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1. 发明授权

US08093133B2 Transient voltage suppressor and methods 有权
标题翻译：瞬态电压抑制器及方法
公开(公告)号：US08093133B2
公开(公告)日：2012-01-10
申请号：US12098369
申请日：2008-04-04
申请人： Emmanuel Saucedo-Flores , Mingjiao Liu , Francine Y. Robb , Ali Salih
发明人： Emmanuel Saucedo-Flores , Mingjiao Liu , Francine Y. Robb , Ali Salih
IPC分类号： H01L21/20
CPC分类号： H01L29/87 , H01L29/747 , H01L29/866
摘要： Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.
摘要翻译：瞬态电压抑制器和制造瞬态电压抑制器的方法，该电压抑制器在齐纳一区域附近的栅极区域的与偏离齐纳一区域的栅极区域的一部分中的掺杂浓度不同的部分中具有掺杂剂或载流子浓度。

2. 发明申请

US20090250720A1 TRANSIENT VOLTAGE SUPPRESSOR AND METHODS 有权
标题翻译：瞬态电压抑制器和方法
公开(公告)号：US20090250720A1
公开(公告)日：2009-10-08
申请号：US12098369
申请日：2008-04-04
申请人： Emmanuel Saucedo-Flores , Mingjiao Liu , Francine Y. Robb , Ali Salih
发明人： Emmanuel Saucedo-Flores , Mingjiao Liu , Francine Y. Robb , Ali Salih
IPC分类号： H01L29/866 , H01L21/20
CPC分类号： H01L29/87 , H01L29/747 , H01L29/866
摘要： Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is away from the Zener region.
摘要翻译：瞬态电压抑制器和制造瞬态电压抑制器的方法，该电压抑制器在齐纳一区域附近的栅极区域的与偏离齐纳一区域的栅极区域的一部分中的掺杂浓度不同的部分中具有掺杂剂或载流子浓度。

3. 发明申请

US20090273876A1 TRANSIENT VOLTAGE SUPPRESSOR AND METHOD 有权
标题翻译：瞬态电压抑制器和方法
公开(公告)号：US20090273876A1
公开(公告)日：2009-11-05
申请号：US12113843
申请日：2008-05-01
申请人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
发明人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
IPC分类号： H02H9/04
CPC分类号： H01L27/0262 , H01L29/7436 , H01L29/866
摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
摘要翻译：瞬态电压抑制器和防止浪涌和静电放电事件的方法。第一导电类型的半导体衬底具有形成在其中的第二导电类型的栅极和阳极区域。 PN结二极管由栅极区域和半导体衬底的一部分形成。阴极与栅极区域的另一部分相邻地形成。从阴极，栅极区域，衬底和阳极区域形成晶闸管。齐纳二极管由栅极区域和半导体衬底的其它部分形成。第二齐纳二极管具有大于第一齐纳二极管的击穿电压并且大于晶闸管的跳变电压的击穿电压。第一个齐纳二极管可防止浪涌事件，第二个齐纳二极管可防止静电放电事件。

4. 发明申请

US20090273868A1 TRANSIENT VOLTAGE SUPPRESSOR AND METHOD 审中-公开
公开(公告)号：US20090273868A1
公开(公告)日：2009-11-05
申请号：US12116745
申请日：2008-05-07
申请人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
发明人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
IPC分类号： H02H9/04
CPC分类号： H01L27/0262 , H01L29/7436 , H01L29/866
摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.

5. 发明授权

US08339758B2 Transient voltage suppressor and method 有权
标题翻译：瞬态电压抑制器及方法
公开(公告)号：US08339758B2
公开(公告)日：2012-12-25
申请号：US12113843
申请日：2008-05-01
申请人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
发明人： Mingjiao Liu , Ali Salih , Emmanuel Saucedo-Flores , Suem Ping Loo
IPC分类号： H02H9/04
CPC分类号： H01L27/0262 , H01L29/7436 , H01L29/866
摘要： A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.
摘要翻译：瞬态电压抑制器和防止浪涌和静电放电事件的方法。第一导电类型的半导体衬底具有形成在其中的第二导电类型的栅极和阳极区域。 PN结二极管由栅极区域和半导体衬底的一部分形成。阴极与栅极区域的另一部分相邻地形成。从阴极，栅极区域，衬底和阳极区域形成晶闸管。齐纳二极管由栅极区域和半导体衬底的其它部分形成。第二齐纳二极管具有大于第一齐纳二极管的击穿电压并且大于晶闸管的跳变电压的击穿电压。第一个齐纳二极管可防止浪涌事件，第二个齐纳二极管可防止静电放电事件。

