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1. 发明申请

US20110096383A1 LIGHT BEAM SCANNING IMAGE PROJECTION APPARATUS 有权
标题翻译：光束扫描图像投影设备
公开(公告)号：US20110096383A1
公开(公告)日：2011-04-28
申请号：US12999392
申请日：2009-06-11
申请人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
发明人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
IPC分类号： G02B26/10
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译：本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。以下光束扫描图像投影装置是实现该目的的一种手段。在包括发射分别不同波长的光束的多个光源的光束扫描图像投影装置中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与中心参考点以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴每个光束。

2. 发明授权

US08569727B2 Light beam scanning image projection apparatus 有权
标题翻译：光束扫描图像投影装置
公开(公告)号：US08569727B2
公开(公告)日：2013-10-29
申请号：US12999392
申请日：2009-06-11
申请人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
发明人： Etsuko Nomoto , Shigehisa Tanaka , Hitoshi Nakamura , Toshiki Sugawara , Kouji Nakahara
IPC分类号： G01V8/00
CPC分类号： H04N9/317 , G02B26/10 , H04N9/3129
摘要： The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam.
摘要翻译：本申请中包括的本发明的目的是即使当由于更换光源等而导致投影图像的图像质量劣化时，也能够自动防止图像的劣化。以下光束扫描图像投影装置是实现该目的的一种手段。在包括发射分别不同波长的光束的多个光源的光束扫描图像投影设备中，根据图像信号调制每个光束的强度的驱动部分，将对准该光束的光轴对准装置每个光束的光轴和扫描光束的扫描装置，光轴对准装置包括：多个光学元件; 以及调整部，其调整至少一个所述光学元件的位置和倾斜度中的至少一个，并且所述光束扫描图像投影装置还包括：检测装置，其检测每个光束的光点中心与中心参考点以及位置校正装置，其基于检测装置中的检测结果来控制调节部分，以调整光轴对准装置的至少一个光学元件的位置和梯度中的至少一个，从而使光轴对准装置的光轴每个光束。

3. 发明申请

US20070051939A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20070051939A1
公开(公告)日：2007-03-08
申请号：US11210760
申请日：2005-08-25
申请人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
发明人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
IPC分类号： H01L31/00
CPC分类号： H01S5/34313 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , H01S5/0265 , H01S5/0287 , H01S5/12 , H01S5/1221 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/34306 , H01S5/34366 , Y10S438/962
摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently. This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
摘要翻译：在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。

4. 发明授权

US08124432B2 Nitride semiconductor optical element and manufacturing method thereof 有权
标题翻译：氮化物半导体光学元件及其制造方法
公开(公告)号：US08124432B2
公开(公告)日：2012-02-28
申请号：US12630008
申请日：2009-12-03
申请人： Tomonobu Tsuchiya , Shigehisa Tanaka , Akihisa Terano , Kouji Nakahara
发明人： Tomonobu Tsuchiya , Shigehisa Tanaka , Akihisa Terano , Kouji Nakahara
IPC分类号： H01L21/205 , H01L31/18 , H01S5/22 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/2009 , H01S5/3213 , H01S5/3215 , H01S5/3407
摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
摘要翻译：在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。在制造具有包括InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN基氮化物半导体光学器件中，生长InGaN势垒层的步骤包括：第一步骤，在1 ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。

5. 发明授权

US07223993B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US07223993B2
公开(公告)日：2007-05-29
申请号：US11210760
申请日：2005-08-25
申请人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
发明人： Kouji Nakahara , Makoto Kudo , Shigehisa Tanaka , Masataka Shirai
IPC分类号： H01L29/06
CPC分类号： H01S5/34313 , B82Y20/00 , G02F1/01708 , G02F2001/01766 , H01S5/0265 , H01S5/0287 , H01S5/12 , H01S5/1221 , H01S5/227 , H01S5/305 , H01S5/3054 , H01S5/3406 , H01S5/34306 , H01S5/34366 , Y10S438/962
摘要： In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently.This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer 3, an MQW layer 4, a p-type InGaAlAs-GRIN-SCH layer 5, a p-type InAlAs electron-stopping layer 6, and others, in that order, on an n-type InP wafer 1; wherein the MQW layer 4 includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.
摘要翻译：在包括应变量子阱层作为有源层的半导体激光器或电吸收光学调制器中，由于带结构，特别是DeltaEc和DeltaEv已经不能独立地调整，所以使激光特性或调制器特性足够的已经看到相应的限制。本发明通过将n型InGaAlAs-GRIN-SCH层3，MQW层4，p型InGaAlAs-GRIN-SCH层5，p型InAlAs电子停止层6等层叠而构成在n型InP晶片1上的顺序; 其中MQW层4包括InGaAlAs应变的量子阱层和InGaAlAsSb形成的阻挡层，每个具有与施加到量子阱层的应变相反的符号的应变。

