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    • 2. 发明授权
    • Accelerated etching of chromium
    • 加速蚀刻铬
    • US06843929B1
    • 2005-01-18
    • US09514526
    • 2000-02-28
    • Donald S. FarquharEdmond O. FeyElizabeth FosterMichael J. KlodowskiPaul G. Rickerl
    • Donald S. FarquharEdmond O. FeyElizabeth FosterMichael J. KlodowskiPaul G. Rickerl
    • C23F1/26H01L21/3213B44C1/22
    • H01L21/32134C23F1/26
    • A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer. In another embodiment, the chromium volume is a chromium layer located under a conductive layer that includes a metal such as copper, wherein the steel body and the acid solution both contact the chromium layer through an opening in the conductive layer such that the opening exposes the chromium layer.
    • 一种用于提高当铬体与诸如盐酸的酸溶液接触时铬体积被蚀刻的速率的方法和相关结构。 蚀刻速率由与铬体积连续电接触的金属或钢体增加,两者都与酸溶液连续接触。 在约21℃至约52℃的温度和约1.2M至约2.4M之间的盐酸浓度(摩尔浓度)之间,蚀刻速率至少比蚀刻速率大约两倍, 将在没有钢体的情况下发生。 在一个实施方案中,铬体积是沉积在包括诸如铜的金属的导电层上的铬层,其中酸溶液不与导电层接触。 在另一个实施方案中,铬体积是位于导电层下方的铬层,该层包括诸如铜的金属,其中钢体和酸溶液都通过导电层中的开口接触铬层,使得开口暴露于 铬层。