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1. 发明申请

US20130105303A1 PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS 有权
标题翻译：用于蚀刻低K和其他电介质膜的工艺室
公开(公告)号：US20130105303A1
公开(公告)日：2013-05-02
申请号：US13651074
申请日：2012-10-12
申请人： Dmitry LUBOMIRSKY , Srinivas NEMANI , Ellie YIEH , Sergey G. BELOSTOTSKIY
发明人： Dmitry LUBOMIRSKY , Srinivas NEMANI , Ellie YIEH , Sergey G. BELOSTOTSKIY
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , C23C16/0245 , H01J37/32091 , H01J37/32357 , H01J37/32477 , H01J37/32532 , H01J37/32587 , H01J37/32715 , H01J2237/3341 , H01L21/02126 , H01L21/3065 , H01L21/3105 , H01L21/31116 , H01L21/31144 , H01L21/67167 , H01L21/67207 , H01L21/6831
摘要： Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.
摘要翻译：描述了用于蚀刻低k和其他电介质膜的方法和处理室。例如，一种方法包括用等离子体处理来修改低k电介质层的部分。选择性地在低k电介质层的掩模层和低k电介质层的未修改部分上蚀刻低k电介质层的改性部分。描述了具有用于交替产生不同等离子体的多个室区的蚀刻室。在实施例中，提供第一电荷耦合等离子体源以在一个操作模式中产生到工件的离子通量，而提供次级等离子体源以在另一个操作模式中提供反应物质通量，而不会对工件产生显着的离子通量。控制器操作以随着时间重复地循环操作模式以去除期望的累积量的电介质材料。

2. 发明申请

US20150079301A1 METHOD OF DEPOSITING THIN METAL-ORGANIC FILMS 审中-公开
标题翻译：沉积薄金属有机膜的方法
公开(公告)号：US20150079301A1
公开(公告)日：2015-03-19
申请号：US14067851
申请日：2013-10-30
申请人： Srinivas NEMANI , Ellie YIEH , Dmitry LUBOMIRSKY
发明人： Srinivas NEMANI , Ellie YIEH , Dmitry LUBOMIRSKY
IPC分类号： B05D1/02 , B05C5/02 , B05D3/06
CPC分类号： B05D1/02 , B05C5/0291 , B05D3/067 , C23C18/06 , C23C18/1216 , C23C18/1245 , C23C18/125 , C23C18/1283 , C23C18/14 , H01L21/02178 , H01L21/02288 , H01L21/0332 , H01L21/6715
摘要： Embodiments include systems, apparatuses, and methods of thin metal-organic film deposition with inkjet printheads. A method of depositing a metal-organic thin film over a substrate includes introducing chemical precursors into one or more piezoelectric printheads. The chemical precursors including a metallic compound and a reactive liquid or gas. The method further includes dispensing droplets or a stream of the chemical precursors with the piezoelectric printheads onto a surface of the substrate supported by a stage in a vacuum chamber.
摘要翻译：实施例包括用喷墨打印头薄金属 - 有机膜沉积的系统，装置和方法。在衬底上沉积金属 - 有机薄膜的方法包括将化学前体引入到一个或多个压电打印头中。化学前体包括金属化合物和反应性液体或气体。该方法还包括将液滴或化学前体物流与压电打印头分配到由真空室中的载物台支撑的基底表面上。

3. 发明申请

US20110114601A1 PLASMA SOURCE DESIGN 有权
公开(公告)号：US20110114601A1
公开(公告)日：2011-05-19
申请号：US12949661
申请日：2010-11-18
申请人： Dmitry LUBOMIRSKY , Jang-Gyoo YANG , Matthew MILLER , Jay PINSON , Kien CHUC
发明人： Dmitry LUBOMIRSKY , Jang-Gyoo YANG , Matthew MILLER , Jay PINSON , Kien CHUC
IPC分类号： C23F1/08 , C23C16/44 , C23C16/505 , H05H1/24 , C23F1/00
CPC分类号： H01J37/32357 , H01J37/3211
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

4. 发明申请

US20130276980A1 ESC WITH COOLING BASE 审中-公开
标题翻译：带冷却基座的ESC
公开(公告)号：US20130276980A1
公开(公告)日：2013-10-24
申请号：US13860479
申请日：2013-04-10
申请人： Dmitry LUBOMIRSKY , Kyle TANTIWONG
发明人： Dmitry LUBOMIRSKY , Kyle TANTIWONG
IPC分类号： H05H1/00
CPC分类号： H05H1/00 , H01J37/32697 , H01J37/32715 , H01J37/32724
摘要： An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. An ESC assembly includes a 2-stage design where a heat transfer fluid inlet (supply) and heat transfer fluid outlet (return) is in a same physical plane. The 2-stage design includes an assembly of a base upon which a ceramic (e.g., AlN) is disposed. The base is disposed over a diffuser which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. Affixed to the diffuser is a reservoir plate which is to provide a reservoir between the diffuser and the reservoir plate that supplies fluid to the diffuser. Heat transfer fluid returned through the diffuser is passed through the reservoir plate.
摘要翻译：具有用于等离子体处理室的冷却基座的静电卡盘（ESC），例如等离子体蚀刻室。 ESC组件包括2级设计，其中传热流体入口（供应）和传热流体出口（返回）处于相同的物理平面中。 2级设计包括一个基座的组件，陶瓷（例如，AlN）被布置在该基座上。底座设置在扩散器上，扩散器可以在卡盘区域上具有数百个小孔，以提供传热流体的均匀分布。与扩散器相连的是储存器板，其用于在扩散器和储存器板之间提供储存器，以将流体供应到扩散器。通过扩散器返回的传热流体通过储存器板。