6. 发明申请

US20080049803A1 Semiconductor laser diode device 失效
标题翻译：半导体激光二极管器件
公开(公告)号：US20080049803A1
公开(公告)日：2008-02-28
申请号：US11882055
申请日：2007-07-30
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
IPC分类号： H01S5/347
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/22 , H01S5/3213 , H01S5/3216 , H01S5/347 , H01S2301/173 , H01S2304/02
摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.
摘要翻译：本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

7. 发明申请

US20090141763A1 SEMICONDUCTOR LASER 审中-公开
标题翻译：半导体激光器
公开(公告)号：US20090141763A1
公开(公告)日：2009-06-04
申请号：US12038055
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Sumiko Fujisaki , Hitoshi Nakamura , Takeshi Kikawa , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Sumiko Fujisaki , Hitoshi Nakamura , Takeshi Kikawa , Shigehisa Tanaka
IPC分类号： H01S5/20
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02477 , H01L21/02505 , H01L21/02562 , H01L21/02568 , H01L21/02631 , H01S5/0218 , H01S2301/173 , H01S2304/02
摘要： There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including Be. An active layer and cladding layers are formed to be a double heterostructure with a type I band lineup, in order to increase the efficiency for injecting carriers into the active layer. The active layer and the cladding layers are also formed to enhance the light confinement to the active layer, in which the Mg composition of the p-type cladding layer is set to Mg
摘要翻译：公开了一种含有II-VI族半导体激光器，其具有形成在InP衬底上的层压结构，以在室温下连续发射而没有晶体降解。通过使用包括Be的晶格匹配的II-VI族半导体，在InP衬底上形成半导体激光器的基本结构。形成有源层和包覆层是具有I型带阵列的双异质结构，以提高将载流子注入有源层的效率。还形成有源层和包层，以增强对p型包覆层的Mg组成设定为Mg <0.2的有源层的光限制。

8. 发明授权

US07738521B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07738521B2
公开(公告)日：2010-06-15
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译：超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻高。

9. 发明申请

US20070121693A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20070121693A1
公开(公告)日：2007-05-31
申请号：US11606186
申请日：2006-11-30
申请人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
发明人： Shin'ichi Nakatsuka , Tsukuru Ohtoshi , Kazunori Shinoda , Akihisa Terano , Hitoshi Nakamura , Shigehisa Tanaka
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/221 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S5/34333
摘要： A super-lattice structure is used for a portion of a laser device of a self-aligned structure to lower the resistance of the device by utilizing the extension of electric current in the layer, paying attention to the fact that the lateral conduction of high density doping in the super-lattice structure is effective for decreasing the resistance of the laser, in order to lower the operation voltage and increase the power in nitride type wide gap semiconductor devices in which crystals with high carrier density are difficult to obtain and the device resistance is high.
摘要翻译：超晶格结构用于自对准结构的激光器件的一部分，通过利用层中的电流的延伸来降低器件的电阻，注意高密度的横向传导的事实在超晶格结构中的掺杂对于降低激光器的电阻是有效的，以便降低操作电压并增加难以获得具有高载流子密度的晶体的氮化物型宽间隙半导体器件的功率，并且器件电阻高。

10. 发明授权

US5543629A Superlattice avalanche photodiode (APD) 失效
标题翻译：超晶格雪崩光电二极管（APD）
公开(公告)号：US5543629A
公开(公告)日：1996-08-06
申请号：US391287
申请日：1995-02-21
申请人： Hitoshi Nakamura , Shoichi Hanatani , Shigehisa Tanaka , Tsukuru Ohtoshi , Koji Ishida , Yausunobu Matsuoka
发明人： Hitoshi Nakamura , Shoichi Hanatani , Shigehisa Tanaka , Tsukuru Ohtoshi , Koji Ishida , Yausunobu Matsuoka
IPC分类号： H01L31/107 , H01L31/0352 , H01L29/15
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/1075
摘要： A superlattice APD includes light absorption layer for generating carriers by absorbing light, a multiplication layer for multiplying the carriers, and a pair of electrodes for driving the carriers. The multiplication layer includes a superlattice structure with a well layer less than 10 nm in thickness and a barrier layer more than 10 nm and less than 20 nm in thickness deposited in alternate layers.
摘要翻译：超晶格APD包括用于通过吸收光产生载流子的光吸收层，用于乘以载波的乘法层和用于驱动载流子的一对电极。倍增层包括具有厚度小于10nm的阱层和在交替层中沉积的厚度大于10nm且小于20nm的势垒层的超晶格结构。

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