会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Device and method for mitral valve repair
    • 二尖瓣修复装置及方法
    • US20100030330A1
    • 2010-02-04
    • US12221450
    • 2008-08-01
    • Donald E. BoboStanton RoweMichael PoppSeung Yi
    • Donald E. BoboStanton RoweMichael PoppSeung Yi
    • A61F2/24A61B19/00
    • A61F2/2442A61B90/39A61F2/2412A61F2/2418A61F2/2451A61F2/2454A61F2/2487
    • Devices and methods for reshaping a mitral valve annulus are provided. One device according to the invention is configured for deployment in the right atrium and is shaped to apply a force along the atrial septum. The device causes the atrial septum to deform and push the anterior leaflet of the mitral valve in a posterior direction for reducing mitral valve regurgitation. Another embodiment of a device is deployed in the left ventricular outflow tract at a location adjacent the aortic valve. The device may be expandable for urging the anterior leaflet toward the posterior leaflet. Another embodiment of the device includes a first anchor, a second anchor, and a bridge, with the bridge having sufficient length to reach from the coronary sinus to the right atrium and/or superior or inferior vena cava. In a further embodiment a device includes a middle anchor positioned on the bridge between the distal and proximal anchors.
    • 提供了用于重塑二尖瓣环的装置和方法。 根据本发明的一个装置被配置为展开在右心房中并且被成形为沿着房间隔施加力。 该装置使得房间隔膜变形并沿着后方向推动二尖瓣的前叶,以减少二尖瓣反流。 装置的另一实施例在与主动脉瓣相邻的位置处部署在左心室流出道中。 该装置可以是可扩展的,用于向前小叶推动前小叶。 该装置的另一实施例包括第一锚固件,第二锚固件和桥梁,桥梁具有足够的长度以从冠状窦到达右心房和/或上腔静脉或下腔静脉。 在另一实施例中,装置包括位于远端和近端锚固件之间的桥上的中间锚固件。
    • 5. 发明申请
    • Transmission system and method for radio link protocol
    • 无线电链路协议的传输系统和方法
    • US20070002864A1
    • 2007-01-04
    • US11448226
    • 2006-06-07
    • Seung YiSu-Lin Low
    • Seung YiSu-Lin Low
    • H04L12/56
    • H04L1/1832H04L1/1835H04L1/1851H04L1/1858H04L1/187H04L1/1874H04L47/10H04L47/14H04L47/266H04W28/06H04W80/02
    • The present invention discloses a system and method for eliminating useless waiting and needless packet retransmission in a radio link protocol (RLP) system having a RLP sender and a RLP receiver with one or more reception buffers, the method comprising checking for any missing packet upon receiving a transmission by the RLP receiver, sending one or more negative acknowledgements (Naks) for every missing packet to the RLP sender by the RLP receiver, retransmitting by the RLP sender only packets requested by one or more negative acknowledgements (Naks) when the RLP sender also receives a transmission suspension request, and receiving transmissions by the RLP receiver after the transmission suspension request has been sent out by the RLP receiver.
    • 本发明公开了一种在具有RLP发送者和具有一个或多个接收缓冲器的RLP接收机的无线链路协议(RLP)系统中消除无用的等待和不必要的分组重传的系统和方法,该方法包括在接收到时检查任何丢失的分组 由RLP接收机进行的传输,由RLP接收机向RLP发送器发送每个丢失的分组的一个或多个否定确认(Naks),由RLP发送者仅在RLP发送者(Naks)发送时由一个或多个否定确认(Naks)请求的分组重发 还接收传输暂停请求,并且在RLP接收机发送传输暂停请求之后由RLP接收机接收传输。
    • 6. 发明申请
    • Method for manufacturing organic electroluminescence display
    • 制造有机电致发光显示器的方法
    • US20060204902A1
    • 2006-09-14
    • US11431589
    • 2006-05-11
    • Kyung ChoiSeung Yi
    • Kyung ChoiSeung Yi
    • H01J9/227
    • H01L51/0002H01L27/3283H01L51/56
    • A method for manufacturing an organic electroluminescence display includes the steps of forming a plurality of strip-shaped first electrodes on a substrate, forming a positive photoresist layer on an entire surface of the substrate, patterning the positive photoresist layer to remain on a first area crossing the first electrodes and on a second area between the first electrodes, performing a first exposure process on a third area of the patterned positive photoresist layer, the third area being crossed the first electrodes, performing a first silylation process on the exposed positive photoresist layer, and performing an ashing process on the first to the third areas of the positive photoresist layer with an oxygen plasma.
    • 一种制造有机电致发光显示器的方法包括以下步骤:在衬底上形成多个带状第一电极,在衬底的整个表面上形成正性光致抗蚀剂层,使正性光致抗蚀剂层图案化以保持在第一区域交叉 所述第一电极和所述第一电极之间的第二区域上,在所述图案化正性光致抗蚀剂层的第三区域上进行第一曝光处理,所述第三区域与所述第一电极交叉,对所述暴露的正性光致抗蚀剂层进行第一甲硅烷化处理, 以及用氧等离子体在正性光致抗蚀剂层的第一至第三区域上进行灰化处理。