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    • 6. 发明申请
    • SEMICONDUCTOR DEVICE HAVING THROUGH-SUBSTRATE VIA
    • 具有通过基底的半导体器件
    • US20130181349A1
    • 2013-07-18
    • US13599041
    • 2012-08-30
    • Chie KOYAMASatoyuki MiyakoEiji Sato
    • Chie KOYAMASatoyuki MiyakoEiji Sato
    • H01L23/498
    • H01L23/481H01L21/76224H01L23/5225H01L23/5286H01L27/14618H01L27/14636H01L2924/0002H01L2924/00
    • According to an embodiment, a semiconductor device includes a first circuit block, a first through-substrate via, and a back surface wiring. The first circuit block is provided on a surface side of a semiconductor substrate. The first through-substrate via is provided along a circumference of the first circuit block so as to separate the first circuit block from other circuit blocks. The first circuit block is provided so as to penetrate the surface of the semiconductor substrate. The first circuit block is isolated from the surroundings. The first circuit block has conductivity. The back surface wiring is provided on the back surface side of the semiconductor substrate. The back surface wiring is connected to the first through-substrate via. The back surface wiring connects the first through-substrate via to a power supply terminal or a shield potential terminal.
    • 根据实施例,半导体器件包括第一电路块,第一贯穿衬底通孔和背面布线。 第一电路块设置在半导体衬底的表面侧。 沿着第一电路块的圆周设置第一贯穿衬底通孔,以将第一电路块与其它电路块分离。 第一电路块被设置为穿透半导体衬底的表面。 第一个电路块与周围环境隔绝。 第一个电路块具有导电性。 背面布线设置在半导体基板的背面侧。 背面布线连接到第一贯穿基板通孔。 背面布线将第一贯穿基板通孔连接到电源端子或屏蔽电位端子。