产生包围注入载体的硅锗发光元件。还提供了一种制造该结构的方法。在发光区域和电极之间，为载体产生窄通道，具体地说，是一维或二维量子限制区域。由于量子限制，在该部分中带隙打开，由此形成电子和空穴的能量势垒，并且提供类似于普通III-V族半导体激光器中的双异质结构的效果。由于不使用在普通硅工艺中使用的化学元素以外的化学元素，所以可以通过简单地控制元件的形状来廉价地制造元件。

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