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    • 7. 发明授权
    • Integrated circuitry
    • 集成电路
    • US08207563B2
    • 2012-06-26
    • US11638931
    • 2006-12-13
    • Cem BasceriGurtej S. Sandhu
    • Cem BasceriGurtej S. Sandhu
    • H01L27/108
    • H01L28/91H01L27/10817H01L27/10852
    • A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.
    • 形成多个电容器的方法包括提供包括侧壁的多个电容器电极。 多个电容器电极至少部分地由与侧壁接合的保持结构支撑,保持结构包括透液材料。 电容器电介质材料沉积在电容器电极上,通过保持结构的流体可渗透材料,其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。 电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上,有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。 还考虑了与制造方法无关的集成电路。
    • 8. 发明申请
    • Mixed Composition Interface Layer and Method of Forming
    • 混合组合界面层和成型方法
    • US20120120549A1
    • 2012-05-17
    • US13293778
    • 2011-11-10
    • Cem BasceriGurtej S. Sandhu
    • Cem BasceriGurtej S. Sandhu
    • H01G9/00
    • H01L21/0228C23C16/029C23C16/18C23C16/405C23C16/45525H01L21/02183H01L21/28562H01L21/31604H01L21/31683H01L28/40H01L28/60Y10T428/24917Y10T428/24926
    • An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
    • 界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层,所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。 包含第二化学元素的第二层可以形成在界面层上。 第一层可能基本上不包含第二化学元素,第二层可能基本上不含有第一化学元素,或两者都不包含。 装置可以包括含有第一化学元素的第一层,在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。 界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。
    • 10. 再颁专利
    • Mixed composition interface layer and method of forming
    • 混合组成界面层和成型方法
    • USRE43025E1
    • 2011-12-13
    • US12566533
    • 2009-09-24
    • Cem BasceriGurtej S. Sandhu
    • Cem BasceriGurtej S. Sandhu
    • B32B9/00
    • H01L21/0228C23C16/029C23C16/18C23C16/405C23C16/45525H01L21/02183H01L21/28562H01L21/31604H01L21/31683H01L28/40H01L28/60Y10T29/417Y10T428/24917Y10T428/24926
    • An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
    • 界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层,所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。 包含第二化学元素的第二层可以形成在界面层上。 第一层可能基本上不包含第二化学元素,第二层可能基本上不含有第一化学元素,或两者都不包含。 装置可以包括含有第一化学元素的第一层,在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。 界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。