专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6091021A Silicon cells made by self-aligned selective-emitter plasma-etchback process 有权
标题翻译：通过自对准选择发射体等离子体回蚀法制造的硅电池
公开(公告)号：US6091021A
公开(公告)日：2000-07-18
申请号：US191319
申请日：1998-11-13
申请人： Douglas S. Ruby , William K. Schubert , James M. Gee , Saleem H. Zaidi
发明人： Douglas S. Ruby , William K. Schubert , James M. Gee , Saleem H. Zaidi
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/00
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： Photovoltaic cells and methods for making them are disclosed wherein the metallized grids of the cells are used to mask portions of cell emitter regions to allow selective etching of phosphorus-doped emitter regions. The preferred etchant is SF.sub.6 or a combination of SF.sub.6 and O.sub.2. This self-aligned selective etching allows for enhanced blue response (versus cells with uniform heavy doping of the emitter) while preserving heavier doping in the region beneath the gridlines needed for low contact resistance. Embodiments are disclosed for making cells with or without textured surfaces. Optional steps include plasma hydrogenation and PECVD nitride deposition, each of which are suited to customized applications for requirements of given cells to be manufactured. The techniques disclosed could replace expensive and difficult alignment methodologies used to obtain selectively etched emitters, and they may be easily integrated with existing plasma processing methods and techniques of the invention may be accomplished in a single plasma-processing chamber.
摘要翻译：公开了光伏电池及其制造方法，其中使用电池的金属化网格来掩蔽电池发射极区域的部分，以允许选择性地蚀刻磷掺杂的发射极区域。优选的蚀刻剂是SF 6或SF 6和O 2的组合。这种自对准选择性蚀刻允许增强的蓝色响应（相对于具有均匀的重掺杂发射体的单元），同时在低接触电阻所需的网格线下方的区域中保持较重的掺杂。公开了用于制造具有或不具有纹理表面的单元的实施例。可选步骤包括等离子体氢化和PECVD氮化物沉积，其中每一种适合于要制造的给定电池的要求的定制应用。所公开的技术可以代替用于获得选择性蚀刻的发射体的昂贵和困难的对准方法，并且它们可以容易地与现有等离子体处理方法集成，并且本发明的技术可以在单个等离子体处理室中实现。

2. 发明授权

US06329296B1 Metal catalyst technique for texturing silicon solar cells 有权
标题翻译：用于纹理硅太阳能电池的金属催化剂技术
公开(公告)号：US06329296B1
公开(公告)日：2001-12-11
申请号：US09634905
申请日：2000-08-09
申请人： Douglas S. Ruby , Saleem H. Zaidi
发明人： Douglas S. Ruby , Saleem H. Zaidi
IPC分类号： H01L2100
CPC分类号： H01L21/31111 , H01L31/02363 , Y02E10/50
摘要： Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.
摘要翻译：纹理硅太阳能电池及其制造技术利用金属源催化随机分布的表面特征如纳米锥体和柱状结构的形成。这些结构的尺寸小于入射光的波长，从而形成高度有效的抗反射表面。根据本发明，存在于反应离子蚀刻室中的金属源允许将杂质（例如金属颗粒）引入到反应离子蚀刻等离子体中，导致微掩模沉积在待蚀刻的基底的表面上。公开了单独的实施例，包括其中金属源包括相对于要织构的表面有策略地定位的一个或多个金属涂覆的基底的另一个，其中反应室的壁用金属催化剂的薄涂层进行预处理材料。

