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1. 发明授权

US06956255B2 Semiconductor device and drive circuit using the semiconductor devices 失效
标题翻译：使用半导体器件的半导体器件和驱动电路
公开(公告)号：US06956255B2
公开(公告)日：2005-10-18
申请号：US10289306
申请日：2002-11-07
申请人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
发明人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
IPC分类号： H01L21/331 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8249 , H01L23/367 , H01L27/04 , H01L27/06 , H01L29/73 , H01L29/732 , H01L29/786 , H01L29/80 , H01L39/112
CPC分类号： H01L29/7322 , H01L21/8249 , H01L23/3677 , H01L29/7317 , H01L2224/82 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a p+ extrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.
摘要翻译：提供了高速双极晶体管，其在不增加衬底电容的情况下改善了散热的效果。基极区域和硅衬底之间的热辐射连接包括一个非本征基极多晶硅电极和一个埋在具有非常薄的二氧化硅侧壁的隔离槽中的多晶硅层。因此，在基底处产生的热量通过该路径被辐射到硅衬底。此外，与以前的结构相比，隔离槽的内壁上的二氧化硅的膜厚度充分增加，以防止衬底电容的增加。因此，可以获得高速工作的双极晶体管，并且在不增加衬底电容的情况下提高散热的效果。

2. 发明授权

US06974977B2 Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US06974977B2
公开(公告)日：2005-12-13
申请号：US10457428
申请日：2003-06-10
申请人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
发明人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
IPC分类号： H01L29/72 , G02B6/42 , H01L21/331 , H01L29/737 , H03F3/45
CPC分类号： H01L29/66242 , G02B6/4251 , G02B6/4274 , H01L29/7375 , H01L29/7378 , H03F3/45085 , H03F3/45089 , H03F2200/372 , H03F2203/45311 , H03F2203/45574 , H03F2203/45612 , H03F2203/45652 , H03F2203/45722
摘要： A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
摘要翻译：提供了具有高可靠性和高增益的双极晶体管，并且特别适用于高速运行。双极晶体管以高精度工作，即使在集电极电压变化时也不会对集电极电流产生实质性的变化。与传统的集电极电流双极晶体管相比，它具有较小的变化，同时确保了高速性能和高增益。在一个示例中，基极区域中的带隙小于发射极和集电极区域中的带隙。带隙在与发射极区域的结点附近是恒定的，并且朝着与集电极区域的结点减小。单晶硅/锗通常用于基极区域。

3. 发明授权

US06600178B1 Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US06600178B1
公开(公告)日：2003-07-29
申请号：US09599741
申请日：2000-06-23
申请人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
发明人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
IPC分类号： H01L29737
CPC分类号： H01L29/66242 , G02B6/4251 , G02B6/4274 , H01L29/7375 , H01L29/7378 , H03F3/45085 , H03F3/45089 , H03F2200/372 , H03F2203/45311 , H03F2203/45574 , H03F2203/45612 , H03F2203/45652 , H03F2203/45722
摘要： A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
摘要翻译：提供了具有高可靠性和高增益的双极晶体管，并且特别适用于高速运行。双极晶体管以高精度工作，即使在集电极电压变化时也不会对集电极电流产生实质性的变化。与传统的集电极电流双极晶体管相比，它具有较小的变化，同时确保了高速性能和高增益。在一个示例中，基极区域中的带隙小于发射极和集电极区域中的带隙。带隙在与发射极区域的结点附近是恒定的，并且朝着与集电极区域的结点减小。单晶硅/锗通常用于基极区域。

