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    • 10. 发明授权
    • Substrate isolation in integrated circuits
    • 集成电路中的基板隔离
    • US07358149B2
    • 2008-04-15
    • US11193150
    • 2005-07-29
    • Daniel WangChunchieh HuangDong Jun Kim
    • Daniel WangChunchieh HuangDong Jun Kim
    • H01L21/425
    • H01L27/11526H01L21/76237H01L21/823481H01L27/105H01L27/11539H01L27/11546
    • Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.
    • 衬底隔离沟槽(224)形成在半导体衬底(120)中。 通过离子注入将掺杂剂(例如硼)注入到沟槽侧壁中,以抑制沿着侧壁的电流泄漏。 在离子注入期间,晶体管栅极电介质(520)面向离子流,但在随后的热步骤中对栅极电介质的损坏退火。 在一些实施例中,掺杂剂注入是成角度的植入物。 植入物从晶片的相对侧进行,并且因此从每个有效区域的相对侧进行。 每个有源区域包括从一侧注入的区域和从相对侧注入的区域。 两个区域重叠以便于阈值电压调整。