5. 发明申请

US20130284374A1 HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY 有权
标题翻译：具有实时热区调节能力的高温静电切割机
公开(公告)号：US20130284374A1
公开(公告)日：2013-10-31
申请号：US13793512
申请日：2013-03-11
申请人： Dmitry LUBOMIRSKY , Jennifer Y. SUN , Senh THACH , Xing LIN , Michael D. WILLWERTH , Konstantin MAKHRATCHEV
发明人： Dmitry LUBOMIRSKY , Jennifer Y. SUN , Senh THACH , Xing LIN , Michael D. WILLWERTH , Konstantin MAKHRATCHEV
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , B23B31/28 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/68792
摘要： Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.
摘要翻译：本发明的实施例提供了用于在升高的温度下操作的静电卡盘。本发明的一个实施例提供了一种用于静电卡盘的电介质卡盘体。电介质卡盘体包括：基板支撑板，具有用于接收基板的顶表面和与顶表面相对的后表面;嵌入在基板支撑板中的电极;以及轴，其具有连接到基板的背面的第一端支撑板和与第一端相对的第二端。第二端构造成接触冷却基座并且向衬底支撑板提供温度控制。轴是中空的，具有封闭中心开口的侧壁，以及穿过侧壁形成并且从第一端延伸到第二端的两个或更多个通道。

6. 发明申请

US20130109190A1 PULSED PLASMA WITH LOW WAFER TEMPERATURE FOR ULTRA THIN LAYER ETCHES 有权
标题翻译：用于超薄薄层蚀刻的低温度的脉冲等离子体
公开(公告)号：US20130109190A1
公开(公告)日：2013-05-02
申请号：US13654285
申请日：2012-10-17
申请人： Thorsten LILL , Klaus SCHUEGRAF , Dmitry LUBOMIRSKY
发明人： Thorsten LILL , Klaus SCHUEGRAF , Dmitry LUBOMIRSKY
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/3065 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01J37/32146 , H01J37/32449
摘要： Ultrathin material layers are plasma etched with an etch system configured for cryogenic cooling of a substrate to reduce the diffusion coefficients of foreign and intrinsic stop layer atoms (e.g., of the bombarded crystal lattice), and further configured for plasma pulsing to reduce the energy of the impinging ions with cryogenic wafer temperatures. Substrate temperatures of −50° C. or more are employed to reduce the susceptibility of a stop layer material to damage associated with ion impact. Ion energy is reduced to below the threshold where stop layer lattice atoms are displaced or ions are implanted into the bulk lattice. In embodiments, a plasma of an etchant gas having ion energies less than 10 eV are achieved through plasma pulsing, which when directed at the low temperature substrate may controllably etch ultra-thin material layers.
摘要翻译：超薄材料层被等离子体蚀刻，其中蚀刻系统被配置用于低温冷却衬底，以减少外来和固有停止层原子（例如，被轰击的晶格）的扩散系数，并进一步配置用于等离子体脉冲以降低用低温晶片温度冲击离子。使用-50℃以上的基板温度来降低停止层材料对与离子冲击有关的损伤的敏感性。离子能量降低到阈值以下，其中阻挡层晶格原子被置换或离子注入到体晶格中。在实施例中，具有小于10eV的离子能量的蚀刻剂气体的等离子体通过等离子脉冲实现，其在指向低温衬底时可以可控制地蚀刻超薄材料层。

7. 发明申请

US20090261276A1 METHOD AND APPARATUS FOR EXCIMER CURING 有权
标题翻译： EXCIMER固化的方法和装置
公开(公告)号：US20090261276A1
公开(公告)日：2009-10-22
申请号：US12107281
申请日：2008-04-22
申请人： Dmitry LUBOMIRSKY , Muhammad M. RASHEED , Ellie Y. YIEH
发明人： Dmitry LUBOMIRSKY , Muhammad M. RASHEED , Ellie Y. YIEH
IPC分类号： G21G5/00 , H01J9/00
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的装置。该装置包括具有壳体壁的壳体。电极配置在外壳内。管状体在电极周围。管状体包括外壁和内壁。至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

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