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1. 发明申请

US20110205217A1 METHOD OF DRIVING DISPLAY PANEL 有权
标题翻译：驱动显示面板的方法
公开(公告)号：US20110205217A1
公开(公告)日：2011-08-25
申请号：US12451066
申请日：2008-04-24
申请人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
发明人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要翻译：提供了一种驱动具有电荷捕获器件和有机发光二极管（OLED）的显示面板的方法。电荷捕获器件包括纳米晶体层。纳米晶体层包括结晶和分散的纳米晶体，以及掩埋纳米晶体的阻挡层。当施加编程电压时，电荷被捕获在纳米晶体中，并且OLED通过施加读取电压以预定亮度发光。数据信号顺序地施加到显示面板的所有像素以表达所需的灰度。显示面板的像素接收读取电压并同时发光。

2. 发明授权

US6161623A Method and apparatus for controlling fire and smoke 失效
标题翻译：防火和烟雾控制的方法和装置
公开(公告)号：US6161623A
公开(公告)日：2000-12-19
申请号：US171254
申请日：1999-03-05
申请人： Dong-Won Shin
发明人： Dong-Won Shin
IPC分类号： E06B5/00 , A62C2/00 , A62C2/08 , E06B5/16 , A62C35/00
CPC分类号： A62C2/08 , E06B5/16
摘要： Control of smoke and fire in a region threatened by a fire through the use of an exit door and a doorcase around an exit door is accomplished in such a manner to first supply water from a water source to a water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube is provided with a solenoid valve for controlling the water flow into the doorcase and a branch-connecting portion. Further, pressurized air is supplied to an air supply tube connected to the branch-connecting portion to fluid-communicate with the water supply tube. The air supply tube is provided with an air solenoid valve for controlling the airflow into the branch-connecting portion. The solenoid valve is opened to render the water to flow into the doorcase having a plurality of nozzle holes facing to the exit door, if a fire is detected either by a detector or a manual actuator. Further, the air solenoid valve is opened to render the air under pressure to flow into the branch-connecting portion, if opening the exit door is detected by a pressure sensor.
摘要翻译： PCT No.PCT / KR97 / 00064 Sec。 371日期1999年3月5日 102（e）1999年3月5日PCT PCT 1997年4月25日PCT公布。公开号WO97 / 39801 日期1997年10月30日通过在出口门周围使用出口门和门柜来控制受到火灾威胁的地区的烟火和火灾，以便首先将水从水源供应到供水管其通过泵以恒定的压力水平连接到门口。供水管通过泵以恒定的压力水平连接到门口。供水管设置有用于控制进入门室的水流的电磁阀和分支连接部分。此外，加压空气被供给到与分支连接部连接的空气供给管，以与供水管流体连通。供气管设有用于控制进入分支连接部分的气流的空气电磁阀。如果由检测器或手动致动器检测到火灾，则打开电磁阀以使水流入门室，其具有面向出口门的多个喷嘴孔。此外，如果通过压力传感器检测到打开出口门，则空气电磁阀被打开以使压力下的空气流入分支连接部分。

3. 发明授权

US07542518B2 Predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier using a look-up table 有权
标题翻译：用于使用查找表补偿功率放大器的非线性失真特性的预失真装置和方法
公开(公告)号：US07542518B2
公开(公告)日：2009-06-02
申请号：US11027676
申请日：2005-01-03
申请人： Dong-Hyun Kim , Dong-Won Shin
发明人： Dong-Hyun Kim , Dong-Won Shin
IPC分类号： H04K1/02
CPC分类号： H04L27/368
摘要： A polynomial predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier is provided. The apparatus and method comprise an adaptation controller for determining polynomial coefficients by calculating an inverse nonlinear distortion characteristic of the power amplifier, and calculating complex predistortion gains for all possible amplitudes of an input signal using the determined polynomial coefficients; and a predistorter for receiving an input signal which is a combination of complex-modulated previous baseband input signal samples and current input signal samples, predistorting the input signal using the complex predistortion gains output from the adaptation controller, and outputting the predistorted input signal to the power amplifier.
摘要翻译：提供了一种用于补偿功率放大器的非线性失真特性的多项式预失真装置和方法。该装置和方法包括：一个自适应控制器，用于通过计算功率放大器的反非线性失真特性来确定多项式系数;以及使用所确定的多项式系数来计算输入信号的所有可能振幅的复数预失真增益; 以及预失真器，用于接收作为复调制的先前基带输入信号样本和当前输入信号采样的组合的输入信号，使用从适配控制器输出的复数预失真增益来预失真输入信号，并将预失真输入信号输出到功率放大器。

