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1. 发明授权

US5658823A Semiconductor laser diode and manufacturing method therefor 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US5658823A
公开(公告)日：1997-08-19
申请号：US359657
申请日：1994-12-20
申请人： Seung-kee Yang
发明人： Seung-kee Yang
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01L21/020
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2081 , H01S5/2214 , H01S5/2231
摘要： A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.
摘要翻译：一种自对准结构的激光二极管及其制造方法，包括以下步骤：在半导体衬底上形成包括激活层的多重外延层; 在所述多个外延层的顶表面上形成矩形脊; 在具有所述脊的多个外延层上沉积具有预定厚度的钝化层; 在所述钝化层上沉积光致抗蚀剂; 暴露在脊的顶表面上的整个光致抗蚀剂或者与脊的顶表面重叠的整个光致抗蚀剂的部分和沉积在垂直于脊的顶表面的脊的侧表面上的光致抗蚀剂的上部暴露于预定深度; 去除光致抗蚀剂的暴露部分; 去除暴露的钝化层; 去除残留在脊的两侧的光致抗蚀剂; 以及在所得结构的顶表面中形成电流注入层。

2. 发明授权

US06921956B2 Optical apparatus using vertical light receiving element 有权
标题翻译：使用垂直光接收元件的光学设备
公开(公告)号：US06921956B2
公开(公告)日：2005-07-26
申请号：US10671195
申请日：2003-09-25
申请人： Seung-Kee Yang , Byung-Ok Jeon , Hwa-Young Kang , Do-Young Rhee
发明人： Seung-Kee Yang , Byung-Ok Jeon , Hwa-Young Kang , Do-Young Rhee
IPC分类号： G02B6/42 , H01L31/0232
CPC分类号： G02B6/4214 , H01S5/02236 , H01S5/02248 , H01S5/0683
摘要： An optical apparatus having a vertical light receiving element is disclosed. The optical apparatus is configured to couple light generated from a light source using the vertical light receiving element, then transforms the received light signals into an electric signal. The optical apparatus includes: a vertical photo detector having a photo-absorption layer; and an optical bench on which the photo detector is disposed. The optical bench having a first groove and a second groove formed adjacent to each other, the first groove having a predetermined inclination and being formed at an edge of a first surface of the optical bench, and the first surface being opposite to a second surface of the optical bench, on which the photo detector is disposed, such that a light signal incident to the first groove is refracted at a predetermined angle by the first groove; and the light signal, which has been refracted by the first groove, is totally reflected by the second groove. As a result, that the light signal is substantially and vertically incident into the photo-absorption layer.
摘要翻译：公开了具有垂直光接收元件的光学装置。光学装置被配置为使用垂直光接收元件耦合从光源产生的光，然后将接收到的光信号转换为电信号。光学装置包括：具有光吸收层的垂直光电检测器; 以及设置有光电检测器的光学台。所述光学工作台具有彼此相邻形成的第一凹槽和第二凹槽，所述第一凹槽具有预定的倾斜度并且形成在所述光学平台的第一表面的边缘处，并且所述第一表面与所述第一表面的第二表面相对设置光电检测器的光学台，使得入射到第一凹槽的光信号由第一凹槽以预定角度折射; 并且已被第一凹槽折射的光信号被第二凹槽完全反射。结果，光信号基本上和垂直地入射到光吸收层中。

3. 发明授权

US06492239B2 Method for fabricating avalanche photodiode 有权
标题翻译：制造雪崩光电二极管的方法
公开(公告)号：US06492239B2
公开(公告)日：2002-12-10
申请号：US09839930
申请日：2001-04-20
申请人： Seung-Kee Yang , Dong-Soo Bang
发明人： Seung-Kee Yang , Dong-Soo Bang
IPC分类号： H01L2120
CPC分类号： H01L31/1075
摘要： An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps of: (a) sequentially stacking, on an n-type InP substrate, an, InP buffer layer, an InGaAs absorption layer, an n-type InGaAsP grading layer, an n-type InP current adjusting layer, and an InP amplifying layer; (b) forming a protection layer on the InP amplifying layer, etching a light-receiving area of the protection layer and the InP amplifying layer to a predetermined depth, and partially etching the protection layer to expose a FGR forming area of the InP amplifying layer; (c) diffusing a diffusion source in the etched light-receiving area and the exposed FGR forming area; (d) forming a reflection suppressing layer on the diffusion layer formed on the light-receiving area by diffusing the diffusion source, the FGR layer and the exposed amplifying layer; (e) forming an upper electrode layer to a predetermined depth from the reflection suppressing layer to the diffusion layer formed on the light-receiving area; and, (f) forming a lower electrode layer on a back of the substrate.
摘要翻译：公开了一种具有简化的制造工艺和改进的再现性的雪崩光电二极管制造方法。制造雪崩光电二极管的方法包括以下步骤：（a）在n型InP衬底上依次堆叠InP缓冲层，InGaAs吸收层，n型InGaAsP分级层，n型InP 电流调节层和InP放大层; （b）在InP放大层上形成保护层，将保护层的光接收区域和InP放大层蚀刻到预定深度，并部分地蚀刻保护层以暴露InP放大层的FGR形成区域 ; （c）在蚀刻的光接收区域和暴露的FGR形成区域中扩散漫射源; （d）通过扩散扩散源，FGR层和曝光的放大层，在形成在受光区上的扩散层上形成反射抑制层; （e）从形成在所述受光区域上的所述反射抑制层到所述扩散层的上部电极层形成预定深度; 和（f）在基板的背面形成下电极层。

