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    • 1. 发明授权
    • Broad spectrum surface-emitting led
    • 广谱表面发射LED
    • US5563900A
    • 1996-10-08
    • US287820
    • 1994-08-09
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • Donald E. AckleyPaige M. HolmMichael S. Lebby
    • H01S5/183H01S5/40H01S3/18H01S3/103
    • H01S5/18397H01S5/1057H01S5/18308H01S5/18358H01S5/18361H01S5/2063
    • A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.
    • 具有半导体衬底的表面发射发光器件,位于衬底表面上的半导体反射镜叠层,位于反射镜叠层上的间隔层,位于间隔层上的有源区,位于有源区上的第二间隔层, 位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。 有源区包括多个量子阱,每个量子阱具有不同的跃迁波长并且位于间隔层上,其中量子阱具有位于最靠近间隔层的最长过渡波长,并且多个量子阱的额外量子阱按照降低的跃迁波长 使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。
    • 2. 发明授权
    • Method of growing gallium nitride on a spinel substrate
    • 在尖晶石衬底上生长氮化镓的方法
    • US5741724A
    • 1998-04-21
    • US774819
    • 1996-12-27
    • Jamal RamdaniMichael S. LebbyPaige M. Holm
    • Jamal RamdaniMichael S. LebbyPaige M. Holm
    • C30B29/38H01L21/20H01L21/203H01L21/205H01L33/00
    • H01L33/007H01L21/0242H01L21/02458H01L21/02488H01L21/02505H01L21/0254Y10S438/967
    • A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.
    • 一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法,并且在支撑衬底的表面上设置多个缓冲层。 多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。 第二缓冲层设置在第一缓冲层上,并且包括具有低位错密度的多层梯度的氮氧化铝。 氮化铝的第三缓冲层设置在第二缓冲层上。 氮化镓的第四缓冲层设置在第三缓冲层上。 随后,在第四缓冲层上制造诸如激光,LED或检测器之类的光子器件结构,诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。
    • 5. 发明授权
    • Laminated polymer optical waveguide interface and method of making same
    • 层压聚合物光波导接口及其制作方法
    • US5125054A
    • 1992-06-23
    • US736969
    • 1991-07-25
    • Donald E. AckleyChristopher K. Y. ChunMichael S. Lebby
    • Donald E. AckleyChristopher K. Y. ChunMichael S. Lebby
    • G02B6/30G02B6/38G02B6/42
    • G02B6/30G02B6/3817G02B6/42G02B6/421G02B6/4214
    • An interface between a laminated polymer optical waveguide (15) and an electronic device (39). The interface does not degrade the desirable properties of the optical waveguide (15), is simple, is low cost, and is compatible with integrated circuit technology as well as optical and electrical connectors (41,42,43,46). The interface includes at least one vertical cavity surface emitting laser or photosensitive diode (11,37) mounted above the surface of the optical waveguide (15). A mirror (21) positioned at an angle with respect to the optical waveguide (15) serves to reflect light between either the vertical cavity surface emitting laser or photosensitive diode (11,37) and the optical waveguide (15). At least one microstrip line (16) couples electrical signals between the vertical cavity surface emitting laser (11,37) and the electronic device (39).
    • 叠层聚合物光波导(15)和电子装置(39)之间的界面。 该接口不会降低光波导(15)的理想特性,简单,成本低,并且与集成电路技术以及光电连接器(41,42,43,46)兼容。 界面包括安装在光波导(15)的表面上方的至少一个垂直腔表面发射激光器或光敏二极管(11,37)。 相对于光波导(15)定位成一定角度的反射镜(21)用于在垂直空腔表面发射激光器或感光二极管(11,37)和光波导(15)之间反射光。 至少一条微带线(16)在垂直腔表面发射激光器(11,37)和电子器件(39)之间耦合电信号。