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    • 5. 发明授权
    • Light-emitting device
    • 发光装置
    • US09515225B2
    • 2016-12-06
    • US14953876
    • 2015-11-30
    • Epistar Corporation
    • Ching-Huai NiChia-Liang HsuYi-Ming Chen
    • H01L31/12H01L27/32H01L33/10H01L33/24H01L33/38H01L33/30H01L33/32H01L33/22
    • H01L33/382H01L33/22H01L33/24H01L33/30H01L33/32H01L2933/0016
    • A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.
    • 本公开的实施例的发光器件包括衬底; 包括第一类型半导体层,第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠,其中第一类型半导体层包括非平面粗糙表面; 形成在所述基板和所述半导体叠层之间的接合层; 以及多个凹部,每个凹部包括比所述非平面粗糙表面低的底面; 以及物理地埋置在第一类型半导体层中的多个埋置电极,其中多个埋入电极分别形成在多个凹槽中,并且多个埋入电极中的一个包括比第一类型半导体的非平面粗糙化表面高的上表面 层。