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1. 发明授权

US06187603B1 Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material 失效
标题翻译：使用分布式颗粒来限定栅极开口的门控电子发射器件的制造，通常结合多余的发射极材料的剥离
公开(公告)号：US06187603B1
公开(公告)日：2001-02-13
申请号：US08660536
申请日：1996-06-07
申请人： Duane A. Haven , N. Johan Knall , Paul N. Ludwig , John M. Macaulay
发明人： Duane A. Haven , N. Johan Knall , Paul N. Ludwig , John M. Macaulay
IPC分类号： H01L2100
CPC分类号： H01J9/025 , H01J2329/00
摘要： An electron-emitting device is fabricated by a process in which particles (46) are distributed over an initial structure. The particles are utilized in defining primary openings (52, 64, or 78) that extend through a primary layer (50A, 62A, or 72) provided over a gate layer (48A, 60A, or 60B) formed over an insulating layer (44) and in defining corresponding gate openings (54, 66, or 80) that extend through the gate layer. The insulating layer is etched through the primary and gate openings to form corresponding dielectric openings (56 or 68) through the insulating layer down to a lower non-insulating region (42). Electron-emissive elements (58A or 70A) are formed over the lower non-insulating region so that each electron-emissive element is at least partially situated in one dielectric opening. Formation of the electron-emissive elements, typically in the shape of cones, normally entails depositing emitter material over the primary layer, through the primary and gate openings, and into the dielectric openings and then removing the primary layer so as to remove any emitter material accumulated over the primary layer.
摘要翻译：通过其中颗粒（46）分布在初始结构上的过程制造电子发射器件。这些颗粒用于限定主开口（52,64或78），其延伸穿过形成在绝缘层（44）上的栅极层（48A，60A或60B）上的初级层（50A，62A或72））并且限定延伸穿过栅极层的对应的栅极开口（54,66或80）。通过初级和栅极开口蚀刻绝缘层，以形成穿过绝缘层的相应电介质开口（56或68），直到下部非绝缘区域（42）。电子发射元件（58A或70A）形成在下部非绝缘区域上，使得每个电子发射元件至少部分地位于一个电介质开口中。电子发射元件的形成（通常为锥形）通常需要在初级层上通过初级和栅极开口沉积发射极材料，并将其沉积到电介质开口中，然后去除主层以除去任何发射体材料累积在主层上。

2. 发明授权

US6019658A Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements 有权
标题翻译：使用分布式颗粒来限定栅极开口的门控电子发射器件的制造，通常与间隔物材料组合以控制栅极层和电子发射元件之间的间隔
公开(公告)号：US6019658A
公开(公告)日：2000-02-01
申请号：US151924
申请日：1998-09-11
申请人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
发明人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2329/00
摘要： A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (102A, 110A, 124A, 140, or 150B). Dielectric openings (80, 114, 128, 144, or 154) are formed through the insulating layer. The dielectric openings can be created before or after creating the spacers. In either case, emitter material in introduced into either the full dielectric openings, or into the portions of the dielectric openings not covered with spacer material, to form electron-emissive elements (106B, 116B, 130A, 146A, or 156B) typically filamentary in shape.
摘要翻译：具有较低非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的门控电子发射器通过以下工艺制造，其中颗粒（46）分布在绝缘层上，栅极层，设置在栅极层上的主层（50A，62A或72），设置在主层上的另一层（74）或图案转移层（182）。这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。间隔材料沿栅极开口的边缘设置以形成间隔物（102A，110A，124A，140或150B）。通过绝缘层形成电介质开口（80,114,128,144或154）。可以在产生间隔物之前或之后产生电介质开口。在任一种情况下，发射体材料被引入到完整电介质开口中，或者被引入未被间隔物材料覆盖的电介质开口部分，以形成电子发射元件（106B，116B，130A，146A或156B），通常为形状。

