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    • 1. 发明授权
    • Differential-type voltage-controlled oscillator with low-frequency
stability compensation
    • 具有低频稳定补偿的差分式压控振荡器
    • US5635878A
    • 1997-06-03
    • US546406
    • 1995-10-20
    • Ding-Jen LiuYing-Tzung Wang
    • Ding-Jen LiuYing-Tzung Wang
    • H03B1/00H03B1/04H03B5/24H03K3/0231H03L7/099
    • H03B5/24H03K3/0231H03B2201/02H03B2202/042
    • A differential-type voltage-controlled oscillator (VCO) with low-frequency stability compensation is disclosed. The differential-type VCO comprises a voltage-to-current converter for converting an input voltage signal into a biasing current signal to control the frequency of the VCO output. The VCO further comprises a number of stages of differential amplifiers connected in cascade. Each of the stages of differential amplifiers includes a pair of differential input PMOS transistors, with each of the PMOS transistors connected to a pair of NMOS load transistors. Each of the pair of NMOS load transistors are connected in parallel. The VCO further comprises a number of stages of bias circuits connected in cascade. Each of the bias circuits is connected to a corresponding stage of the differential amplifiers for receiving the bias current generated by the voltage-to-current converter. Each of the stages of bias circuits comprises a current source for supplying a constant current to maintain the low-frequency voltage-frequency linearity of the output of the VCO, and a biasing PMOS transistor connected in parallel with said current source.
    • 公开了一种具有低频稳定性补偿的差分型压控振荡器(VCO)。 差分型VCO包括电压 - 电流转换器,用于将输入电压信号转换成偏置电流信号以控制VCO输出的频率。 VCO还包括级联连接的多级差分放大器。 差分放大器的每个级包括一对差分输入PMOS晶体管,每个PMOS晶体管连接到一对NMOS负载晶体管。 一对NMOS负载晶体管中的每一个并联连接。 VCO还包括级联连接的多级偏置电路。 每个偏置电路连接到差分放大器的相应级,用于接收由电压 - 电流转换器产生的偏置电流。 偏置电路的每个级包括用于提供恒定电流以维持VCO的输出的低频电压 - 频率线性度的电流源和与所述电流源并联连接的偏置PMOS晶体管。
    • 2. 发明授权
    • Method and apparatus for enabling fast clock phase locking in a phase-locked loop
    • 用于在锁相环中实现快速时钟相位锁定的方法和装置
    • US07263154B2
    • 2007-08-28
    • US10680636
    • 2003-10-07
    • Tse-Hsiang HsuDing-Jen LiuJong-Woei ChenChih-Cheng Chen
    • Tse-Hsiang HsuDing-Jen LiuJong-Woei ChenChih-Cheng Chen
    • H03D1/24H03L7/06
    • G11B20/10009G11B27/3027G11B2220/216G11B2220/2575H03L7/081H03L7/10
    • In a method and apparatus for enabling fast clock phase locking in a phase-locked loop, a sampling clock generator generates sampling clock signals in response to an oscillator output of the phase-locked loop. A detector unit samples an input digital signal to the phase-locked loop at clock edges of the sampling clock signals to obtain multiple sampling points of the input digital signal, and compares logic levels of each temporally adjacent pair of the sampling points to detect presence of a logic level transition in the input digital signal. A selector unit is controlled by the detector unit to select one of the sampling clock signals, which has one of the clock edges thereof defining an interval that was detected to have occurrence of the logic level transition in the input digital signal, and which is subsequently provided to the phase-locked loop as an input phase-locking clock signal.
