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1. 发明申请

US20050140988A1 Optical critical dimension measurement equipment 审中-公开
标题翻译：光学关键尺寸测量设备
公开(公告)号：US20050140988A1
公开(公告)日：2005-06-30
申请号：US10919367
申请日：2004-08-17
申请人： Dong-gun Lee , Seong-woon Choi , Seong-yong Moon , Byung-gook Kim , Min-ah Kim
发明人： Dong-gun Lee , Seong-woon Choi , Seong-yong Moon , Byung-gook Kim , Min-ah Kim
IPC分类号： H01L21/66 , G01B11/02 , G01B11/14 , G03F7/20
CPC分类号： G03F7/70625 , G01B11/02
摘要： An OCD measurement equipment, including a tunable laser system, and a method of measuring the CD of patterns formed on a substrate. A light source optical system emits light which wavelength changes over time. A projector optical system projects the light emitted from the light source optical system on the substrate. A substrate support unit supports the substrate. An image relay optical system relays light reflected by the substrate. An image detection optical system detects the light relayed by the image relay optical system using a detector which detects the spatial distribution of the light.
摘要翻译：包括可调谐激光系统的OCD测量设备以及测量形成在基板上的图案的CD的方法。光源光学系统发射波长随时间变化的光。投影仪光学系统将从光源光学系统发射的光投影到基板上。基板支撑单元支撑基板。图像中继光学系统中继由基板反射的光。图像检测光学系统使用检测光的空间分布的检测器来检测由图像中继光学系统中继的光。

2. 发明申请

US20120127444A1 Reflection Mask For EUV Lithography, System For EUV Lithography, And Method Of Fixing The Reflection Mask For EUV Lithography 审中-公开
标题翻译： EUV光刻反射掩模，EUV平版印刷系统和固定EUV光刻反射掩模的方法
公开(公告)号：US20120127444A1
公开(公告)日：2012-05-24
申请号：US13221286
申请日：2011-08-30
申请人： Sung-min Huh , Dong-gun Lee , In-yong Kang
发明人： Sung-min Huh , Dong-gun Lee , In-yong Kang
IPC分类号： G03B27/70 , G03F1/00
CPC分类号： G03F1/24 , G03F1/42 , G03F9/7011 , G03F9/7088
摘要： Example embodiments of the inventive concepts relate to a reflection mask including an upper surface configured to reflect extreme ultraviolet EUV light, a lower surface opposite the upper surface, where the lower surface includes at least one alignment key. The reflection mask may include a conductive layer, a substrate on the conductive layer, a reflection layer on the substrate, and an absorption pattern on the reflection layer. The reflection layer may define the upper surface configured to reflect extreme ultraviolet EUV light. The absorption pattern may expose the upper surface of the reflection layer.
摘要翻译：本发明构思的示例实施例涉及一种反射掩模，其包括被配置为反射极紫外EUV光的上表面，与上表面相对的下表面，其中下表面包括至少一个对准键。反射掩模可以包括导电层，导电层上的衬底，衬底上的反射层和反射层上的吸收图案。反射层可以限定被配置为反射极紫外EUV光的上表面。吸收图案可以暴露反射层的上表面。

3. 发明授权

US09176375B2 Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit 有权
标题翻译：降低光掩模的配准误差的方法以及相关的光掩模和制造集成电路的方法
公开(公告)号：US09176375B2
公开(公告)日：2015-11-03
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

4. 发明授权

US08335038B2 Apparatus for measuring aerial image of EUV mask 有权
标题翻译：用于测量EUV掩模的航空图像的装置
公开(公告)号：US08335038B2
公开(公告)日：2012-12-18
申请号：US12910605
申请日：2010-10-22
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G01B11/30 , G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

5. 发明授权

US07821714B1 Apparatus and method for measuring aerial image of EUV mask 有权
标题翻译： EUV面罩航空图像测量装置及方法
公开(公告)号：US07821714B1
公开(公告)日：2010-10-26
申请号：US12659261
申请日：2010-03-02
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

6. 发明申请

US20090191475A1 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US20090191475A1
公开(公告)日：2009-07-30
申请号：US12383640
申请日：2009-03-26
申请人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
发明人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/70 , G03F7/70625 , G21K2201/061
摘要： A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.
摘要翻译：制造光掩模的方法包括：提供光掩模; 曝光光掩模以获得光掩模的空间图像，并使用空中图像评估光掩模; 以及根据评估结果改变与空中图像相关联的光掩模的光学参数。

7. 发明授权

US08072679B2 Microscope and method of providing image data using the same 有权
标题翻译：显微镜和使用其提供图像数据的方法
公开(公告)号：US08072679B2
公开(公告)日：2011-12-06
申请号：US12153785
申请日：2008-05-23
申请人： Dong-wan Kim , Dong-gun Lee , Sung-min Huh
发明人： Dong-wan Kim , Dong-gun Lee , Sung-min Huh
IPC分类号： G02B21/16
CPC分类号： G02B21/16 , G02B21/361
摘要： A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.
摘要翻译：显微镜包括被配置为将光束引导到包括反射材料的物体上的光学器件，被配置为接收由物体反射的光束形成的场光谱的检测器，以及被配置为从由物体所检测的场光谱重建物体的图像的计算器探测器。

8. 发明申请

US20080297891A1 Microscope and method of providing image data using the same 有权
标题翻译：显微镜和使用其提供图像数据的方法
公开(公告)号：US20080297891A1
公开(公告)日：2008-12-04
申请号：US12153785
申请日：2008-05-23
申请人： Dong-wan Kim , Dong-gun Lee , Sung-min Huh
发明人： Dong-wan Kim , Dong-gun Lee , Sung-min Huh
IPC分类号： G02B21/06
CPC分类号： G02B21/16 , G02B21/361
摘要： A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.
摘要翻译：显微镜包括被配置为将光束引导到包括反射材料的物体上的光学器件，被配置为接收由物体反射的光束形成的场光谱的检测器，以及被配置为从由物体所检测的场光谱重建物体的图像的计算器探测器。

9. 发明申请

US20070247623A1 Polarization measuring devices, ellipsometers and polarization measuring methods 审中-公开
标题翻译：极化测量装置，椭偏仪和偏振测量方法
公开(公告)号：US20070247623A1
公开(公告)日：2007-10-25
申请号：US11723992
申请日：2007-03-23
申请人： Dong-wan Kim , Dong-gun Lee , Kyoung-yoon Bang
发明人： Dong-wan Kim , Dong-gun Lee , Kyoung-yoon Bang
IPC分类号： G01J4/00
CPC分类号： G01J4/00 , G01N21/211 , G01N21/8422
摘要： A polarization measuring device includes a diffraction grating and a detector. The diffraction grating is configured to diffract incident light to observe the polarization state of the light. The detector is configured to receive the light diffracted by the diffraction grating and display the polarization state of the light.
摘要翻译：偏振测量装置包括衍射光栅和检测器。衍射光栅被配置为衍射入射光以观察光的偏振状态。检测器被配置为接收由衍射光栅衍射的光并显示光的偏振状态。

10. 发明申请

US20140363633A1 METHODS OF REDUCING A REGISTRATION ERROR OF A PHOTOMASK, AND RELATED PHOTOMASKS AND METHODS OF MANUFACTURING AN INTEGRATED CIRCUIT 有权
标题翻译：降低光电二极管的注册错误的方法，以及相关的光电子元件和制造集成电路的方法
公开(公告)号：US20140363633A1
公开(公告)日：2014-12-11
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , H05K3/00 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

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