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    • 8. 发明授权
    • Thin film ultrasound transducer
    • 薄膜超声波换能器
    • US09440258B2
    • 2016-09-13
    • US13812640
    • 2011-07-12
    • Mareike KleeRuediger MauczokHenri Marie Joseph BootsNico Maris Adriaan De WildBiju Kumar Sreedharan NairOlaf WunnickeWillem Franke PasveerDirk Van De LagemaatPeter Dirksen
    • Mareike KleeRuediger MauczokHenri Marie Joseph BootsNico Maris Adriaan De WildBiju Kumar Sreedharan NairOlaf WunnickeWillem Franke PasveerDirk Van De LagemaatPeter Dirksen
    • B06B1/06
    • H03H3/02B06B1/06B06B1/0622B06B1/0688H03H9/172
    • The present invention relates to a transducer (11) comprising—a membrane (31) configured to change shape in response to a force, the membrane (31) having a first major surface (16) and a second major surface (17), —a piezoelectric layer (18) formed over the first major surface (16) of the membrane (31), the piezoelectric layer (18) having an active portion, —first and second electrodes (19) in contact with the piezoelectric layer (18), wherein an electric field between the first and second electrodes (19) determines the mechanical movement of the piezoelectric layer (18), —support structures (40) at the second major surface (17) of the membrane (15) on adjacent sides of the active portion of the piezoelectric layer (18), at least part of the support structures (40) forming walls perpendicular, or at least not parallel, to the second major surface (17) of the membrane (31), so as to form a trench (41) of any shape underlying the active portion, so that an ultrasound transducer is obtained with a high output pressure at the support side than at the opposite side. The invention also relates to a method of forming such a transducer, and an array comprising at least one transducer of the like.
    • 本发明涉及一种换能器(11),其包括 - 被配置为响应于力而改变形状的膜(31),所述膜(31)具有第一主表面(16)和第二主表面(17), - 形成在膜(31)的第一主表面(16)上方的压电层(18),压电层(18)具有有源部分,与压电层(18)接触的第一和第二电极(19) ,其中所述第一和第二电极(19)之间的电场确定所述压电层(18)的机械运动, - 在所述膜(15)的相邻侧上的所述膜(15)的第二主表面(17)处支撑结构(40) 压电层(18)的有效部分,至少部分支撑结构(40)形成与膜(31)的第二主表面(17)垂直或至少不平行的壁,以便形成 在活动部分下方的任何形状的沟槽(41),使得超声波换能器 s在支撑侧的高输出压力获得,而不是在相对侧。 本发明还涉及一种形成这种换能器的方法,以及包括至少一个这样的换能器的阵列。