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1. 发明授权

US09112117B2 High brightness light emitting diode structure 有权
标题翻译：高亮度发光二极管结构
公开(公告)号：US09112117B2
公开(公告)日：2015-08-18
申请号：US13836681
申请日：2013-03-15
申请人： EPISTAR CORPORATION
发明人： Chia-Liang Hsu , Chen Ou , Chun-Hsiang Tu , De-Shan Kuo , Ting-Chia Ko , Po-Shun Chiu
IPC分类号： H01L33/00 , H01L33/46 , H01L33/20 , H01L33/40 , H01L33/42 , H01L33/38
CPC分类号： H01L33/46 , H01L33/002 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.
摘要翻译：一种发光二极管结构，包括：基板; 在所述基板上的发光半导体堆叠，其中，所述发光半导体堆叠包括第一半导体层，与所述第一半导体层具有不同极性的第二半导体层，以及所述第一半导体层与所述第二半导体层之间的发光层半导体层; 在所述基板上的第一电焊盘，其中所述第一电焊盘与所述发光半导体堆叠分离并且电连接到所述第一半导体层; 以及在所述基板上的第二电焊盘，其中所述第二电焊盘离开所述发光半导体堆叠并且电连接到所述第二半导体层，其中所述第一电焊盘和所述第二电焊盘不高于所述发光半导体堆叠

2. 发明授权

US09293656B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09293656B2
公开(公告)日：2016-03-22
申请号：US13854212
申请日：2013-04-01
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L33/36 , H01L33/42 , H01L33/22 , H01L33/00 , H01L33/40
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/22 , H01L33/40 , H01L33/405
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
摘要翻译： 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

3. 发明申请

US20140124807A1 Light Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20140124807A1
公开(公告)日：2014-05-08
申请号：US13854212
申请日：2013-04-01
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/22 , H01L33/40 , H01L33/405
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
摘要翻译： 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

4. 发明申请

US20140048830A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20140048830A1
公开(公告)日：2014-02-20
申请号：US13729842
申请日：2012-12-28
申请人： Epistar Corporation
发明人： De-Shan Kuo , Ting-Chia Ko , Chung-Hsiang Tu
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L31/02363 , H01L33/0095
摘要： A method of fabricating a light-emitting device comprising steps of: providing a substrate, an active layer, and a first semiconductor layer between the substrate and the active layer; removing part of the active layer; and forming a rough structure in the first semiconductor layer while keeping the active layer attached to the substrate.
摘要翻译：一种制造发光器件的方法，包括以下步骤：在衬底和有源层之间提供衬底，有源层和第一半导体层; 去除活性层的一部分; 并在第一半导体层中形成粗糙结构，同时保持活性层附着在基板上。

5. 发明授权

US10038129B2 Light emitting device 有权
公开(公告)号：US10038129B2
公开(公告)日：2018-07-31
申请号：US15854462
申请日：2017-12-26
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L29/18 , H01L33/62 , H01L33/30 , H01L33/60 , H01L27/15 , H01L33/42 , H01L33/08 , H01L33/32 , H01L33/06
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

6. 发明授权

US09231164B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09231164B2
公开(公告)日：2016-01-05
申请号：US13861449
申请日：2013-04-12
申请人： EPISTAR CORPORATION
发明人： Ting-Chia Ko , De-Shan Kuo , Chun-Hsiang Tu , Po-Shun Chiu , Chien-Kai Chung , Hui-Chun Yeh , Min-Yen Tsai , Tsun-Kai Ko
IPC分类号： H01L33/00 , H01L33/42 , H01L33/22 , H01L33/40
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/22 , H01L33/40 , H01L33/405
摘要： A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.
摘要翻译：发光器件包括第一半导体层; 以及透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层。

7. 发明授权

US09530948B2 Light emitting device having multi-layered electrode structure 有权
标题翻译：具有多层电极结构的发光器件
公开(公告)号：US09530948B2
公开(公告)日：2016-12-27
申请号：US15049917
申请日：2016-02-22
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L29/18 , H01L33/60 , H01L33/08 , H01L33/30 , H01L33/32 , H01L27/15
CPC分类号： H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
摘要翻译： 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

8. 发明授权

US09269855B2 Method for manufacturing high efficiency light-emitting diodes 有权
标题翻译：制造高效率发光二极管的方法
公开(公告)号：US09269855B2
公开(公告)日：2016-02-23
申请号：US14097150
申请日：2013-12-04
申请人： Epistar Corporation
发明人： Chien-Kai Chung , Ya Lan Yang , Ting-Chia Ko , Tsun-Kai Ko , Jung-Min Hwang , Schang-Jing Hon , De-Shan Kuo , Chien-Fu Shen , Ta-Cheng Hsu , Min-Hsun Hsieh
IPC分类号： H01L21/00 , H01L33/00 , H01L21/02 , H01L21/304
CPC分类号： H01L33/005 , H01L21/02057 , H01L21/3043 , H01L33/0095
摘要： A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
摘要翻译：一种制造发光器件的方法，包括以下步骤：通过激光束切割衬底以在衬底中形成空腔，并通过切割直接在衬底上产生副产物，并通过化学物质除去副产物溶液在预定的清洁温度下含有酸。

9. 发明授权

US09166105B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09166105B2
公开(公告)日：2015-10-20
申请号：US13729842
申请日：2012-12-28
申请人： Epistar Corporation
发明人： De-Shan Kuo , Ting-Chia Ko , Chung-Hsiang Tu
IPC分类号： H01L33/22 , H01L31/0236 , H01L33/00
CPC分类号： H01L33/22 , H01L31/02363 , H01L33/0095
摘要： A light-emitting device includes: a substrate; a first semiconductor layer disposed on the substrate and having a first surface; a rough structure formed in the first semiconductor layer, the rough structure comprising porous structures formed therein and a portion of the porous structures having openings exposed on the first surface of the first semiconductor layer; and an active layer formed on the first semiconductor layer.
摘要翻译：发光装置包括：基板; 设置在所述基板上并具有第一表面的第一半导体层; 形成在所述第一半导体层中的粗糙结构，所述粗糙结构包括在其中形成的多孔结构，并且所述多孔结构的一部分具有暴露在所述第一半导体层的第一表面上的开口; 以及形成在第一半导体层上的有源层。

10. 发明授权

US11437547B2 Electrode structure of light emitting device 有权
公开(公告)号：US11437547B2
公开(公告)日：2022-09-06
申请号：US17102171
申请日：2020-11-23
申请人： EPISTAR CORPORATION
发明人： De-Shan Kuo , Ting-Chia Ko , Chun-Hsiang Tu , Po-Shun Chiu
IPC分类号： H01L29/06 , H01L33/42 , H01L33/40 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/60 , H01L33/62 , H01L33/22 , H01L33/00
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

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