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1. 发明授权

US06746238B2 Cooling system for reducing particles pollution 有权
标题翻译：减少颗粒污染的冷却系统
公开(公告)号：US06746238B2
公开(公告)日：2004-06-08
申请号：US10120413
申请日：2002-04-12
申请人： Eric Chu , Kevin Chiang , Ling-Hsin Tseng , Ken Yew
发明人： Eric Chu , Kevin Chiang , Ling-Hsin Tseng , Ken Yew
IPC分类号： F27D1502
CPC分类号： H01L21/67109 , C21D1/613 , F23M5/085 , F23M7/04 , H01L21/67754
摘要： The present invention relates to a cooling system of a furnace, and more particularly, to a multi-cycle cooling system, located by the furnace door. The multi-cycle cooling system comprises the first gas cooling cycle, the second gas cooling cycle, the first liquid cooling cycle, the second liquid cooling cycle, the heat sinks and the heat insulation slot. When inside the process tube proceeds the high temperature process like depositing process, the first gas cooling cycle and the second gas cooling cycle are opened and the second liquid cooling cycle is closed at the same time. The second gas cooling cycle and the second liquid cooling cycle are assembled in the first flange, which is located on the process tube and contacts with the door. The first liquid cooling cycle in the second flange, which is located on the process tube and contacts with the first range, is always opened. When inside the process tube not proceeds the high temperature process, the first gas cooling cycle and the second gas cooling cycle are closed and the second liquid cycle is opened at the same time. The heat sinks and the heat insulation slot are on the door to increase the heat conduction efficiency of the door and to extend the lifetime of the elements on the door. The first liquid cooling cycle and the second cooling cycle are the independent cooling systems to each other. The first flange is located between the door and the second flange.
摘要翻译：本发明涉及一种炉的冷却系统，更具体地说，涉及一种由炉门定位的多循环冷却系统。多循环冷却系统包括第一气体冷却循环，第二气体冷却循环，第一液体冷却循环，第二液体冷却循环，散热器和隔热槽。当处理管内部进行如沉积工艺的高温处理时，第一气体冷却循环和第二气体冷却循环被打开，并且第二液体冷却循环同时关闭。第二气体冷却循环和第二液体冷却循环组装在位于处理管上并与门接触的第一凸缘中。始终打开位于处理管上并与第一范围接触的第二法兰中的第一液体冷却循环。当处理管内部不进行高温处理时，第一气体冷却循环和第二气体冷却循环被关闭，并且第二液体循环同时打开。散热器和隔热槽位于门上，以增加门的热传导效率，并延长元件在门上的使用寿命。第一个液体冷却循环和第二个冷却循环是彼此独立的冷却系统。第一凸缘位于门和第二凸缘之间。

2. 发明授权

US06427470B1 Cooling system for reducing particles pollution 有权
标题翻译：减少颗粒污染的冷却系统
公开(公告)号：US06427470B1
公开(公告)日：2002-08-06
申请号：US09776745
申请日：2001-02-05
申请人： Eric Chu , Kevin Chiang , Ling-Hsin Tseng , Ken Yew
发明人： Eric Chu , Kevin Chiang , Ling-Hsin Tseng , Ken Yew
IPC分类号： F25D2312
CPC分类号： H01L21/67109 , C21D1/613 , F23M5/085 , F23M7/04 , H01L21/67754
摘要： The present invention relates to a cooling system of a furnace, more particularly, to a multi-cycle cooling system, located by the furnace door. The probability of pollution by particles can be decreased and the lifetime of the furnace devices can be extended by using different liquid and gas cycles, cooling the different steps the semiconductor processes in the furnace.
摘要翻译：本发明涉及一种炉的冷却系统，更具体地说，涉及一种由炉门定位的多循环冷却系统。可以减少颗粒污染的可能性，并且可以通过使用不同的液体和气体循环来延长炉装置的寿命，冷却炉中半导体工艺的不同步骤。