4. 发明申请

US20050265731A1 Wireless terminal for carrying out visible light short-range communication using camera device 审中-公开
标题翻译：无线终端，用于使用相机设备进行可见光短距离通信
公开(公告)号：US20050265731A1
公开(公告)日：2005-12-01
申请号：US11043216
申请日：2005-01-26
申请人： Ji-Eun Keum , Jong-Hwa Lee , Jae-Yeon Song , Hyeon-Woo Lee , Seung-Kee Yang
发明人： Ji-Eun Keum , Jong-Hwa Lee , Jae-Yeon Song , Hyeon-Woo Lee , Seung-Kee Yang
IPC分类号： H04M1/00 , H04B7/26 , H04B10/11 , H04B10/116 , H04M1/22 , H04M1/725 , H04W84/10 , H04W88/02 , H04B10/04
CPC分类号： H04B10/114 , H04B10/116 , H04M1/22 , H04M1/7253 , H04M2250/52
摘要： Disclosed is a wireless communication system using visible light and, more particularly, a short-range wireless communication system using a camera sensor module and a flash module mounted on a wireless terminal. The wireless terminal utilizes an LED and a camera sensor selectively for performing camera functions in a wireless terminal and as interface modules for visible light short-range communication.
摘要翻译：公开了一种使用可见光的无线通信系统，更具体地，使用安装在无线终端上的相机传感器模块和闪存模块的短距离无线通信系统。无线终端选择性地使用LED和相机传感器来执行无线终端中的相机功能以及用于可见光短距离通信的接口模块。

5. 发明申请

US20050145965A1 Light receiving element and method of manufacturing the same 审中-公开
标题翻译：光接收元件及其制造方法
公开(公告)号：US20050145965A1
公开(公告)日：2005-07-07
申请号：US11053488
申请日：2005-02-08
申请人： Seung-Kee Yang , Ahn-Goo Choo
发明人： Seung-Kee Yang , Ahn-Goo Choo
IPC分类号： H01L31/10 , G02B6/42 , H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02161 , H01L31/022408 , H01L31/035281 , Y02E10/50
摘要： A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.
摘要翻译：公开了一种用于将接收的光信号转换为电信号的光接收元件及其制造方法。光接收元件包括第一导电类型的半导体衬底; 第二导电类型的半导体层; 以及插入在半导体衬底和第二导电类型的半导体层之间的光吸收层。半导体衬底包括：相对于光信号的入射平面具有倾斜度的第一凹槽，使得当光信号已经入射到第一凹槽时，光信号可以被折射; 并且由第一凹槽折射的光信号被完全反射并随后被吸收到光吸收层中的第二凹槽，使得光信号朝向光吸收层的垂直入射漂移最小化。

6. 发明授权

US06780750B2 Photodiode for ultra high speed optical communication and fabrication method therefor 有权
标题翻译：用于超高速光通信的光电二极管及其制造方法
公开(公告)号：US06780750B2
公开(公告)日：2004-08-24
申请号：US10653811
申请日：2003-09-03
申请人： Seung-Kee Yang
发明人： Seung-Kee Yang
IPC分类号： H01L2144
CPC分类号： H01L31/022408 , H01L31/022416 , H01L31/105
摘要： Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.
摘要翻译：公开了具有蘑菇形状的p型电极的光电二极管。 p型电极形成为蘑菇形状，使得由光电二极管和电极的掺杂剂的扩展区域所面临的接触面积可以最小化，并且可以减小光电二极管的电容。此外，p型电极被构造为在其上端具有较宽的宽度，从而允许引线接合容易地执行。

7. 发明授权

US06780532B2 Photodiode detector and fabrication method thereof 失效
标题翻译：光电二极管检测器及其制造方法
公开(公告)号：US06780532B2
公开(公告)日：2004-08-24
申请号：US10315586
申请日：2002-12-10
申请人： Seung-Kee Yang , Jea-Myung Baek
发明人： Seung-Kee Yang , Jea-Myung Baek
IPC分类号： B32B900
CPC分类号： H01L31/0203 , H01L31/0735 , H01L31/184 , Y02E10/544
摘要： Disclosed is a photodiode detector including: an InP substrate; a u-In0.53Ga0.47As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In0.53Ga0.47As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.
摘要翻译：公开了一种光电二极管检测器，包括：InP衬底; 在InP衬底上生长和堆叠的u-In 0.53 Ga 0.47 As层; u-Inp层，堆叠在u-In0.53Ga0.47As层的上部; 层叠在u-Inp层的上部的SiNx绝缘层; 层叠在SiNx绝缘层的上部的附加绝缘层; 通过Zn扩散在形成在附加绝缘层和SiNx绝缘层之间的预定位置处的开口下方的u-Inp层部分上形成的P-InP层; 位于所述附加绝缘层的上部的P金属层; 以及与非反射层一起形成在InP衬底的下部的N金属层。本发明的光电二极管检测器在SiNx绝缘层的上部形成相对厚的低介电常数的BCB材料，从而获得所需的电容。