4. 发明授权

US06817638B1 Bumper system 失效
标题翻译：保险杠系统
公开(公告)号：US06817638B1
公开(公告)日：2004-11-16
申请号：US10704878
申请日：2003-11-10
申请人： Won-Jun Choi , Dong-Won Shin , Nam-Hyeong Kim
发明人： Won-Jun Choi , Dong-Won Shin , Nam-Hyeong Kim
IPC分类号： B60R1926
CPC分类号： B60R19/18 , B60R19/04 , B60R2019/1853 , B60R2019/1873
摘要： Disclosed is a bumper system including a bumper cover, an energy absorber formed of a synthetic resin material through a foam molding process, an impact beam for supporting the energy absorber, the impact beam being formed of a glass mat thermoplastic and having a “C”-shaped section, and a stay for connecting the impact beam to a vehicle body. Tips are formed on front upper and lower portions of the impact beam, and a web portion is formed on the impact beam between the tips. Tip insertion grooves in which the tips are inserted are formed on an inner surface of the energy absorber, and a pressure receiving surface corresponding to the web portion is formed on the inner surface of the energy absorber.
摘要翻译：公开了一种保险杠系统，包括保险杠盖，通过泡沫模制工艺由合成树脂材料形成的能量吸收器，用于支撑能量吸收器的冲击梁，所述冲击梁由热塑性塑料制成并具有“C” 形状的部分，以及用于将冲击梁连接到车体的撑杆。尖部形成在冲击梁的前上部和下部，并且腹板部分形成在尖端之间的冲击梁上。在能量吸收体的内表面上形成有插入尖端的尖端插入槽，并且在能量吸收体的内表面上形成有对应于腹板部的受压面。

5. 发明授权

US06642135B2 Method for forming semiconductor memory device having a fuse 失效
标题翻译：一种用于形成具有保险丝的半导体存储器件的方法
公开(公告)号：US06642135B2
公开(公告)日：2003-11-04
申请号：US10283613
申请日：2002-10-29
申请人： Min-Sang Kim , Dong-Won Shin
发明人： Min-Sang Kim , Dong-Won Shin
IPC分类号： H01L218242
CPC分类号： H01L27/10894 , H01L23/5258 , H01L27/10882 , H01L2924/0002 , H01L2924/00
摘要： A fabrication method for forming a semiconductor device having a fuse is provided. A substrate includes a cell array area, a peripheral circuit area and a global step difference between the cell array area and the peripheral circuit area. The substrate comprises a fuse formed in the peripheral circuit of the substrate. An interlayer insulating layer is formed on the global step difference. The global step difference is reduced by a cell open process. A multilevel metal interconnection including an intermetal insulating layer is formed on the resultant structure. During the cell open process and/or the process for forming the multilevel metal interconnection, the interlayer insulating layer and/or the intermetal insulating layer is partially removed to form a recess. A passivation layer is formed on the multilevel metal interconnection. A fuse opening is formed through the recess to expose the fuse. The etching amount for forming the fuse opening is significantly reduced by the partial removal of the interlayer insulating layer and/or the intermetal insulating layer.
摘要翻译：提供一种用于形成具有熔丝的半导体器件的制造方法。基板包括单元阵列区域，外围电路区域和单元阵列区域与外围电路区域之间的全局阶跃差。衬底包括形成在衬底的外围电路中的熔丝。在全局阶差上形成层间绝缘层。通过单元打开过程减少全局步差。在所得结构上形成包括金属间绝缘层的多层金属互连。在电池打开工艺和/或用于形成多层金属互连的工艺中，层间绝缘层和/或金属间绝缘层被部分地去除以形成凹陷。在多层金属互连上形成钝化层。通过凹部形成保险丝开口以露出保险丝。通过部分去除层间绝缘层和/或金属间绝缘层，形成保险丝开口的蚀刻量显着降低。

6. 发明授权

US07601630B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07601630B2
公开(公告)日：2009-10-13
申请号：US11020827
申请日：2004-12-22
申请人： Je-Min Park , Dong-Won Shin , Yoo-Sang Hwang
发明人： Je-Min Park , Dong-Won Shin , Yoo-Sang Hwang
IPC分类号： H01L21/4763 , H01L21/8239 , H01L21/8242
CPC分类号： H01L21/76895 , H01L27/0629 , H01L27/10814 , H01L27/10885 , H01L27/10894
摘要： A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an insulation layer on a semiconductor substrate having a cell array region, a core region, and a peripheral region, each having at least one transistor formed therein, and forming both a first landing pad in the core region on the insulation layer and a second landing pad in the peripheral region, the first landing pad being overlapped with a part of a first conductive line. The invention reduces the contact resistance and prevents or minimizes a device failure caused by a misalignment, with the simplified process.
摘要翻译：制造半导体存储器件的方法和形成电阻器和蚀刻保护层的结构以降低接触电阻。根据本发明的制造半导体存储器件的方法包括在具有单元阵列区域，芯区域和周边区域的半导体衬底上形成绝缘层，每个晶体管阵列区域和外围区域都具有形成在其中的至少一个晶体管，并且形成第一在绝缘层上的芯区域中的着陆焊盘和外围区域中的第二着陆焊盘，第一着陆焊盘与第一导电线的一部分重叠。本发明通过简化的过程降低了接触电阻并且防止或最小化由不对准引起的设备故障。

