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1. 发明授权

US5563900A Broad spectrum surface-emitting led 失效
标题翻译：广谱表面发射LED
公开(公告)号：US5563900A
公开(公告)日：1996-10-08
申请号：US287820
申请日：1994-08-09
申请人： Donald E. Ackley , Paige M. Holm , Michael S. Lebby
发明人： Donald E. Ackley , Paige M. Holm , Michael S. Lebby
IPC分类号： H01S5/183 , H01S5/40 , H01S3/18 , H01S3/103
CPC分类号： H01S5/18397 , H01S5/1057 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/2063
摘要： A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.
摘要翻译：具有半导体衬底的表面发射发光器件，位于衬底表面上的半导体反射镜叠层，位于反射镜叠层上的间隔层，位于间隔层上的有源区，位于有源区上的第二间隔层，位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。有源区包括多个量子阱，每个量子阱具有不同的跃迁波长并且位于间隔层上，其中量子阱具有位于最靠近间隔层的最长过渡波长，并且多个量子阱的额外量子阱按照降低的跃迁波长使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。

2. 发明授权

US5164949A Vertical cavity surface emitting laser with lateral injection 失效
标题翻译：垂直腔表面发射激光与侧向注射
公开(公告)号：US5164949A
公开(公告)日：1992-11-17
申请号：US756695
申请日：1991-09-09
申请人： Donald E. Ackley , Paige M. Holm
发明人： Donald E. Ackley , Paige M. Holm
IPC分类号： H01S5/00 , H01S5/183
CPC分类号： H01S5/18341 , H01S5/0424 , H01S5/18308 , H01S5/18369
摘要： A planar semiconductor laser having low thermal and series resistance is fabricated. The semiconductor laser has an optical waveguide and a lateral current injection path provided by a conductive region. The conductive region disorders the active region and the first 1/4 wave stack of the laser, which reduces the reflectivity, therefore allowing control of the optical waveguide independent of the current flow. By forming the conductive region, the laser of the present invention can have stable optical characteristics and a bigger emission spot due to the weak built-in waveguide, thus resulting in the formation of a device having high output and a low thermal and series resistance.
摘要翻译：制造具有低热阻和串联电阻的平面半导体激光器。半导体激光器具有由导电区域提供的光波导和横向电流注入路径。导电区域会扰乱激光器的有源区和第一1/4波长叠层，从而降低了反射率，从而允许独立于电流的光波导的控制。通过形成导电区域，本发明的激光器由于内置波导较弱，可以具有稳定的光学特性和更大的发光点，从而形成具有高输出和低热阻和串联电阻的器件。

3. 发明授权

US5216686A Integrated HBT and VCSEL structure and method of fabrication 失效
标题翻译：集成HBT和VCSEL结构及其制造方法
公开(公告)号：US5216686A
公开(公告)日：1993-06-01
申请号：US829656
申请日：1992-02-03
申请人： Paige M. Holm , Donald E. Ackley
发明人： Paige M. Holm , Donald E. Ackley
IPC分类号： H01L27/15 , H01S5/026 , H01S5/183
CPC分类号： H01L27/15 , H01S5/183 , H01S5/0261
摘要： A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.
摘要翻译：由异质结双极晶体管（HBT）集成了由第一1/4波长叠层，有源层和第二1/4波长叠层组成的垂直腔表面发射激光器（VCSEL）。 HBT部分或完全定位在VCSEL的第一个或第二个1/4波形堆叠中。该方法提高了器件的平面性，从而可以制造高性能器件。顶部或底部发射器件可以由包括电介质层或半导体外延层的第二1/4波长叠层制造。

4. 发明授权

US5741724A Method of growing gallium nitride on a spinel substrate 失效
标题翻译：在尖晶石衬底上生长氮化镓的方法
公开(公告)号：US5741724A
公开(公告)日：1998-04-21
申请号：US774819
申请日：1996-12-27
申请人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
发明人： Jamal Ramdani , Michael S. Lebby , Paige M. Holm
IPC分类号： C30B29/38 , H01L21/20 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0254 , Y10S438/967
摘要： A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.
摘要翻译：一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法，并且在支撑衬底的表面上设置多个缓冲层。多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。第二缓冲层设置在第一缓冲层上，并且包括具有低位错密度的多层梯度的氮氧化铝。氮化铝的第三缓冲层设置在第二缓冲层上。氮化镓的第四缓冲层设置在第三缓冲层上。随后，在第四缓冲层上制造诸如激光，LED或检测器之类的光子器件结构，诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。

