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1. 发明授权

US09176375B2 Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit 有权
标题翻译：降低光掩模的配准误差的方法以及相关的光掩模和制造集成电路的方法
公开(公告)号：US09176375B2
公开(公告)日：2015-11-03
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

2. 发明申请

US20140363633A1 METHODS OF REDUCING A REGISTRATION ERROR OF A PHOTOMASK, AND RELATED PHOTOMASKS AND METHODS OF MANUFACTURING AN INTEGRATED CIRCUIT 有权
标题翻译：降低光电二极管的注册错误的方法，以及相关的光电子元件和制造集成电路的方法
公开(公告)号：US20140363633A1
公开(公告)日：2014-12-11
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , H05K3/00 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

3. 发明申请

US20130056642A1 METHOD AND APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK 审中-公开
标题翻译：用于测量EUV掩蔽的空气影像的方法和装置
公开(公告)号：US20130056642A1
公开(公告)日：2013-03-07
申请号：US13542936
申请日：2012-07-06
申请人： Dong-gun LEE , Seong-sue Kim
发明人： Dong-gun LEE , Seong-sue Kim
IPC分类号： G01J1/04
CPC分类号： G03F1/82 , B82Y10/00 , B82Y40/00 , G01J1/4228 , G01J1/4257 , G03F1/22
摘要： An aerial image measuring apparatus includes an extreme ultra-violet (EUV) light generation unit configured to generate EUV light, a moving unit configured to mount an EUV mask and to move the EUV mask in x and y axis directions, a primary reduction optics configured to primarily reduce a divergence of the EUV light generated by the EUV light generation unit, a secondary reduction optics configured to secondarily reduce the divergence of the primarily reduced EUV light, and a detection unit configured to sense energy information from the secondarily reduced EUV light reflected from the plurality of regions on the EUV mask, the secondarily reduced EUV light being incident on and reflected from a plurality of regions on the EUV mask.
摘要翻译：一种空间图像测量装置，包括：被配置为产生EUV光的极紫外（EUV）光产生单元，被配置为安装EUV掩模并在x轴和y轴方向上移动EUV掩模的移动单元，以主要减少由EUV光发生单元产生的EUV光的发散，配置成二次减少主要减少的EUV光的发散的次级减光光学元件和被配置为从二次降低的EUV光中检测能量信息的检测单元在EUV掩模上的多个区域中，二次还原的EUV光入射到EUV掩模上的多个区域并从其反射。

4. 发明申请

US20110240863A1 METHODS AND APPARATUSES FOR MEASURING PHASE ROUGHNESS IN AN EXTREME ULTRAVIOLET MASK 审中-公开
标题翻译：用于测量超极紫外线掩膜相位粗糙度的方法和装置
公开(公告)号：US20110240863A1
公开(公告)日：2011-10-06
申请号：US12984856
申请日：2011-01-05
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G01N21/17
CPC分类号： G01N21/4788 , G01B11/303 , G01N2021/479 , G03F1/24 , G03F1/84
摘要： Example embodiments are directed to a method and an apparatus for measuring phase roughness in an extreme ultraviolet (EUV) mask. In example embodiments, a speckle generated by the phase roughness in the EUV mask is detected by irradiating an EUV beam on the EUV mask. The phase roughness in the EUV mask is calculated and measured using the speckle.
摘要翻译：示例性实施例涉及用于测量极紫外（EUV）掩模中的相位粗糙度的方法和装置。在示例实施例中，通过在EUV掩模上照射EUV波束来检测由EUV掩模中的相位粗糙度产生的散斑。使用斑点计算和测量EUV掩模中的相位粗糙度。

5. 发明授权

US08335038B2 Apparatus for measuring aerial image of EUV mask 有权
标题翻译：用于测量EUV掩模的航空图像的装置
公开(公告)号：US08335038B2
公开(公告)日：2012-12-18
申请号：US12910605
申请日：2010-10-22
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G01B11/30 , G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

6. 发明申请

US20110033025A1 APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK 有权
标题翻译：用于测量EUV掩蔽的空中影像的装置
公开(公告)号：US20110033025A1
公开(公告)日：2011-02-10
申请号：US12910605
申请日：2010-10-22
申请人： DONG-GUN LEE , Seong-sue Kim
发明人： DONG-GUN LEE , Seong-sue Kim
IPC分类号： G21K5/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含该图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

7. 发明授权

US07821714B1 Apparatus and method for measuring aerial image of EUV mask 有权
标题翻译： EUV面罩航空图像测量装置及方法
公开(公告)号：US07821714B1
公开(公告)日：2010-10-26
申请号：US12659261
申请日：2010-03-02
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

8. 发明授权

US08422760B2 System for monitoring haze of a photomask 有权
标题翻译：用于监控光掩模雾度的系统
公开(公告)号：US08422760B2
公开(公告)日：2013-04-16
申请号：US12588490
申请日：2009-10-16
申请人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
发明人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.
摘要翻译：一种用于监视光掩模的雾度的系统，包括安装有光掩模的安装单元，向安装单元上安装的光掩模发射光束的发光单元，检测由所述光掩模发射的光束的衍射图案的检测单元发光单元并通过光掩模，以及分析单元，分析由检测单元检测的衍射图案。

9. 发明授权

US08335039B2 Method of measuring aerial image of EUV mask 有权
标题翻译： EUV面罩空间图像测量方法
公开(公告)号：US08335039B2
公开(公告)日：2012-12-18
申请号：US13238748
申请日：2011-09-21
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr，其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

10. 发明申请

US20100111402A1 System for monitoring haze of a photomask 有权
标题翻译：用于监控光掩模雾度的系统
公开(公告)号：US20100111402A1
公开(公告)日：2010-05-06
申请号：US12588490
申请日：2009-10-16
申请人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
发明人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.
摘要翻译：一种用于监视光掩模的雾度的系统，包括安装有光掩模的安装单元，向安装单元上安装的光掩模发射光束的发光单元，检测由所述光掩模发射的光束的衍射图案的检测单元发光单元并通过光掩模，以及分析单元，分析由检测单元检测的衍射图案。

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