6. 发明申请

US20090162988A1 METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR 有权
公开(公告)号：US20090162988A1
公开(公告)日：2009-06-25
申请号：US12395076
申请日：2009-02-27
申请人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, JR. , George Chang
发明人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, JR. , George Chang
IPC分类号： H01L21/77 , H01L21/762
CPC分类号： H01L29/8613 , H01L27/0255 , H01L29/8618 , Y10S257/929 , Y10S438/966 , Y10S438/983
摘要： In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

7. 发明申请

US20090079001A1 MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR 有权
标题翻译：多通道ESD器件及其方法
公开(公告)号：US20090079001A1
公开(公告)日：2009-03-26
申请号：US11859624
申请日：2007-09-21
申请人： Ali Salih , Mingjiao Liu , Sudhama C. Shastri , Thomas Keena , Gordon M. Grivna , John Michael Parsey, JR. , Francine Y. Robb , Ki Chang
发明人： Ali Salih , Mingjiao Liu , Sudhama C. Shastri , Thomas Keena , Gordon M. Grivna , John Michael Parsey, JR. , Francine Y. Robb , Ki Chang
IPC分类号： H01L23/62 , H01L21/84
CPC分类号： H01L27/0255 , H01L23/60 , H01L2924/0002 , Y10S438/983 , H01L2924/00
摘要： In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
摘要翻译：在一个实施例中，ESD器件被配置为包括齐纳二极管和P-N二极管。

8. 发明授权

US08039359B2 Method of forming low capacitance ESD device and structure therefor 有权
标题翻译：低容量ESD器件的形成方法及其结构
公开(公告)号：US08039359B2
公开(公告)日：2011-10-18
申请号：US12395076
申请日：2009-02-27
申请人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, Jr. , George Chang
发明人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, Jr. , George Chang
IPC分类号： H01L21/76 , H01L23/62
CPC分类号： H01L29/8613 , H01L27/0255 , H01L29/8618 , Y10S257/929 , Y10S438/966 , Y10S438/983
摘要： In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
摘要翻译：在一个实施例中，ESD器件使用ESD器件内深度的高掺杂P和N区域形成具有受控击穿电压的齐纳二极管。

9. 发明授权

US07538395B2 Method of forming low capacitance ESD device and structure therefor 有权
标题翻译：低容量ESD器件的形成方法及其结构
公开(公告)号：US07538395B2
公开(公告)日：2009-05-26
申请号：US11859570
申请日：2007-09-21
申请人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, Jr. , George Chang
发明人： Thomas Keena , Ki Chang , Francine Y. Robb , Mingjiao Liu , Ali Salih , John Michael Parsey, Jr. , George Chang
IPC分类号： H01L23/62 , G11C11/36 , H01L21/00
CPC分类号： H01L29/8613 , H01L27/0255 , H01L29/8618 , Y10S257/929 , Y10S438/966 , Y10S438/983
摘要： In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
摘要翻译：在一个实施例中，ESD器件使用ESD器件内深度的高掺杂P和N区域形成具有受控击穿电压的齐纳二极管。

10. 发明授权

US07579632B2 Multi-channel ESD device and method therefor 有权
标题翻译：多通道ESD器件及其方法
公开(公告)号：US07579632B2
公开(公告)日：2009-08-25
申请号：US11859624
申请日：2007-09-21
申请人： Ali Salih , Mingjiao Liu , Sudhama C. Shastri , Thomas Keena , Gordon M. Grivna , John Michael Parsey, Jr. , Francine Y. Robb , Ki Chang
发明人： Ali Salih , Mingjiao Liu , Sudhama C. Shastri , Thomas Keena , Gordon M. Grivna , John Michael Parsey, Jr. , Francine Y. Robb , Ki Chang
IPC分类号： H01L23/62
CPC分类号： H01L27/0255 , H01L23/60 , H01L2924/0002 , Y10S438/983 , H01L2924/00
摘要： In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
摘要翻译：在一个实施例中，ESD器件被配置为包括齐纳二极管和P-N二极管。

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