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1. 发明授权

US4378417A Electrophotographic member with .alpha.-Si layers 失效
标题翻译：具有α-Si层的电子照相元件
公开(公告)号：US4378417A
公开(公告)日：1983-03-29
申请号：US254294
申请日：1981-04-15
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.
摘要翻译：在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙至少1.6eV，电阻率至少为1010欧米加。电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为可以增加更长波长的光。

2. 再颁专利

USRE33094E Electrophotographic member with alpha-si layers 失效
标题翻译：具有α-si层的电子照相元件
公开(公告)号：USRE33094E
公开(公告)日：1989-10-17
申请号：US162312
申请日：1986-09-11
申请人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
发明人： Eiichi Maruyama , Sachio Ishioka , Yoshinori Imamura , Hirokazu Matsubara , Yasuharu Shimomoto , Shinkichi Horigome , Yoshio Taniguchi
IPC分类号： G03G5/08 , G03G5/082 , H01L21/205 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/08221
摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

3. 发明授权

US4380557A Method of production of image pickup device 失效
标题翻译：图像拾取装置的制造方法
公开(公告)号：US4380557A
公开(公告)日：1983-04-19
申请号：US287554
申请日：1981-07-28
申请人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
发明人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10
CPC分类号： H01J9/233
摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
摘要翻译：在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性通过这种热处理高度改善了层。例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

4. 发明授权

US4377628A Electrophotographic member with .alpha.-Si and H 失效
标题翻译：具有α-Si和H的电子照相元件
公开(公告)号：US4377628A
公开(公告)日：1983-03-22
申请号：US257346
申请日：1981-04-24
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , G03F7/20 , G03G5/082 , H01L31/08 , G03G5/14
CPC分类号： G03F7/70216 , G03F7/707 , G03G5/08221 , G03G5/08235
摘要： Disclosed is an electrophotographic member having an amorphous-silicon photoconductive layer, wherein the distance between a portion in which light illuminating the photoconductor is absorbed therein until its intensity decreases to 1% of that at incidence and the interface of the photoconductor opposite to the light incidence side thereof is at most 5 .mu.m, whereby the residual potential of the photoconductive layer can be reduced.That part of the photoconductive layer constituting the electrophotographic member which is at least 10 nm thick inwardly of the photoconductive layer from the surface thereof to store charges is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..multidot.cm. Further, within such photoconductive layer, a region of amorphous silicon which has an optical forbidden band gap smaller than that of the amorphous silicon forming the surface part is disposed at a thickness of at least 10 nm. By forming the region of the narrower optical forbidden band gap within the photoconductive layer in this manner, the sensitivity of the photoconductive layer to light of longer wavelengths can be enhanced.
摘要翻译：公开了具有非晶硅光电导层的电子照相构件，其中照射光电导体的光被吸收到其中的部分之间的距离，直到其强度降低到其入射时的1％，并且光电导体的与光入射相反的界面一侧为5μm以下，能够降低光电导层的残留电位。构成电子照相构件的光电导元件的从其表面向内存储电荷的至少10nm厚的电子照相构件的部分由非晶硅制成，其具有至少1.6eV的光学禁带宽和电阻率至少1010 OMEGA xcm。此外，在这种光导电层内，具有比形成表面部分的非晶硅的光学禁带宽小的非晶硅区域设置在至少10nm的厚度。通过以这种方式在光导电层内形成较窄的光学禁带区域，可以提高光电导层对较长波长的光的灵敏度。