    • 在用于在锁相环中实现快速时钟相位锁定的方法和装置中,采样时钟发生器响应于锁相环的振荡器输出产生采样时钟信号。 检测器单元在采样时钟信号的时钟边沿将输入数字信号采样到锁相环,以获得输入数字信号的多个采样点,并且比较每个时间上相邻的采样点对的逻辑电平,以检测 输入数字信号中的逻辑电平转换。 选择器单元由检测器单元控制,以选择一个采样时钟信号,其中一个采样时钟信号的时钟边沿之一限定了被检测为在输入数字信号中出现逻辑电平转换的间隔,随后 提供给锁相环作为输入锁相时钟信号。
    • 3. 发明授权
    • Bias circuit for virtual ground non-volatile memory array with bank
selector
    • 用于具有存储体选择器的虚拟地面非易失性存储器阵列的偏置电路
    • US5517448A
    • 1996-05-14
    • US303679
    • 1994-09-09
    • Ding-Jen Liu
    • Ding-Jen Liu
    • G11C16/04G11C11/34
    • G11C16/0491
    • A bias circuit for virtual ground non-volatile memory array with bank selector, utilizes static pull-up transistors connected respectively to all bit lines of the memory array. The gates of the static pull-up transistors are connected to a predetermined reference voltage for supplying a global bias voltage to the bit lines. Another predetermined reference voltage, acting as a local bias voltage, is supplied to a deselected virtual ground bit line which is adjacent to the selected data sense bit line. By these two bias techniques, the leakage current of the adjacent deselected "ON" memory cells is minimized; as a result, the stability of the current detector is largely enhanced; the probability of erroneous data reading is reduced; the operating voltage margin of the memory devices is enlarged; and the data accessing is expedited.
    • 用于具有存储体选择器的虚拟接地非易失性存储器阵列的偏置电路使用分别连接到存储器阵列的所有位线的静态上拉晶体管。 静态上拉晶体管的栅极连接到用于向位线提供全局偏置电压的预定参考电压。 作为局部偏置电压的另一预定参考电压被提供给与所选择的数据检测位线相邻的取消选择的虚拟接地位线。 通过这两种偏置技术,相邻的取消选择的“ON”存储单元的漏电流最小化; 结果,电流检测器的稳定性大大提高; 数据读取错误的概率降低; 存储器件的工作电压裕度被扩大; 并加快了数据访问。
    • 4. 发明授权
    • Sense amplifier
    • 感应放大器
    • US5396467A
    • 1995-03-07
    • US220248
    • 1994-03-30
    • Ding-Jen LiuJyh-Jen Cho
    • Ding-Jen LiuJyh-Jen Cho
    • G11C7/06G11C16/28G11C7/00
    • G11C7/062G11C16/28
    • A two-phase sense amplifier includes a data sensing circuitry including a presetting current detecting circuit for allowing the sense amplifier to be in a presetting phase when an X-decoder decodes an address of a selected word line of a selected memory cell and a Y-decoder decodes an address of a selected bit line of the selected memory cell and then for setting a voltage level of the selected bit line to be around a switching point and an evaluating current detecting circuit for allowing the sense amplifier to be in an evaluating phase after the voltage level of the selected bit line is around the switching point in order to sense a current in the selected cell for converting the current into a voltage output, a dummy cell circuitry electrically connected to the data sensing circuitry for providing a reference voltage to the data sensing circuitry, and a differential amplifier electrically connected to the data sensing circuitry and the dummy cell circuitry for accepting and comparing the voltage output and the reference voltage to sense data of the selected memory cell. Such a sense amplifier can have a relatively high sensing speed.
    • 一个双相位读出放大器包括一个数据检测电路,包括一个预置电流检测电路,用于当X解码器解码所选择的存储单元的选定字线的地址时,允许读出放大器处于预设阶段, 解码器对所选存储单元的所选位线的地址进行解码,然后将所选位线的电压电平设置在开关点周围,以及评估电流检测电路,用于允许读出放大器处于评估阶段 所选位线的电压电平在开关点周围,以便检测所选择的单元中的电流以将电流转换成电压输出;电连接到数据感测电路的虚设单元电路,用于向基准电压提供参考电压 数据感测电路和电连接到数据感测电路的差分放大器和用于接受和比较的虚拟单元电路 g电压输出和参考电压以检测所选存储单元的数据。 这种感测放大器可以具有相对高的感测速度。