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1. 发明授权

US07741638B2 Control layer for a nanoscale electronic switching device 有权
标题翻译：用于纳米级电子开关器件的控制层
公开(公告)号：US07741638B2
公开(公告)日：2010-06-22
申请号：US11287113
申请日：2005-11-23
申请人： Duncan Stewart , Douglas Ohlberg , R. Stanley Williams , Philip J. Kuekes
发明人： Duncan Stewart , Douglas Ohlberg , R. Stanley Williams , Philip J. Kuekes
IPC分类号： H01L23/58
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
摘要翻译：公开了一种用于纳米级电子开关器件的结的控制层。控制层包括与纳米级切换装置中的连接层和至少一个电极化学相容的材料。控制层适于在装置的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

2. 发明授权

US08502198B2 Switching device and methods for controlling electron tunneling therein 有权
标题翻译：用于控制电子隧穿的开关装置和方法
公开(公告)号：US08502198B2
公开(公告)日：2013-08-06
申请号：US11414578
申请日：2006-04-28
申请人： R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
发明人： R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
IPC分类号： H01L29/08
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/77 , H01L51/0591
摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
摘要翻译：开关装置包括至少一个底部电极和至少一个顶部电极。顶部电极以非零角度穿过底部电极，从而形成结。在底电极或顶电极中的至少一个上建立金属氧化物层。在连接处建立了包括有机分子单层和水分子源的分子层。在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

3. 发明申请

US20110221027A1 Using Alloy Electrodes to Dope Memristors 有权
标题翻译：使用合金电极将忆阻器
公开(公告)号：US20110221027A1
公开(公告)日：2011-09-15
申请号：US13130801
申请日：2009-01-26
申请人： Nathaniel J. Quitoriano , Douglas Ohlberg , Philip J. Kuekes , Jianhua Yang
发明人： Nathaniel J. Quitoriano , Douglas Ohlberg , Philip J. Kuekes , Jianhua Yang
IPC分类号： H01L29/47 , B82Y99/00
CPC分类号： H01L27/1021 , B82Y10/00 , H01L21/26506 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , Y10S977/762
摘要： Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.
摘要翻译：本发明的各种实施例直接涉及纳米级，可重构的忆阻器装置。一方面，忆阻器件包括电极（301,303）和合金电极（502,602）。该装置还包括夹在电极和合金电极之间的有源区（510,610）。合金电极在与合金电极相邻的有源区的子区域中形成掺杂剂。可以通过有选择地将掺杂剂定位在有源区域内来控制有源区，以控制电极和合金电极之间的载流子的流动。

4. 发明授权

US08878342B2 Using alloy electrodes to dope memristors 有权
标题翻译：使用合金电极来吸收忆阻器
公开(公告)号：US08878342B2
公开(公告)日：2014-11-04
申请号：US13130801
申请日：2009-01-26
申请人： Nathaniel J. Quitoriano , Douglas Ohlberg , Philip J. Kuekes , Jianhua Yang
发明人： Nathaniel J. Quitoriano , Douglas Ohlberg , Philip J. Kuekes , Jianhua Yang
IPC分类号： H01L29/02 , H01L29/00 , H01L21/20 , G11C11/00 , H01L27/24 , H01L45/00 , H01L27/102 , B82Y10/00 , H01L21/265
CPC分类号： H01L27/1021 , B82Y10/00 , H01L21/26506 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , Y10S977/762
摘要： Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode (301,303) and an alloy electrode (502,602). The device also includes an active region (510,610) sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.
摘要翻译：本发明的各种实施例直接涉及纳米级，可重构的忆阻器装置。一方面，忆阻器件包括电极（301,303）和合金电极（502,602）。该装置还包括夹在电极和合金电极之间的有源区（510,610）。合金电极在与合金电极相邻的有源区的子区域中形成掺杂剂。可以通过有选择地将掺杂剂定位在有源区域内来控制有源区，以控制电极和合金电极之间的载流子的流动。

5. 发明申请

US20070252128A1 Switching device and methods for controlling electron tunneling therein 有权
标题翻译：用于控制电子隧穿的开关装置和方法
公开(公告)号：US20070252128A1
公开(公告)日：2007-11-01
申请号：US11414578
申请日：2006-04-28
申请人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
发明人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/77 , H01L51/0591
摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
摘要翻译：开关装置包括至少一个底部电极和至少一个顶部电极。顶部电极以非零角度穿过底部电极，从而形成结。在底电极或顶电极中的至少一个上建立金属氧化物层。在连接处建立了包括有机分子单层和水分子源的分子层。在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

6. 发明申请

US20050032203A1 Custom electrodes for molecular memory and logic devices 审中-公开
公开(公告)号：US20050032203A1
公开(公告)日：2005-02-10
申请号：US10930398
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00 , C12M1/34
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

7. 发明申请

US20070117256A1 Control layer for a nanoscale electronic switching device 有权
标题翻译：用于纳米级电子开关器件的控制层
公开(公告)号：US20070117256A1
公开(公告)日：2007-05-24
申请号：US11287113
申请日：2005-11-23
申请人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
发明人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
IPC分类号： H01L29/02 , H01L51/40
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
摘要翻译：公开了一种用于纳米级电子开关器件的结的控制层。控制层包括与纳米级切换装置中的连接层和至少一个电极化学相容的材料。控制层适于在装置的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

8. 发明申请

US20050164412A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050164412A1
公开(公告)日：2005-07-28
申请号：US10995608
申请日：2004-11-22
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.
摘要翻译：一种用于调整形成在具有第一表面粗糙度的基底上的导电层的暴露的非平面层状表面的至少一部分以提供具有第二表面粗糙度的暴露表面的方法。该方法包括：在基板上形成导电层; 以及在等离子体中定制导电层的暴露表面的至少部分，以至少平滑导电层的暴露表面，由此第二表面粗糙度基本上与第一表面粗糙度相同。

9. 发明授权

US06855647B2 Custom electrodes for molecular memory and logic devices 失效
公开(公告)号：US06855647B2
公开(公告)日：2005-02-15
申请号：US10405294
申请日：2003-04-02
申请人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/26
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

10. 发明申请

US20050026427A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050026427A1
公开(公告)日：2005-02-03
申请号：US10930062
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
摘要翻译：提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。定制的表面对于SAM沉积是更有用的。金属性质使分子具有高导电性。阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。

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