5. 发明授权

US4365013A Electrophotographic member 失效
标题翻译：电子照相成份
公开(公告)号：US4365013A
公开(公告)日：1982-12-21
申请号：US287633
申请日：1981-07-28
申请人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
发明人： Sachio Ishioka , Eiichi Maruyama , Yoshinori Imamura , Hirokazu Matsubara , Shinkichi Horigome
IPC分类号： G03G5/08 , C23C14/14 , C23C14/35 , G03G5/082 , G03G5/14 , G03G5/147 , H01L31/08
CPC分类号： G03G5/08235 , G03G5/144 , G03G5/14704
摘要： Disclosed is an electrophotographic member having at least a supporter and a photoconductor layer formed mainly of amorphous silicon, characterized in that the amorphous silicon contains at least 50 atomic-% of silicon and at least 1 atomic-% of hydrogen as an average within the layer, and that a part which is at least 10 nm thick from a surface or/and interface of the photoconductor layer toward the interior of the photoconductor layer has a hydrogen content in a range of at least 1 atomic-% to at most 40 atomic-% and an optical forbidden band gap in a range of at least 1.3 eV to at most 2.5 eV and also has the property that an intensity of at least one of peaks having centers at wave numbers of approximately 2,200 cm.sup.-1, approximately 1,140 cm.sup.-1, approximately 1,040 cm.sup.-1, approximately 650 cm.sup.-1, approximately 860 cm.sup.-1 and approximately 800 cm.sup.-1 in an infrared absorption spectrum as are attributed to a bond between silicon and oxygen does not exceed 20% of a higher one of intensities of peaks having centers at wave numbers of approximately 2,000 cm.sup.-1 and approximately 2,100 cm.sup.-1 as are attributed to a bond between silicon and hydrogen. Dark decay characteristics are good, and a satisfactory surface potential can be secured. In addition, the characteristics are stable versus time.
摘要翻译：公开了一种具有至少一种支撑体和主要由非晶硅形成的感光体层的电子照相构件，其特征在于，所述无定形硅含有至少50原子％的硅和至少1原子％的氢在该层内的平均值并且从光电导体层的表面或/和界面朝向光电导体层的内部至少10nm厚的部分具有至少1原子％至至多40原子级的范围内的氢含量，至少1.3eV至至多2.5eV的范围内的光学禁带宽度，并且还具有以波数约2,200cm-1为中心的至少一个峰的强度，约为1140cm- 在归因于硅和氧之间的键的红外吸收光谱中，约1,040cm -1，约650cm -1，约650cm -1，约860cm -1和约800cm -1不超过硅和氧之间的键的20％强度o f峰由于硅和氢之间的键而归因于波数约2,000cm -1和约2,100cm -1的中心。暗衰变特性良好，可以确保令人满意的表面电位。此外，特性与时间相比是稳定的。

6. 发明授权

US4419604A Light sensitive screen 失效
标题翻译：光敏屏
公开(公告)号：US4419604A
公开(公告)日：1983-12-06
申请号：US257611
申请日：1981-04-24
申请人： Sachio Ishioka , Yoshinori Imamura , Yasuharu Shimomoto , Saburo Ataka , Yasuo Tanaka , Eiichi Maruyama
发明人： Sachio Ishioka , Yoshinori Imamura , Yasuharu Shimomoto , Saburo Ataka , Yasuo Tanaka , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233 , H01L27/14665
摘要： Disclosed is a light sensitive screen including at least a light-transmitting conductive film and a photoconductive layer, the light-transmitting conductive film being arranged on a side of incidence of light, characterized in that the photoconductive layer is constructed of a single layer or a plurality of layers of one or more photoconductive substances, at least one of such photoconductive substance layers being formed of an amorphous silicon material which contains at least 5 atomic-% to 30 atomic-% of hydrogen, whose optical forbidden band gap is 1.65 eV to 2.25 eV and whose peak component in an infrared absorption spectrum at a wave number of 2,100 cm.sup.-1 is greater than that at a wave number of 2,000 cm.sup.-1. Various characteristics of an imaging device provided with the light sensitive screen, such as dark current, lag and after image characteristics, are improved.
摘要翻译：公开了一种至少包括透光导电膜和光电导层的感光屏，所述透光导电膜布置在光入射侧，其特征在于，所述光电导层由单层或多层一层或多层感光物质，至少一层这样的光电导物质层由含有至少5原子％至30原子％氢的非晶硅材料形成，其光学禁带宽为1.65eV至 2.25eV，其波数为2100cm -1的红外吸收光谱中的峰分量大于2000cm -1的波数时的峰分量。提供了诸如暗电流，滞后和后图像特性的光敏屏幕的成像装置的各种特性得到改善。