3. 发明授权

US5865659A Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements 失效
标题翻译：使用分布式颗粒来限定栅极开口并利用间隔物材料来控制栅极层和电子发射元件之间的间隔的门控电子发射器件的制造
公开(公告)号：US5865659A
公开(公告)日：1999-02-02
申请号：US660538
申请日：1996-06-07
申请人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
发明人： Paul N. Ludwig , Duane A. Haven , John M. Macaulay , Christopher J. Spindt , James M. Cleeves , N. Johan Knall
IPC分类号： H01J9/02 , H01J1/30
CPC分类号： H01J9/025 , H01J2329/00
摘要： A gated electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. Spacer material is provided along the edges of the gate openings to form spacers (110A, 124A, 140, or 150B) but leave corresponding apertures (112A, 126A, 142, or 152) through the spacer material. The insulating layer is etched through the apertures to form dielectric openings (114, 128, 144, or 154) through the insulating layer. Emitter material is introduced into the dielectric openings to form electron-emissive elements (116B, 130A, 146A, or 156B) typically filamentary in shape.
摘要翻译：具有较低非绝缘发射极区域（42），上覆绝缘层（44）和栅极层（48A，60A，60B，120A或180A / 184）的门控电子发射器通过以下工艺制造，其中颗粒（46）分布在绝缘层上，栅极层，设置在栅极层上的主层（50A，62A或72），设置在主层上的另一层（74）或图案转移层（182）。这些颗粒用于通过栅极层限定栅极开口（54,66,80,122或186/188）。隔板材料沿栅极开口的边缘设置以形成间隔物（110A，124A，140或150B），但通过间隔物料留下相应的孔（112A，126A，142或152）。通过孔蚀刻绝缘层，以形成通过绝缘层的电介质开口（114,128,144或154）。将发射体材料引入电介质开口以形成通常为丝状形状的电子发射元件（116B，130A，146A或156B）。

4. 发明授权

US5893967A Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device 失效
标题翻译：在电子发射器件中阻抗辅助电化学去除材料，特别是过量的发射极材料
公开(公告)号：US5893967A
公开(公告)日：1999-04-13
申请号：US884700
申请日：1997-06-30
申请人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
发明人： N. Johan Knall , Christopher J. Spindt , Gabriela S. Chakarova , Duane A. Haven , John M. Macaulay , Roger W. Barton , Maria S. Nikolova , Peter C. Searson
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/00
CPC分类号： H01J9/025
摘要： An impedance-assisted electrochemical method is employed for selectively removing certain material from a structure without significantly electrochemically removing certain other material of the same chemical type as the removed material.
摘要翻译：采用阻抗辅助电化学方法从结构中选择性地去除某些材料，而不用显着地电化学去除与去除的材料相同的化学类型的某些其它材料。

5. 发明授权

US6027632A Multi-step removal of excess emitter material in fabricating electron-emitting device 失效
标题翻译：在制造电子发射器件时多步去除过量的发射极材料
公开(公告)号：US6027632A
公开(公告)日：2000-02-22
申请号：US904967
申请日：1997-07-30
申请人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
发明人： N. Johan Knall , Duane A. Haven , Roger W. Barton , William H. Creel , Christopher J. Spindt
IPC分类号： B81C1/00 , C25F3/14 , H01J9/02 , C25F3/02
CPC分类号： H01J9/025
摘要： Excess emitter material (52B) is removed in multiple steps during the fabrication of an electron-emitting device. A structure is initially provided in which a dielectric layer (44) overlies a non-insulating region (42), control electrodes (80 or 46/80) overlie the dielectric layer, openings (48/50) extend through the control electrodes and dielectric layer, electron-emissive elements (52A) formed with emitter material are situated in the openings, and an excess layer (52B) of the emitter material overlies the control electrodes and the dielectric layer. Portions of the excess emitter material overlying the dielectric layer in the spaces between the control electrodes are initially removed, preferably with etchant that directly attacks the emitter material. Portions (52C) of the excess emitter material overlying the control electrodes above the electron-emissive elements are subsequently removed to expose the electron-emissive elements.
摘要翻译：在制造电子发射器件期间，多个发射极材料（52B）被多个步骤去除。首先提供一种结构，其中介电层（44）覆盖在非绝缘区域（42）上，控制电极（80或46/80）覆盖在电介质层上，开口（48/50）延伸穿过控制电极和电介质由发射体材料形成的层，电子发射元件（52A）位于开口中，发射极材料的过剩层（52B）覆盖在控制电极和电介质层上。最初除去在控制电极之间的空间中覆盖电介质层的多余发射体材料的部分，最好用直接攻击发射极材料的蚀刻剂。随后去除覆盖电子发射元件上方的控制电极的过量发射体材料的部分（52℃）以露出电子发射元件。