8. 发明授权

US5640410A Semiconductor laser diode 失效
标题翻译：半导体激光二极管
公开(公告)号：US5640410A
公开(公告)日：1997-06-17
申请号：US535933
申请日：1995-09-28
申请人： Seung-kee Yang
发明人： Seung-kee Yang
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/30 , H01S3/19
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2081 , H01S5/2214 , H01S5/2231
摘要： A self-align structured laser diode and manufacturing method including the steps of forming a multiple epitaxy layer including an activation layer on a semiconductor substrate; forming a rectangular ridge on a top surface of the multiple epitaxy layer; depositing a passivation layer having a predetermined thickness on the multiple epitaxy layer having the ridge; depositing a photoresist on the passivation layer; exposing the entire photoresist on the top surface of the ridge or the portion of the entire photoresist overlapping the top surface of the ridge and the upper portion of the photoresist deposited on the side surface of the ridge perpendicular to the top surface of the ridge to a predetermined depth; removing the exposed portion of the photoresist; removing the exposed passivation layer; removing the photoresist that remains in both sides of the ridge; and forming a current injection layer in the top surface of the resultant structure.
摘要翻译：一种自对准结构的激光二极管及其制造方法，包括以下步骤：在半导体衬底上形成包括激活层的多重外延层; 在所述多个外延层的顶表面上形成矩形脊; 在具有所述脊的多个外延层上沉积具有预定厚度的钝化层; 在所述钝化层上沉积光致抗蚀剂; 暴露在脊的顶表面上的整个光致抗蚀剂或者与脊的顶表面重叠的整个光致抗蚀剂的部分和沉积在垂直于脊的顶表面的脊的侧表面上的光致抗蚀剂的上部暴露于预定深度; 去除光致抗蚀剂的暴露部分; 去除暴露的钝化层; 去除残留在脊的两侧的光致抗蚀剂; 以及在所得结构的顶表面中形成电流注入层。

9. 发明申请

US20130169488A1 MAGNETIC SUBSTANCE AND COMPOSITE MATERIAL FOR ANTENNAS EMPLOYING THE SAME 审中-公开
标题翻译：磁性物质和使用其的天线的复合材料
公开(公告)号：US20130169488A1
公开(公告)日：2013-07-04
申请号：US13604685
申请日：2012-09-06
申请人： Jun-sig KUM , Nak-hyun KIM , Hyun-jin KIM , Seung-kee YANG , Joong-hee LEE
发明人： Jun-sig KUM , Nak-hyun KIM , Hyun-jin KIM , Seung-kee YANG , Joong-hee LEE
IPC分类号： H01F1/01 , C04B35/64 , H01Q1/38 , B32B5/16
CPC分类号： C04B35/64 , C01G51/006 , C01P2002/50 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/42 , C04B35/62655 , C04B35/62675 , C04B35/62685 , C04B35/6316 , C04B2235/3213 , C04B2235/3215 , C04B2235/3225 , C04B2235/3267 , C04B2235/3272 , C04B2235/3277 , C04B2235/3284 , C04B2235/36 , C04B2235/365 , C04B2235/442 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C08K3/40 , H01F1/348 , H01F1/37 , H01Q1/38 , Y10T428/2982
摘要： A new magnetic substance having a high magnetic permeability and a low magnetic permeability loss over a wide frequency bandwidth, a composite material for antennas using the new magnetic substance and a polymer, and an antenna using the composite material for antennas.
摘要翻译：在宽频带宽度下具有高磁导率和低磁导率损耗的新磁性物质，用于使用新磁性物质的天线的复合材料和聚合物，以及使用该天线用复合材料的天线。

10. 发明授权

US07161221B2 Light receiving element and method of manufacturing the same 有权
标题翻译：光接收元件及其制造方法
公开(公告)号：US07161221B2
公开(公告)日：2007-01-09
申请号：US10657371
申请日：2003-09-08
申请人： Seung-Kee Yang , Ahn-Goo Choo
发明人： Seung-Kee Yang , Ahn-Goo Choo
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02161 , H01L31/022408 , H01L31/035281 , Y02E10/50
摘要： A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.
摘要翻译：公开了一种用于将接收的光信号转换为电信号的光接收元件及其制造方法。光接收元件包括第一导电类型的半导体衬底; 第二导电类型的半导体层; 以及插入在半导体衬底和第二导电类型的半导体层之间的光吸收层。半导体衬底包括：相对于光信号的入射平面具有倾斜度的第一凹槽，使得当光信号已经入射到第一凹槽时，光信号可以被折射; 并且由第一凹槽折射的光信号被完全反射并随后被吸收到光吸收层中的第二凹槽，使得光信号朝向光吸收层的垂直入射漂移最小化。

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