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    • 1. 发明授权
    • Over-voltage protection of integrated circuit I/O pins
    • 集成电路I / O引脚的过电压保护
    • US06970024B1
    • 2005-11-29
    • US10786370
    • 2004-02-24
    • Dirk ReeseTzung-Chin ChangChiakang SungKhai NguyenGopinath RanganXiaobao Wang
    • Dirk ReeseTzung-Chin ChangChiakang SungKhai NguyenGopinath RanganXiaobao Wang
    • H03K3/01H03K3/356H03K19/003
    • H03K3/356113H03K19/00315
    • Circuits, methods, and apparatus for protecting devices in an output stage from over-voltage conditions caused by high supply and input voltages. Embodiments provide over-voltage protection that operates over a range of voltage levels, and that can be optimized for performance at different voltage levels. An exemplary embodiment of the present invention uses stacked devices to protect n and p-channel output devices from excess supply and input voltages. These stacked devices are biased by voltages received at their gates. These gate voltages vary as a function of supply voltage to maintain performance. Other embodiments of the present invention provide a body bias switch that generates a bias for the bulk of p-channel output devices. This bias tracks the higher of a supply or input voltage, such that parasitic drain-to-bulk diodes do not conduct. A switch may be provided that shorts the bulk connection to VCC under appropriate conditions.
    • 用于保护输出级的器件免受由高电源和输入电压引起的过电压状态的电路,方法和装置。 实施例提供了在一定范围的电压电平上工作的过电压保护,并且可针对不同电压电平下的性能进行优化。 本发明的示例性实施例使用堆叠器件来保护n和p沟道输出器件免受过多的电源和输入电压的影响。 这些堆叠的器件被其栅极处接收的电压偏置。 这些栅极电压随着电源电压而变化,以保持性能。 本发明的其它实施例提供一种主体偏置开关,其产生用于大量p沟道输出装置的偏置。 该偏置跟踪电源或输入电压的较高,使得寄生漏极 - 体二极管不导通。 可以提供在适当条件下短路与VCC的大容量连接的开关。