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1. 发明申请

US20130284374A1 HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY 有权
标题翻译：具有实时热区调节能力的高温静电切割机
公开(公告)号：US20130284374A1
公开(公告)日：2013-10-31
申请号：US13793512
申请日：2013-03-11
申请人： Dmitry LUBOMIRSKY , Jennifer Y. SUN , Senh THACH , Xing LIN , Michael D. WILLWERTH , Konstantin MAKHRATCHEV
发明人： Dmitry LUBOMIRSKY , Jennifer Y. SUN , Senh THACH , Xing LIN , Michael D. WILLWERTH , Konstantin MAKHRATCHEV
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , B23B31/28 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/68792
摘要： Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.
摘要翻译：本发明的实施例提供了用于在升高的温度下操作的静电卡盘。本发明的一个实施例提供了一种用于静电卡盘的电介质卡盘体。电介质卡盘体包括：基板支撑板，具有用于接收基板的顶表面和与顶表面相对的后表面;嵌入在基板支撑板中的电极;以及轴，其具有连接到基板的背面的第一端支撑板和与第一端相对的第二端。第二端构造成接触冷却基座并且向衬底支撑板提供温度控制。轴是中空的，具有封闭中心开口的侧壁，以及穿过侧壁形成并且从第一端延伸到第二端的两个或更多个通道。

2. 发明授权

US08270141B2 Electrostatic chuck with reduced arcing 有权
标题翻译：静电卡盘减少电弧
公开(公告)号：US08270141B2
公开(公告)日：2012-09-18
申请号：US12884967
申请日：2010-09-17
申请人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
发明人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
IPC分类号： H02T23/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译：本文提供了静电卡盘的实施例。在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定，沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

3. 发明申请

US20120024479A1 APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER 有权
标题翻译：用于控制过程室气体流量的装置
公开(公告)号：US20120024479A1
公开(公告)日：2012-02-02
申请号：US13015106
申请日：2011-01-27
申请人： DAVID PALAGASHVILI , MICHAEL D. WILLWERTH , JINGBAO LIU
发明人： DAVID PALAGASHVILI , MICHAEL D. WILLWERTH , JINGBAO LIU
IPC分类号： H01L21/00 , C23C16/458 , C23F1/08 , C23C16/455
CPC分类号： H01L21/68735 , C23C16/4412 , C23C16/45591 , C23C16/4585 , H01J37/3244 , H01J37/32633 , H01J37/32642 , Y10T137/85938
摘要： Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume.
摘要翻译：本文提供了用于控制处理室中气体流动的装置。在一些实施例中，用于控制处理室中的气体流动的装置，其具有设置在基板支撑件上方的处理室内的处理容积，以及设置在基板支撑件下方的处理室内的泵送体积可包括环形板衬底支撑件，靠近衬底支撑件的衬底支撑表面的水平面，其中环形板朝向处理室的内周表面径向向外延伸，以在环形板的外边缘和内周表面之间限定均匀的间隙，其中均匀间隙提供从处理体积到泵送体积的均匀流动路径。

4. 发明授权

US08075728B2 Gas flow equalizer plate suitable for use in a substrate process chamber 失效
标题翻译：气流平衡板，适用于衬底加工室
公开(公告)号：US08075728B2
公开(公告)日：2011-12-13
申请号：US12038887
申请日：2008-02-28
申请人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
发明人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
IPC分类号： C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：提供流量均衡器板用于衬底处理室。流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

5. 发明申请

US20110162803A1 CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION 有权
标题翻译：具有均匀流动和等离子体分布的室
公开(公告)号：US20110162803A1
公开(公告)日：2011-07-07
申请号：US12884978
申请日：2010-09-17
申请人： DAVID PALAGASHVILI , MICHAEL D. WILLWERTH , ALEX ERENSTEIN , JINGBAO LIU
发明人： DAVID PALAGASHVILI , MICHAEL D. WILLWERTH , ALEX ERENSTEIN , JINGBAO LIU
IPC分类号： C23F1/08 , B65D25/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32816 , H01J37/32844
摘要： Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.
摘要翻译：本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

6. 发明申请

US20110068082A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION 失效
标题翻译：在具有独立波形边缘过程气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20110068082A1
公开(公告)日：2011-03-24
申请号：US12954087
申请日：2010-11-24
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

7. 发明申请

US20130032478A1 LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER 有权
标题翻译：用于等离子体加工室的低斜边缘环
公开(公告)号：US20130032478A1
公开(公告)日：2013-02-07
申请号：US13649196
申请日：2012-10-11
申请人： Changhun Lee , Michael D. Willwerth , Hoan Nguyen
发明人： Changhun Lee , Michael D. Willwerth , Hoan Nguyen
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , H01L21/68735 , H01L21/68757
摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.
摘要翻译：提供了一种用于等离子体处理室的盖环的实施例。在一个实施例中，用于等离子体处理室的盖环包括由含钇（Y）的材料制成的环形主体。主体包括具有内定位环和外定位环的底表面。内定位环比外定位环更远离主体。主体包括具有主壁和由基本上水平的平台分开的次级壁的内径壁。身体还包括顶表面，其具有在顶点处会聚内倾斜表面的外倾斜顶表面。内部倾斜表面与垂直于身体中心线的线形成小于约70度的角度。

8. 发明申请

US20110120651A1 SHOWERHEAD ASSEMBLY WITH IMPROVED IMPACT PROTECTION 审中-公开
标题翻译：淋浴组件具有改进的冲击保护
公开(公告)号：US20110120651A1
公开(公告)日：2011-05-26
申请号：US12892036
申请日：2010-09-28
申请人： ALEX ERENSTEIN , MICHAEL D. WILLWERTH , DAVID PALAGASHVILI
发明人： ALEX ERENSTEIN , MICHAEL D. WILLWERTH , DAVID PALAGASHVILI
IPC分类号： B05B1/00 , C23F1/08 , C23C16/455
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32495
摘要： Showerhead assemblies with improved impact protection are provided herein. In some embodiments, a showerhead assembly includes a body having a plenum disposed therein, the body having a plurality of first holes extending from the plenum to a substrate facing surface of the body; a plate disposed on the substrate facing surface of the body and having a plurality of second holes formed therethrough, each second hole corresponding with a respective first hole of the body; and a lip extending from the body and circumscribing the plate, the lip extending beyond a chamber facing surface of the plate. In some embodiments, the showerhead assembly is disposed in the inner volume of a process chamber.
摘要翻译：本文提供了具有改进的冲击保护的喷头组件。在一些实施例中，喷头组件包括具有设置在其中的增压室的主体，所述主体具有从所述增压室延伸到所述主体的面向基板的表面的多个第一孔; 设置在所述主体的与所述基板对向的表面上并具有穿过其形成的多个第二孔的板，每个第二孔对应于所述主体的相应的第一孔; 以及从所述主体延伸并围绕所述板的唇缘，所述唇缘延伸超过所述板的面向腔室的表面。在一些实施例中，喷头组件设置在处理室的内部容积中。

9. 发明授权

US07879250B2 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection 有权
标题翻译：在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US07879250B2
公开(公告)日：2011-02-01
申请号：US11899613
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

10. 发明授权

US07777152B2 High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
标题翻译：高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘
公开(公告)号：US07777152B2
公开(公告)日：2010-08-17
申请号：US11671927
申请日：2007-02-06
申请人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
发明人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
IPC分类号： B23K9/02 , H01P5/08 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32706 , H03H1/0007
摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.
摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中环形线圈的外径与每个信封的内径大致相同。直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入结束和输出结束。每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子的电阻加热元件。

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