4. 发明授权

US06476450B2 BICMOS semiconductor integrated circuit device and fabrication process thereof 失效
标题翻译： BICMOS半导体集成电路器件及其制造工艺
公开(公告)号：US06476450B2
公开(公告)日：2002-11-05
申请号：US09808952
申请日：2001-03-16
申请人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
发明人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
IPC分类号： H01L29732
CPC分类号： H01L27/0623 , H01L21/8249 , H01L2924/0002 , H01L2924/00
摘要： Provided is a BiCOMOS semiconductor integrated circuit device which comprises a semiconductor substrate having an insulating layer internally and partially embedded therein and a semiconductor layer deposited on the insulating layer, an insulated gate type transistor formed in the semiconductor layer, a highly-doped collector layer of a bipolar transistor embedded in an insulating-layer-free portion of the semiconductor substrate, and a low-doped collector layer disposed on the highly-doped collector layer of the bipolar transistor, wherein the height level of the lower portion of the low-doped collector layer is below the height level of the lower portion of the insulating layer so as to attain high breakdown voltage and high speed operation of the bipolar transistor.
摘要翻译：本发明提供一种BiCOMOS半导体集成电路器件，其包括半导体衬底，该半导体衬底具有内部并部分地嵌入其中的绝缘层和沉积在绝缘层上的半导体层，形成在半导体层中的绝缘栅型晶体管，高度掺杂的集电极层嵌入在半导体衬底的绝缘层的部分中的双极晶体管，以及设置在双极晶体管的高掺杂集电极层上的低掺杂集电极层，其中低掺杂量的下部的高度电平集电极层在绝缘层的下部的高度以下，以获得双极晶体管的高击穿电压和高速工作。

5. 发明授权

US06815822B2 BICMOS semiconductor integrated circuit device and fabrication process thereof 失效
标题翻译： BICMOS半导体集成电路器件及其制造工艺
公开(公告)号：US06815822B2
公开(公告)日：2004-11-09
申请号：US10237705
申请日：2002-09-10
申请人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
发明人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
IPC分类号： H01L2348
CPC分类号： H01L27/0623 , H01L21/8249 , H01L2924/0002 , H01L2924/00
摘要： Provided is a BiCOMOS semiconductor integrated circuit device which comprises a semiconductor substrate having an insulating layer internally and partially embedded therein and a semiconductor layer deposited on the insulating layer, an insulated gate type transistor formed in the semiconductor layer, a highly-doped collector layer of a bipolar transistor embedded in an insulating-layer-free portion of the semiconductor substrate, and a low-doped collector layer disposed on the highly-doped collector layer of the bipolar transistor, wherein the height level of the lower portion of the low-doped collector layer is below the height level of the lower portion of the insulating layer so as to attain high breakdown voltage and high speed operation of the bipolar transistor.
摘要翻译：本发明提供一种BiCOMOS半导体集成电路器件，其包括半导体衬底，该半导体衬底具有内部并部分地嵌入其中的绝缘层和沉积在绝缘层上的半导体层，形成在半导体层中的绝缘栅型晶体管，高度掺杂的集电极层嵌入在半导体衬底的绝缘层的部分中的双极晶体管，以及设置在双极晶体管的高掺杂集电极层上的低掺杂集电极层，其中低掺杂量的下部的高度电平集电极层在绝缘层的下部的高度以下，以获得双极晶体管的高击穿电压和高速工作。

6. 发明授权

US06501153B2 Semiconductor device and drive circuit using the semiconductor devices 失效
公开(公告)号：US06501153B2
公开(公告)日：2002-12-31
申请号：US10067233
申请日：2002-02-07
申请人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
发明人： Eiji Oue , Katsuyoshi Washio , Masao Kondo , Hiromi Shimamoto
IPC分类号： H01L2906
CPC分类号： H01L29/7322 , H01L21/8249 , H01L23/3677 , H01L29/7317 , H01L2224/82 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A high-speed bipolar transistor is provided which is improved in the effect of heat radiation without increasing the substrate capacitance. The heat radiation connection between a base region and a silicon substrate includes a p+ extrinsic base polysilicon electrode and a polysilicon layer buried in an isolation groove with a very thin silicon dioxide side wall. Accordingly, the heat generated at the base is radiated through this path to the silicon substrate. Further, the film thickness of the silicon dioxide on the inner wall of the isolation groove is sufficiently increased compared with previous structures to prevent an increase in the substrate capacitance. Consequently, there can be obtained a bipolar transistor which operates at high speed, and is improved in the effect of heat radiation without increasing the substrate capacitance.

7. 发明授权

US06472753B2 BICMOS semiconductor integrated circuit device and fabrication process thereof 失效
公开(公告)号：US06472753B2
公开(公告)日：2002-10-29
申请号：US09811478
申请日：2001-03-20
申请人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
发明人： Masao Kondo , Katsuyoshi Washio , Eiji Oue , Hiromi Shimamoto
IPC分类号： H01L2348
CPC分类号： H01L27/0623 , H01L21/8249 , H01L2924/0002 , H01L2924/00
摘要： Provided is a BiCOMOS semiconductor integrated circuit device which comprises a semiconductor substrate having an insulating layer internally and partially embedded therein and a semiconductor layer deposited on the insulating layer, an insulated gate type transistor formed in the semiconductor layer, a highly-doped collector layer of a bipolar transistor embedded in an insulating-layer-free portion of the semiconductor substrate, and a low-doped collector layer disposed on the highly-doped collector layer of the bipolar transistor, wherein the height level of the lower portion of the low-doped collector layer is below the height level of the lower portion of the insulating layer so as to attain high breakdown voltage and high speed operation of the bipolar transistor.