6. 发明授权

US6013986A Electron-emitting device having multi-layer resistor 失效
标题翻译：具有多层电阻器的电子发射器件
公开(公告)号：US6013986A
公开(公告)日：2000-01-11
申请号：US884702
申请日：1997-06-30
申请人： N. Johan Knall , Duane A. Haven , Swayambu Ramani
发明人： N. Johan Knall , Duane A. Haven , Swayambu Ramani
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J29/04 , H01J31/12 , H01J63/04
CPC分类号： H01J3/022 , H01J2201/319 , H01J2329/00
摘要： An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.
摘要翻译：电子发射器件采用多层电阻（46）。电阻器的下层（48）覆盖发射电极（42）。一组电子发射元件（54）覆盖电阻器的上层（50）。每个电阻层从每个电子发射元件下方的位置连续延伸到彼此电子发射元件下方的位置。两个电阻层的化学成分不同。上电阻层通常由金属陶瓷形成。下电阻层通常由硅 - 碳化合物形成。

7. 发明授权

US6013974A Electron-emitting device having focus coating that extends partway into focus openings 失效
标题翻译：具有聚焦涂层的电子发射器件，其一部分延伸到聚焦开口中
公开(公告)号：US6013974A
公开(公告)日：2000-01-11
申请号：US866554
申请日：1997-05-30
申请人： Duane A. Haven , Christopher J. Spindt , N. Johan Knall
发明人： Duane A. Haven , Christopher J. Spindt , N. Johan Knall
IPC分类号： H01J3/02 , H01J1/30 , H01J19/24
CPC分类号： H01J3/022
摘要： An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A) and a focus coating (39 or 39A) that penetrates partway into a focus opening (40) extending through the base focusing structure above an electron-emissive element (24). The focus coating is normally of lower resistivity than the base focusing structure and thereby provides most of the focus control over electrons emitted by the electron-emissive element. The focus coating is typically formed by an angled deposition technique.
摘要翻译：电子发射器件包含形成有基底聚焦结构（38或38A）和聚焦涂层（39或39A）的电子聚焦系统（37或37A），所述聚焦涂层（39或39A）穿透基部聚焦的聚焦开口（40）结构在电子发射元件（24）之上。聚焦涂层通常具有比基底聚焦结构更低的电阻率，从而提供对由电子发射元件发射的电子的大部分焦点控制。聚焦涂层通常由成角度的沉积技术形成。

8. 发明授权

US5920151A Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor 失效
标题翻译：具有聚焦涂层的电子发射器件的结构和制造通过下面的访问导体接触
公开(公告)号：US5920151A
公开(公告)日：1999-07-06
申请号：US866151
申请日：1997-05-30
申请人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
发明人： Roger W. Barton , Stephanie J. Oberg , N. Johan Knall , Christopher J. Spindt , Duane A. Haven
IPC分类号： H01J3/02 , H01J19/38
CPC分类号： H01J3/022
摘要： An electron-emitting device contains an electron focusing system (37 or 37A) formed with a base focusing structure (38 or 38A), a focus coating (39 or 39A), and an access conductor (106 or 116). The focus coating overlies the base focusing structure and extends into a focus opening (40). The access conductor is electrically coupled to the lower surface of the focus coating. A potential for controlling the focusing of electrons that travel through the focus opening is provided to the focus coating via the access conductor. The focus coating is typically formed by an angled deposition technique.
摘要翻译：电子发射器件包含形成有基底聚焦结构（38或38A），聚焦涂层（39或39A）和接触导体（106或116）的电子聚焦系统（37或37A）。聚焦涂层覆盖基部聚焦结构并延伸到聚焦开口（40）中。接入导体电耦合到聚焦涂层的下表面。通过接入导体将聚焦涂层的焦距设置在聚焦涂层上。聚焦涂层通常由成角度的沉积技术形成。