3. 发明授权

US06858462B2 Enhanced light absorption of solar cells and photodetectors by diffraction 有权
$Enhanced light absorption of solar cells and photodetectors by diffraction$
标题翻译：通过衍射增强太阳能电池和光电探测器的光吸收
公开(公告)号：US06858462B2
公开(公告)日：2005-02-22
申请号：US09834308
申请日：2001-04-11
申请人： Saleem H. Zaidi , James M. Gee
发明人： Saleem H. Zaidi , James M. Gee
IPC分类号： H01L31/0232 , H01L31/0236 , H01L21/02
CPC分类号： H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are shown to improve performance of solar cells. Surface reflection can be tailored for either broadband, or narrow-band spectral absorption. Enhanced absorption is achieved by efficient optical coupling into obliquely propagating transmitted diffraction orders. Subwavelength one-dimensional structures are designed for polarization-dependent, wavelength-selective absorption in solar cells and photodetectors, while two-dimensional structures are designed for polarization-independent, wavelength-selective absorption therein. Suitable one and two-dimensional subwavelength periodic structures can also be designed for broadband spectral absorption in solar cells and photodetectors. If reactive ion etching (RIE) processes are used to form the grating, RIE-induced surface damage in subwavelength structures can be repaired by forming junctions using ion implantation methods. RIE-induced surface damage can also be removed by post RIE wet-chemical etching treatments.
摘要翻译：描述了通过衍射增强太阳能电池和光电探测器的光吸收。三角形，矩形和闪耀的亚波长周期结构被显示以改善太阳能电池的性能。表面反射可以适用于宽带或窄带光谱吸收。通过有效的光耦合到倾斜传播的衍射级中实现增强的吸收。亚波长一维结构被设计用于太阳能电池和光电探测器中的偏振相关的波长选择性吸收，而二维结构被设计用于其中的偏振无关的波长选择吸收。也可以为太阳能电池和光电探测器中的宽带光谱吸收设计合适的一维和二维亚波长周期结构。如果使用反应离子蚀刻（RIE）工艺来形成光栅，可以通过使用离子注入方法形成结来修复亚波长结构中的RIE诱导的表面损伤。 RIE诱导的表面损伤也可以通过RIE湿法化学蚀刻处理来去除。

4. 发明授权

US07109517B2 Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors 失效
标题翻译：在薄膜太阳能电池和光电探测器中增强光吸收和辐射耐受性的方法
公开(公告)号：US07109517B2
公开(公告)日：2006-09-19
申请号：US10298694
申请日：2002-11-15
申请人： Saleem H. Zaidi
发明人： Saleem H. Zaidi
IPC分类号： H01L29/06
CPC分类号： H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.
摘要翻译：亚波长随机和周期性微观结构用于增强薄膜和光电探测器的电离辐射损伤的光吸收和耐受性。衍射前表面微观结构将光散射到有效捕获在光伏材料体积内的倾斜传播的较高衍射级。对于通过大部分材料蚀刻的亚波长周期微观结构，增强的吸收是由于垂直于其表面的波导效应。本发明的结构的增强的辐射耐受性是由于紧密间隔的垂直侧壁接合部，在它们失去复合之前捕获大部分深深产生的电子 - 空穴对。即使在辐射诱导的降解之后，这些垂直侧壁结的分离也远小于少数载流子扩散长度。本发明的结构的有效的光捕获补偿了光电材料的显着去除，并大大降低了其对于空间应用的重量。

5. 发明授权

US06835246B2 Nanostructures for hetero-expitaxial growth on silicon substrates 失效
标题翻译：用于硅衬底上异质外延生长的纳米结构
公开(公告)号：US06835246B2
公开(公告)日：2004-12-28
申请号：US10299568
申请日：2002-11-18
申请人： Saleem H. Zaidi
发明人： Saleem H. Zaidi
IPC分类号： C30B2504
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/0265 , Y10T428/12528 , Y10T428/12667 , Y10T428/12681
摘要： Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for gettering defects and for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth thereon, thereby leading to relatively defect-free, heteroepitaxial films of chosen thicknesses. The as-grown epilayers or completed electronic and optoelectronic devices can be bonded to a second substrate such as glass, or plastic following separation thereof from the substrate on which they were formed using preferential etching of a readily detachable, nanoporous silicon or silicon dioxide layer introduced between the generated structures and the substrate.
摘要翻译：期望在硅和其它基板上产生的选定的微观和纳米尺度，一维和二维周期性和随机结构作为顺应性薄膜，用于吸收缺陷并且在异质外延生长期间适应晶格和热膨胀错配，从而导致到具有所选厚度的相对缺陷的异质外延膜。经生长的外延层或完成的电子和光电子器件可以与第二基底（例如玻璃或塑料）粘合，之后将其与其上形成的基底分离，使用易于分离的纳米多孔硅或二氧化硅层引入在所生成的结构和衬底之间。