3. 发明授权

US5759498A Gas exhaust apparatus 失效
标题翻译：排气装置
公开(公告)号：US5759498A
公开(公告)日：1998-06-02
申请号：US764908
申请日：1996-12-12
申请人： David Sheu , Ling-Hsin Tseng , Ka-Hing Wong , D. Y. Sheu
发明人： David Sheu , Ling-Hsin Tseng , Ka-Hing Wong , D. Y. Sheu
IPC分类号： B01D47/06 , B01D53/74 , F23G7/06 , F28G1/08 , F28G1/16
CPC分类号： F23G7/063 , B01D47/06 , B01D53/74 , F23G2209/142
摘要： Improved gas exhaust apparatus of a semiconductor plant for substantially reducing the accumulation of solid substance on the surface of a gas exhaust system is disclosed. The apparatus includes a heating section for providing a thermal chamber, thereby transforming incoming gas and oxygen into solid substance. A barrier section is secured to an inner surface of the heating section for preventing the solid substance from accumulating on the inner surface of the heating section. A scrubbing section attached to the heating section is used to expel the solid substance out of the gas exhaust apparatus.
摘要翻译：公开了一种半导体装置的改进的排气装置，用于大大减少固体物质在排气系统表面上的积聚。该装置包括用于提供热室的加热部分，从而将进入的气体和氧气转化为固体物质。阻挡部固定在加热部的内表面，用于防止固体物质积聚在加热部的内表面。用于将附着于加热部分的洗涤部分从固体物质排出排气装置。

4. 发明授权

US6119717A Fluid flow control apparatus 失效
标题翻译：流体流量控制装置
公开(公告)号：US6119717A
公开(公告)日：2000-09-19
申请号：US235164
申请日：1999-01-22
申请人： Ling-Hsin Tseng , Junson Shu , David Sheu
发明人： Ling-Hsin Tseng , Junson Shu , David Sheu
IPC分类号： G05D7/06 , G05D11/03
CPC分类号： G05D7/0635
摘要： A fluid flow control apparatus precisely controls a slight flow of fluid being mixed with a carrier gas. The apparatus includes a container for containing the fluid and a conduit for conducting the fluid, one portion of the conduit having a smaller diameter than the other, the smaller diameter portion of the conduit Including a needle valve for controlling the flow of the carrier gas into the conduit. A fluid transmission line connected at one end to the conduit and at the other end to the container conducts fluid from the container into the conduit to be mixed with the carrier gas before the mixture is introduced into a reacting chamber.
摘要翻译：流体流量控制装置精确地控制与载气混合的流体的轻微流动。该装置包括用于容纳流体的容器和用于传导流体的导管，导管的一部分具有比另一个更小的直径，导管的较小直径部分包括用于控制载气流入的针阀导管。在一端连接到导管并且在另一端连接到容器的流体传输线在将混合物引入反应室之前将流体从容器传导到导管中以与载气混合。

5. 发明授权

US06334404B1 Method and apparatus for reducing particle contamination on wafers 失效
标题翻译：降低晶圆上颗粒污染的方法和装置
公开(公告)号：US06334404B1
公开(公告)日：2002-01-01
申请号：US09314631
申请日：1999-05-19
申请人： Tien-Jui Liu , Ling-Hsin Tseng
发明人： Tien-Jui Liu , Ling-Hsin Tseng
IPC分类号： C23C1600
CPC分类号： H01L21/67316 , C23C16/4401 , C23C16/4581 , C30B25/08 , C30B25/12 , C30B31/10 , C30B31/14
摘要： A method and apparatus for reducing particle contamination on wafers is disclosed. The method includes providing a semiconductor furnace system having an ideal reaction chamber, an electrostatic generator, a conducting wire, and a conductive ring. Moreover, an insulating layer is coated over the entire wafer boat carrier, that is part of the reaction chamber. Charges with a first polarity are generated after a reaction process carried out inside the chamber and before the “vacuum breaking” stage. These charges spread evenly across the entire exposed surface of the wafer boat carrier and repulse particles carrying the same polarity away from the wafers that are in process.
摘要翻译：公开了一种用于减少晶片上的颗粒污染的方法和装置。该方法包括提供具有理想反应室，静电发生器，导线和导电环的半导体炉系统。此外，绝缘层涂覆在整个晶片舟状载体上，该载体是反应室的一部分。在室内进行反应处理之后，在“真空破坏”阶段之前产生具有第一极性的电荷。这些电荷均匀地分布在晶片舟状载体的整个暴露表面上，并且将与相当极性相反的粒子从与正在处理的晶片相分离。

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