9. 发明授权

US07245000B2 Electrically isolated pillars in active devices 有权
标题翻译：有源器件中电隔离柱
公开(公告)号：US07245000B2
公开(公告)日：2007-07-17
申请号：US10681504
申请日：2003-10-07
申请人： Michael A. Vyvoda , Manish Bhatia , James M. Cleeves , N. Johan Knall
发明人： Michael A. Vyvoda , Manish Bhatia , James M. Cleeves , N. Johan Knall
IPC分类号： H01L27/103
CPC分类号： H01L27/1021
摘要： A monolithic three dimensional memory array is described. The memory array comprises a first set of strips including a first terminal; a second set of strips including a second terminal; a third set of strips including a third terminal; a first pillar having at least one side wall with a slightly positive slope, said pillar disposed between and connecting said first and second sets of strips, and including a first P doped silicon region, a first N doped silicon region and a first insulating region; a second pillar having at least one side wall with a slightly positive slope, said pillar disposed between and connecting said second and third sets of strips, and including a second P doped silicon region, a second N doped silicon region and a second insulating region; wherein each of the pillars is substantially free of stringers.
摘要翻译：描述了单片三维存储器阵列。存储器阵列包括第一组条带，包括第一端子; 第二组条带，包括第二端子; 第三组条带，包括第三端子; 具有至少一个具有稍微正斜率的侧壁的第一柱，所述柱设置在所述第一和第二组条之间并连接所述第一和第二组条，并且包括第一P掺杂硅区，第一N掺杂硅区和第一绝缘区; 具有至少一个具有稍微正斜率的侧壁的第二柱，所述柱设置在所述第二和第三组条之间并连接所述第二和第三组条，并包括第二P掺杂硅区，第二N掺杂硅区和第二绝缘区; 其中每个支柱基本上没有桁条。

10. 发明授权

US06822903B2 Apparatus and method for disturb-free programming of passive element memory cells 有权
标题翻译：无源元件存储单元无干扰编程的装置和方法
公开(公告)号：US06822903B2
公开(公告)日：2004-11-23
申请号：US10403488
申请日：2003-03-31
申请人： Roy E. Scheuerlein , N. Johan Knall
发明人： Roy E. Scheuerlein , N. Johan Knall
IPC分类号： G11C1134
CPC分类号： G11C13/0014 , B82Y10/00 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/72
摘要： In a passive element memory array, such as a rail stack array having a continuous semiconductor region along one or both of the array lines, programming a memory cell may disturb nearby memory cells as result of a leakage path along the array line from the selected cell to the adjacent cell. This effect may be reduced substantially by changing the relative timing of the programming pulses applied to the array lines for the selected memory cell, even if the voltages are unchanged. In an exemplary three-dimensional antifuse memory array, a positive-going programming pulse applied to the anode region of the memory cell preferably is timed to lie within the time that a more lightly-doped cathode region is pulsed low.
摘要翻译：在无源元件存储器阵列中，例如沿着阵列线中的一个或两个具有连续半导体区域的轨道堆叠阵列，对存储器单元的编程可能由于沿着阵列线从所选择的单元的泄漏路径而扰乱附近的存储器单元到相邻的单元格。即使电压不变，也可以通过改变施加到所选择的存储单元的阵列线的编程脉冲的相对定时来大大减小该效果。在示例性三维反熔丝存储器阵列中，施加到存储单元的阳极区域的正向编程脉冲优选地被定时在更轻掺杂的阴极区域被脉冲为低的时间内。

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