6. 发明授权

US06233044B1 Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns 有权
标题翻译：用于整合光学和干涉光刻以产生复杂图案的方法和装置
公开(公告)号：US06233044B1
公开(公告)日：2001-05-15
申请号：US09273399
申请日：1999-03-22
申请人： Steven R. J. Brueck , Xiaolan Chen , Andrew Frauenglass , Saleem H. Zaidi , Janusz Wilczynski
发明人： Steven R. J. Brueck , Xiaolan Chen , Andrew Frauenglass , Saleem H. Zaidi , Janusz Wilczynski
IPC分类号： G03B2754
CPC分类号： G03F7/70108 , G03F7/2022 , G03F7/70241 , G03F7/70308 , G03F7/70408 , G03F7/7045
摘要： The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.
摘要翻译：本发明提供用于通过空间频率分量在半导体晶片上定义单个结构的方法和装置，由此通过光学光刻获得一些空间频率分量，而通过干涉光刻技术导出一些空间频率分量。干涉光刻成像高频分量，而光刻成像低频分量。光学收集许多空间频率，干涉测量将空间频率移动到高空间频率。因此，由于掩模不需要提供高空间频率，所以掩模被配置为仅产生低频分量，从而允许制造具有较大结构的更简单的掩模。这些方法和设备有助于在单次曝光中以比目前可用的已知光刻单独的分辨率更高的分辨率编写更复杂的重复和非重复图案。

7. 发明授权

US5705321A Method for manufacture of quantum sized periodic structures in Si materials 失效
标题翻译：在Si材料中制造量子尺寸周期结构的方法
公开(公告)号：US5705321A
公开(公告)日：1998-01-06
申请号：US490101
申请日：1995-06-06
申请人： Steven R. J. Brueck , An-Shyang Chu , Bruce L. Draper , Saleem H. Zaidi
发明人： Steven R. J. Brueck , An-Shyang Chu , Bruce L. Draper , Saleem H. Zaidi
IPC分类号： G03F7/00 , G03F7/20 , H01L21/027 , H01L21/306 , H01L21/308 , G03C5/00
CPC分类号： B82Y10/00 , G03F7/0035 , G03F7/2022 , G03F7/70408 , G03F7/70466 , H01L21/0274 , H01L21/30608 , H01L21/3088
摘要： Multiple-exposure fine-line interferometric lithography, combined with conventional optical lithography, is used in a sequence of steps to define arrays of complex, nm-scale structures in a photoresist layer. Nonlinearities in the develop, mask etch, and Si etch processes are used to modify the characteristics and further reduce the scale of the structures. Local curvature dependent oxidation provides an additional flexibility. Electrical contact to the quantum structures is achieved. Uniform arrays of Si structures, including quantum wires and quantum dots, are produced that have structure dimensions on the scale of electronic wave functions. Applications include enhanced optical interactions with quantum structured Si, including optical emission and lasing and novel electronic devices based on the fundamentally altered electronic properties of these materials. All of the process sequences involve parallel processing steps to make large fields of these quantum structures. The processes are, further, consistent with modern micro lithographic manufacturing practice, promising inexpensive and large-scale manufacture.
摘要翻译：多次曝光细线干涉光刻技术与传统的光刻技术相结合，被用于一系列步骤，以确定光致抗蚀剂层中复杂的nm尺度结构的阵列。开发，掩模蚀刻和Si蚀刻工艺中的非线性被用于改变特性并进一步减小结构的尺度。局部曲率依赖氧化提供了额外的灵活性。实现与量子结构的电接触。产生了包括量子线和量子点的Si结构的均匀阵列，其具有电子波函数规模的结构尺寸。应用包括与量子结构Si的增强的光学相互作用，包括光发射和激光，以及基于这些材料的基本改变的电子特性的新型电子器件。所有的过程序列都涉及到并行处理步骤，以形成这些量子结构的大场。这些过程进一步与现代微型平版印刷制造实践一致，有希望的廉价和大规模制造。

8. 发明申请

US20070084505A1 Thin-film solar cells and photodetectors having enhanced optical absorption and radiation tolerance 审中-公开
标题翻译：具有增强的光吸收和辐射耐受性的薄膜太阳能电池和光电探测器
公开(公告)号：US20070084505A1
公开(公告)日：2007-04-19
申请号：US11185243
申请日：2005-07-19
申请人： Saleem H. Zaidi
发明人： Saleem H. Zaidi
IPC分类号： H01L31/00
CPC分类号： H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.
摘要翻译：亚波长随机和周期性微观结构用于增强薄膜和光电探测器的电离辐射损伤的光吸收和耐受性。衍射前表面微观结构将光散射到有效捕获在光伏材料体积内的倾斜传播的较高衍射级。对于通过大部分材料蚀刻的亚波长周期微观结构，增强的吸收是由于垂直于其表面的波导效应。本发明的结构的增强的辐射耐受性是由于紧密间隔的垂直侧壁接合部，在它们失去复合之前捕获大部分深深产生的电子 - 空穴对。即使在辐射诱导的降解之后，这些垂直侧壁结的分离也远小于少数载流子扩散长度。本发明的结构的有效的光捕获补偿了光电材料的显着去除，并大大降低了其对于空间应用的重量。