7. 发明授权

US07153740B2 Fabrication of lean-free stacked capacitors 有权
公开(公告)号：US07153740B2
公开(公告)日：2006-12-26
申请号：US10853628
申请日：2004-05-25
申请人： Dae-Hwan Kim , Min Heo , Dong-Won Shin , Byeong-Hyeon Lee
发明人： Dae-Hwan Kim , Min Heo , Dong-Won Shin , Byeong-Hyeon Lee
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852 , H01L27/10855
摘要： For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

8. 发明授权

US06956433B2 Polynomial predistorter using complex vector multiplication 有权
标题翻译：多项式预失真器使用复矢量乘法
公开(公告)号：US06956433B2
公开(公告)日：2005-10-18
申请号：US10772348
申请日：2004-02-06
申请人： Dong-Hyun Kim , Dong-Won Shin
发明人： Dong-Hyun Kim , Dong-Won Shin
IPC分类号： H03F1/32 , H03F1/26 , H03F1/30
CPC分类号： H03F1/3258 , H03F1/3247 , H03F1/3294
摘要： A polynomial predistorter and predistorting method for predistorting a complex modulated baseband signal are provided. In the polynomial predistorter, a first complex multiplier generates first complex predistortion gains, using a current input signal and complex polynomial coefficients modeled on the inverse non-linear distortion characteristic of the power amplifier, and multiplies them by I and Q signal components of the current input signal, respectively. At least one second complex multiplier generates second complex predistortion gains using the complex polynomial coefficients and previous predistorted signals and multiplies them by I and Q signal components of the previous predistorted signals, respectively. A summer sums the outputs of the first and second complex multipliers and outputs the sum as a predistorted signal to the power amplifier.
摘要翻译：提供了一种用于预失真复调制基带信号的多项式预失真器和预失真方法。在多项式预失真器中，第一复数乘法器使用当前输入信号和基于功率放大器的逆非线性失真特性建模的复数多项式系数产生第一复数预失真增益，并将它们乘以电流的I和Q信号分量输入信号。至少一个第二复数乘法器使用复数多项式系数和先前的预失真信号分别产生第二复数预失真增益，并将它们乘以先前预失真信号的I和Q信号分量。夏季对第一和第二复数乘法器的输出求和，并将该和作为预失真信号输出到功率放大器。

9. 发明申请

US20050176210A1 Fabrication of lean-free stacked capacitors 有权
标题翻译：无稀土堆叠电容器的制造
公开(公告)号：US20050176210A1
公开(公告)日：2005-08-11
申请号：US10853628
申请日：2004-05-25
申请人： Dae-Hwan Kim , Min Huh , Dong-Won Shin , Byeong-Hyeon Lee
发明人： Dae-Hwan Kim , Min Huh , Dong-Won Shin , Byeong-Hyeon Lee
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/02 , H01L27/108 , H01L29/92 , H01L21/20
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852 , H01L27/10855
摘要： For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).
摘要翻译：为了制造无稀土堆叠电容器，通过材料层形成开口，包括从开口底部移位的支撑材料层。在每个开口内为相应的电容器形成相应的第一电极。图案化支撑材料层以形成围绕第一电极的支撑结构。在第一电极的暴露的顶部周围形成遮蔽间隔物，并且蚀刻掉支撑材料的暴露部分以形成支撑结构。这种叠层电容器被应用在DRAM（动态随机存取存储器）内。

10. 发明授权

US08441472B2 Method of driving display panel 有权
标题翻译：显示面板驱动方法
公开(公告)号：US08441472B2
公开(公告)日：2013-05-14
申请号：US12451066
申请日：2008-04-24
申请人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Woo-Sik Nam , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Woo-Sik Nam , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G09G5/00 , G06F3/038
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要翻译：提供了一种驱动具有电荷捕获器件和有机发光二极管（OLED）的显示面板的方法。电荷捕获器件包括纳米晶体层。纳米晶体层包括结晶和分散的纳米晶体，以及掩埋纳米晶体的阻挡层。当施加编程电压时，电荷被捕获在纳米晶体中，并且OLED通过施加读取电压以预定亮度发光。数据信号顺序地施加到显示面板的所有像素以表达所需的灰度。显示面板的像素接收读取电压并同时发光。

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