7. 发明授权

US4609846A Image pick-up tube having collector and balance electrodes 失效
标题翻译：摄像管具有收集器和平衡电极
公开(公告)号：US4609846A
公开(公告)日：1986-09-02
申请号：US652459
申请日：1984-09-20
申请人： Chushirou Kusano , Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Hirofumi Ogawa
发明人： Chushirou Kusano , Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Hirofumi Ogawa
IPC分类号： H01J29/45 , H01J31/28 , H01J31/30 , H01J29/82
CPC分类号： H01J29/45
摘要： An image pick-up tube has a photoelectric conversion target including a transparent substrate, and a transparent electrode and a photoconductive layer formed on the transparent substrate. An electron beam is scanned on the photoelectric conversion target. A first electrode is formed on a beam scanning surface of the photoconductive layer so as to be segmented in stripe or grid with its electrode segments electrically connected to each other. A second electrode is formed on the first electrode through an insulating layer with its electrode segments electrically connected to each other. An insulating layer may be interposed between the first electrode and the photoconductive layer.
摘要翻译：图像拾取管具有包括透明基板的光电转换目标，以及形成在透明基板上的透明电极和光电导层。在光电转换靶上扫描电子束。第一电极形成在光电导层的光束扫描表面上，以便以带状或栅格分割，其电极段彼此电连接。第二电极通过绝缘层形成在第一电极上，其电极段彼此电连接。可以在第一电极和光电导层之间插入绝缘层。

8. 发明授权

US4900975A Target of image pickup tube having an amorphous semiconductor laminate 失效
标题翻译：具有非晶半导体层叠体的图像拾取管的目标
公开(公告)号：US4900975A
公开(公告)日：1990-02-13
申请号：US67229
申请日：1987-06-29
申请人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
发明人： Yasuharu Shimomoto , Sachio Ishioka , Yukio Takasaki , Tadaaki Hirai , Kazutaka Tsuji , Tatsuo Makishima , Hirokazu Matsubara , Kenji Sameshima , Junichi Yamazaki , Kenkichi Tanioka , Mitsuo Kosugi , Keiichi Shidara , Tatsuro Kawamura , Eikyuu Hiruma , Takashi Yamashita
IPC分类号： H01L31/08 , H01J29/45 , H01J31/38
CPC分类号： H01J29/456
摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.
摘要翻译：图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

9. 发明授权

US4829345A Electronic device having light transmission system 失效
标题翻译：具有光传输系统的电子设备
公开(公告)号：US4829345A
公开(公告)日：1989-05-09
申请号：US857089
申请日：1986-04-29
申请人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
发明人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
IPC分类号： H01L27/00 , G02B6/12 , G02B6/43 , H01L27/15 , H01L31/12
CPC分类号： H04B10/801 , G02B6/12002 , G02B6/43 , H01L31/12
摘要： Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.
摘要翻译：在具有多个电路部分（例如三维装置）的电子装置中，提供了通过使用光在电路部分之间传送信号的光传输系统。光传输系统由发射具有期望波长的光的发光源，吸收光并将其转换为电信号的光电转换部分和从发光源发射的光传输的光行进路径到光电转换部分。此外，发光源，光行进路径和光电转换部分中的每一个由层叠不同能隙的多种材料的超晶格结构形成。

10. 发明授权

US4556817A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US4556817A
公开(公告)日：1985-12-03
申请号：US547962
申请日：1983-11-02
申请人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
发明人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/02 , H01J31/26
CPC分类号： H01J29/456 , H01J29/45
摘要： An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.
摘要翻译：一种具有目标的高速电子束扫描和负电荷系统的图像拾取管，在透明基板上至少包括透明导电膜，光电导层，用于发射二次电子的层和条形电极。透明基板可以由非晶硅制成。

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