9. 发明授权

US06596377B1 Thin film product and method of forming 有权
标题翻译：薄膜制品及成型方法
公开(公告)号：US06596377B1
公开(公告)日：2003-07-22
申请号：US09535732
申请日：2000-03-27
申请人： Stephen D. Hersee , David Zubia , Steven R. J. Brueck , Saleem H. Zaidi
发明人： Stephen D. Hersee , David Zubia , Steven R. J. Brueck , Saleem H. Zaidi
IPC分类号： C30B2502
CPC分类号： C30B25/02 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/605 , Y10T428/24802 , Y10T428/249967
摘要： A new and useful technique for growing an epilayer onto a substrate is provided. An epilayer is grown on a substrate by (a) providing a patterned substrate comprising a plurality of isolated nanoscale nucleation sites, and (b) growing an epilayer selectively on the nanoscale nucleation sites, in a manner which localizes strain at the substrate-epilayer interface, and enables strain to reduce as the thickness of the epilayer increases.
摘要翻译：提供了一种用于在衬底上生长外延层的新技术。通过（a）提供包含多个分离的纳米级成核位点的图案化衬底，并且（b）以在衬底 - 外延层界面上定位应变的方式在纳米尺度成核位置选择性地生长外延层，在衬底上生长外延层，并且随着外延层的厚度增加，应变可以减小。

10. 发明授权

US6042998A Method and apparatus for extending spatial frequencies in photolithography images 失效
标题翻译：用于在光刻图像中扩展空间频率的方法和装置
公开(公告)号：US6042998A
公开(公告)日：2000-03-28
申请号：US932428
申请日：1997-09-17
申请人： Steven R. J. Brueck , Saleem H. Zaidi
发明人： Steven R. J. Brueck , Saleem H. Zaidi
IPC分类号： G02B6/122 , G03F7/00 , G03F7/20 , G03C5/00
CPC分类号： B82Y20/00 , G02B6/1225 , G03F7/0035 , G03F7/2022 , G03F7/70325 , G03F7/70408 , G03F7/70466
摘要： The present invention extends the available spatial frequency content of an image through the use of a method and apparatus for combining nonlinear functions of intensity to form three dimensional patterns with spatial frequencies that are not present in either of the individual exposures and that are beyond 2/.lambda. in all three spatial directions. The resulting pattern has spatial frequency content beyond the limits set by optical propagation of spatial frequencies limited to 2/.lambda. (e.g. pitch reduction from .about..lambda./2 to at least .about..lambda./4). The extension of spatial frequencies preferably extends the use of currently existing photolithography capabilities, thereby resulting in a significant economic impact. Multiplying the spatial frequency of lithographically defined structures suitably allows for substantial improvements in, inter alia, crystal growth, quantum structure growth and fabrication, flux pinning sites for high-T.sub.c superconductors, form birefringent materials, reflective optical coatings, photonic bandgap, electronics, optical/magnetic storage media, arrays of field emitters, DRAM (Dynamic Random Access Memory) capacitors and in other applications requiring large areas of nm-scale features.
摘要翻译：本发明通过使用用于组合强度的非线性函数的方法和装置来扩展图像的可用空间频率内容，以形成具有不存在于单独曝光中的空间频率并且超过2 / lambda在所有三个空间方向。所得到的图案具有超过限于2 /λ的空间频率的光学传播设置的限制的空间频率内容（例如，从DIFFERENCEλ/ 2到至少差分λ/ 4的音调减小）。空间频率的延伸优选地扩展了当前存在的光刻能力的使用，从而导致显着的经济影响。乘以光刻定义的结构的空间频率适当地允许特别是晶体生长，量子结构生长和制造，高Tc超导体的通量钉扎位置，形成双折射材料，反射光学涂层，光子带隙，电子学，光学磁存储介质，场致发射体阵列，DRAM（动态随机存取存储器）电容器以及需要大面积纳米级特征的其它应用中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式