5. 发明授权

US09046556B2 Sensing device and related operating methods 有权
标题翻译：感应装置及相关操作方法
公开(公告)号：US09046556B2
公开(公告)日：2015-06-02
申请号：US13523675
申请日：2012-06-14
申请人： Kevin R. Fugate , Edward W. Carstens , Paige M. Holm , Dean W. Miller
发明人： Kevin R. Fugate , Edward W. Carstens , Paige M. Holm , Dean W. Miller
IPC分类号： G01R35/00 , G01R33/00 , G01R33/09
CPC分类号： G01R33/0035 , G01R33/0047 , G01R33/0082 , G01R33/098
摘要： Apparatus, systems, and methods are provided for sensing devices. An exemplary sensing device includes a sensing arrangement on a substrate to sense a first property, a heating arrangement, and a control system coupled to the first sensing arrangement and the heating arrangement to activate the heating arrangement to heat the first sensing arrangement and deactivate the heating arrangement while obtaining one or more measurement values for the first property from the first sensing arrangement.
摘要翻译：提供了用于感测装置的装置，系统和方法。一种示例性感测装置包括：感测装置，用于感测第一属性的基板上的感测装置，加热装置和耦合到第一感测装置和加热装置的控制系统，以激活加热装置以加热第一感测装置并使加热失效同时从第一感测装置获得用于第一属性的一个或多个测量值。

6. 发明授权

US07378346B2 Integrated multi-wavelength Fabry-Perot filter and method of fabrication 失效
标题翻译：集成多波长法布里 - 珀罗滤波器及其制作方法
公开(公告)号：US07378346B2
公开(公告)日：2008-05-27
申请号：US11387468
申请日：2006-03-22
申请人： Ngoc V. Le , Jeffrey H. Baker , Diana J. Convey , Paige M. Holm , Steven M. Smith
发明人： Ngoc V. Le , Jeffrey H. Baker , Diana J. Convey , Paige M. Holm , Steven M. Smith
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G01J3/26 , G02B5/284
摘要： A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (10). The method comprises forming a first mirror (16) over the substrate (10). A plurality of etalon material layers (32, 34, 36, 38) are formed over the mirror (16), and a plurality of etch stop layers (42, 44, 46) are formed, one each between adjacent etalon material layers (32, 34, 36, 38). A photoresist is patterned to create an opening (54) over the top etalon material layer (38) and an etch (56) is performed down to the top etch stop layer (46). An oxygen plasma (58) may be applied to convert the etch stop layer (46) within the opening (54) to silicon dioxide (57). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (82, 84, 86, 88). A second mirror (72) is then formed on each of the levels (82, 84, 86, 88).
摘要翻译：提供了一种用于在衬底（10）上形成单片集成滤光器（例如法布里 - 珀罗滤光片）的方法。该方法包括在衬底（10）上形成第一反射镜（16）。多个标准具材料层（32,34,36,38）形成在反射镜（16）上方，并且形成多个蚀刻停止层（42,44,46），每个蚀刻停止层之间相邻的标准具材料层（32 ，34,36,38）。图案化光致抗蚀剂以在顶部标准具材料层（38）上方形成开口（54），并且向下蚀刻停止层（46）进行蚀刻（56）。可以施加氧等离子体（58）以将开口（54）内的蚀刻停止层（46）转化为二氧化硅（57）。可以根据需要重复光刻胶图案化，蚀刻和施加氧等离子体以获得所需数量的水平（82,84,86,88）。然后在每个级（82,84,86,88）上形成第二反射镜（72）。

7. 发明授权

US06984816B2 Vertically integrated photosensor for CMOS imagers 有权
标题翻译：用于CMOS成像器的垂直集成光电传感器
公开(公告)号：US06984816B2
公开(公告)日：2006-01-10
申请号：US10641216
申请日：2003-08-13
申请人： Paige M. Holm , Jon J. Candelaria
发明人： Paige M. Holm , Jon J. Candelaria
IPC分类号： H01J40/14
CPC分类号： H01L27/14601 , H01L27/14636 , H01L27/14643
摘要： An exemplary system and method for providing a vertically integrated photosensing element suitably adapted for use in CMOS imaging applications is disclosed as comprising inter alia: a processed CMOS layer (420); and a photosensing element (380) fabricated in a vertically integrated optically active layer (320, 350), where the optically active layer (320, 350) is bonded to the CMOS layer (420) and the optically active layer (320, 350) is positioned near a metalization surface (405) of the CMOS layer (420). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize photosensing performance or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated photosensing components that may be readily incorporated with existing technologies for the improvement of CMOS imaging, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要翻译：公开了一种用于提供适合于在CMOS成像应用中使用的垂直集成光敏元件的示例性系统和方法，其特别包括：经处理的CMOS层（420）; 以及在垂直集成的光学有源层（320,350）中制造的光敏元件（380），其中光学活性层（320,350）被结合到CMOS层（420）和光学活性层（320,350）位于CMOS层（420）的金属化表面（405）附近。公开的特征和规格可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改善或以其它方式优化光敏性能或其它材料特性。本发明的示例性实施例代表性地提供了可以容易地与现有技术结合以用于改进CMOS成像，设备封装外形，重量和/或其它制造，器件或材料性能度量的集成光敏元件。

