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    • 7. 发明申请
    • Process to open connection vias on a planarized surface
    • 在平坦化表面上打开连接通孔的过程
    • US20070245557A1
    • 2007-10-25
    • US11411555
    • 2006-04-25
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • Amanda BaerHamid BalamaneMichael FeldbaumMing JiangAron Pentek
    • H01K3/10
    • G11B5/3163G11B5/1278G11B5/3116Y10T29/49021Y10T29/49032Y10T29/49044Y10T29/49126Y10T29/49139Y10T29/49153Y10T29/49155Y10T29/49165Y10T29/49169
    • A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.
    • 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 在其中形成有形成有接触垫的区域形成诸如氧化铝填充层,磁性成形层等的基板。 诸如磁极和/或磁性后屏蔽的结构形成在衬底之上,并被厚层氧化铝覆盖。 可以通过在氧化铝层中不形成空隙或接缝的高沉积速率工艺来施加氧化铝。 然后可以通过化学机械抛光工艺(CMP)将氧化铝层平坦化,然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层,从而在氧化铝层中形成通孔。 然后可以将掩模剥离,并且可以将导电材料沉积到通孔中。 通过减法法而不是通过剥离工艺形成通孔允许以不会导致空隙的方式沉积氧化铝。 使用反应离子研磨允许通孔被良好地限定并且形成有基本垂直的侧壁,而不是以其它材料去除工艺(例如湿蚀刻)形成的锥形或向外扩展方式。