8. 发明授权

US06521974B1 Bipolar transistor and manufacturing method thereof 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06521974B1
公开(公告)日：2003-02-18
申请号：US09689800
申请日：2000-10-13
申请人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
发明人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
IPC分类号： H01L2970
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.
摘要翻译：根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外，在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

9. 发明授权

US06482710B2 Bipolar transistor and manufacting method thereof 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06482710B2
公开(公告)日：2002-11-19
申请号：US09811559
申请日：2001-03-20
申请人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
发明人： Katsuya Oda , Eiji Ohue , Masao Kondo , Katsuyoshi Washio , Masamichi Tanabe , Hiromi Shimamoto
IPC分类号： H01L21331
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made of polycrystal Si—Ge by doping at high concentration, further, a part immediately under the intrinsic base has the same conductive type as that of a collector and in a peripheral part, a single crystal Si—Ge layer having the same conductive type as that of a base is provided between the intrinsic base and a collector layer. Hereby, the reduction of the resistance of the link base between the intrinsic base and the base leading-out electrode and the reduction of capacitance between the collector and the base are simultaneously realized, and a self-aligned bipolar transistor wherein capacitance between an emitter and the base and capacitance between the collector and the base are respectively small, power consumption is small and high speed operation is enabled is acquired.
摘要翻译：根据本发明的双极晶体管具有以下结构：由单晶Si-Ge构成的本征基极和基极引出电极通过高浓度掺杂的由多晶Si-Ge制成的连接基底连接，此外，在本征基底之下的部分具有与集电体相同的导电类型，并且在外围部分中，在本征基极和集电极层之间设置具有与基底相同的导电类型的单晶Si-Ge层。因此，同时实现本征基极与基极引出电极之间的基极的电阻的降低和集电极与基极之间的电容的减小，以及自对准双极晶体管，其中发射极和集电极和基极之间的基极和电容分别小，功耗小，获得高速运行。

10. 发明授权

US07098740B2 Radio frequency power amplifier and communication system 失效
标题翻译：射频功率放大器和通信系统
公开(公告)号：US07098740B2
公开(公告)日：2006-08-29
申请号：US10688976
申请日：2003-10-21
申请人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
发明人： Masao Kondo , Toru Masuda , Katsuyoshi Washio
IPC分类号： H03F3/68
CPC分类号： H03F3/211 , H03F1/302 , H03F2200/372 , H03F2203/21178
摘要： There is provided not only a radio frequency power amplifier using an SiGe HBT subject to a little amplification distortion, but also a communication system using the same. A conventional radio frequency power amplifier provides base bias paths of transistors Q1 through QN (SiGe HBT) with bias resistors R11 through R1N having resistance values three to five times higher than those of a ballast resistor attached to each transistor's base. A coil LB is provided in parallel with the bias resistor as a means for compensating a voltage drop due to direct current component IDC flowing through the bias resistor. Addition of the bias resistor suppresses non-linearity of low-frequency variations in an output current. Addition of the coil compensates for voltage drop. Accordingly, the maximum linear output power can be improved. As a result, it is possible to provide the power amplifier subject to a little amplification distortion within a wide output range.
摘要翻译：不仅提供使用SiGe HBT的射频功率放大器，而且具有很小的放大失真，而且还提供了使用它的通信系统。传统的射频功率放大器提供具有偏置电阻器R11至R11的晶体管Q 1至Q N（SiGe HBT）的基极偏置路径， SUB> 1N 的电阻值是连接到每个晶体管基极的镇流电阻的三到五倍。作为用于补偿流过偏置电阻器的直流分量I DC的电压降的装置，设置有与偏压电阻并联的线圈L B B。增加偏置电阻抑制输出电流中低频变化的非线性。线圈的添加补偿电压降。因此，可以提高最大线性输出功率。结果，可以在宽的输出范围内提供具有小的放大失真的功率放大器。

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