8. 发明授权

US5644328A Apparatus and method for operating groups of led display pixels in parallel to maximize active time 失效
标题翻译：用于操作LED显示像素组并联的装置和方法，以最大化活动时间
公开(公告)号：US5644328A
公开(公告)日：1997-07-01
申请号：US398270
申请日：1995-03-03
申请人： George W. Rhyne , Paige M. Holm
发明人： George W. Rhyne , Paige M. Holm
IPC分类号： G09G3/20 , G09G3/22 , G09G3/32
CPC分类号： G09G3/22 , G09G3/20 , G09G3/32
摘要： A display (10) has pixels organized into groups (11, 41) that operate in parallel. Each group (11, 41) distributes the frame time (25) of the display over the number of active pixels within the group thereby maximizing the amount of time each pixel to be illuminated can be active.
摘要翻译：显示器（10）具有组合成并行操作的组（11,41）的像素。每个组（11,41）将显示器的帧时间（25）分配在组内的有效像素数量上，从而最大化每个被照亮像素可以被激活的时间量。

9. 发明授权

US5221633A Method of manufacturing a distributed drive optoelectronic integrated circuit 失效
标题翻译：制造分布式驱动光电集成电路的方法
公开(公告)号：US5221633A
公开(公告)日：1993-06-22
申请号：US756734
申请日：1991-09-09
申请人： Paige M. Holm , George W. Rhyne
发明人： Paige M. Holm , George W. Rhyne
IPC分类号： H01L21/8252 , H01L27/15
CPC分类号： H01L21/8252 , H01L27/15 , Y10S148/072
摘要： A method of manufacturing a transmitter optoelectronic integrated circuit (10) which comprises a double heterostructure optical emission device (11) and drive circuitry (16). The optical emission device (11) comprises a plurality of optical emission loci (21) distributed throughout an active layer (12) of the optical emission device (11). Drive circuit (16) comprises a plurality of first portions (17) and a second portion (18) wherein the plurality of first portions (17) are above the plurality of emission loci (21). Second portion (18) is integrated in a lateral orientation with respect to the plurality of first portions (17). The chemical composition of the plurality of first portions (17) are such that they are nonabsorbing to optical emissions from the optical emission device (11).
摘要翻译：一种制造发射器光电集成电路（10）的方法，其包括双异质结构光发射装置（11）和驱动电路（16）。光发射装置（11）包括分布在光发射装置（11）的有源层（12）的多个光发射轨道（21）。驱动电路（16）包括多个第一部分（17）和第二部分（18），其中多个第一部分（17）在多个发射轨迹（21）之上。第二部分（18）相对于多个第一部分（17）以横向方向被一体化。多个第一部分（17）的化学成分使得它们不吸收来自光发射装置（11）的光发射。

10. 发明授权

US09720051B2 Sensor package including a magnetic field sensor and a continuous coil structure for enabling z-axis self-test capability 有权
公开(公告)号：US09720051B2
公开(公告)日：2017-08-01
申请号：US14290040
申请日：2014-05-29
申请人： Paige M. Holm , Lianjun Liu
发明人： Paige M. Holm , Lianjun Liu
IPC分类号： G01R33/09 , G01R33/00 , G01R35/00
CPC分类号： G01R33/0023 , G01R33/09 , G01R35/005
摘要： A magnetic field sensor includes in-plane sense elements located in a plane of the magnetic field sensor and configured to detect a magnetic field oriented perpendicular to the plane. A current carrying structure is positioned proximate the magnetic field sensor and includes at least one coil surrounding the in-plane sense elements. An electric current is applied to the coil to create a self-test magnetic field to be sensed by the sense elements. The coil may be vertically displaced from the plane in which the sense elements are located and laterally displaced from an area occupied by the sense elements to produce both Z-axis magnetic field components and lateral magnetic field components of the self-test magnetic field. The sense elements are arranged within the coil and interconnected to cancel the lateral magnetic field components, while retaining the Z-axis magnetic field components to be used for self-test of the magnetic field sensor.

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