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1. 发明申请

US20130341729A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体器件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20130341729A1
公开(公告)日：2013-12-26
申请号：US13812181
申请日：2011-06-20
申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
发明人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
IPC分类号： H01L27/06
CPC分类号： H01L27/1203 , G11C11/412 , G11C16/0408 , H01L21/8249 , H01L21/84 , H01L23/535 , H01L27/0623 , H01L27/0705 , H01L27/092 , H01L27/1025 , H01L27/1026 , H01L27/11 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0847 , H01L29/0895 , H01L29/1004 , H01L29/1033 , H01L29/66825 , H01L29/66833 , H01L29/7311 , H01L29/788 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
摘要翻译：提供了与MOSFET相比具有与常规MOSFET相同的可集成性的半导体元件，即在室温下S值小于60mV /阶的优异的开关特性。组合MOSFET和具有隧道结的隧道双极晶体管配置了一个半导体元件，其相对于栅极电压的变化（S值小于60mV /次）显示出漏极电流的突然变化，即使在低电压。

2. 发明授权

US09209171B2 Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device 有权
标题翻译：半导体装置及其制造方法以及非易失性半导体存储装置
公开(公告)号：US09209171B2
公开(公告)日：2015-12-08
申请号：US13812181
申请日：2011-06-20
申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
发明人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
IPC分类号： H01L27/06 , H01L21/8249 , H01L21/84 , H01L27/07 , H01L27/092 , H01L27/11 , H01L27/115 , H01L27/12 , H01L29/66 , H01L29/788 , H01L29/792 , G11C16/04 , H01L27/102 , G11C11/412
CPC分类号： H01L27/1203 , G11C11/412 , G11C16/0408 , H01L21/8249 , H01L21/84 , H01L23/535 , H01L27/0623 , H01L27/0705 , H01L27/092 , H01L27/1025 , H01L27/1026 , H01L27/11 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0847 , H01L29/0895 , H01L29/1004 , H01L29/1033 , H01L29/66825 , H01L29/66833 , H01L29/7311 , H01L29/788 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
摘要翻译：提供了与MOSFET相比具有与常规MOSFET相同的可集成性的半导体元件，即在室温下S值小于60mV /阶的优异的开关特性。组合MOSFET和具有隧道结的隧道双极晶体管配置了一个半导体元件，其相对于栅极电压的变化（S值小于60mV /次）显示出漏极电流的突然变化，即使在低电压。

3. 发明授权

US07890898B2 Method for semiconductor circuit 失效
标题翻译：半导体电路方法
公开(公告)号：US07890898B2
公开(公告)日：2011-02-15
申请号：US12024107
申请日：2008-01-31
申请人： Hiroyuki Yoshimoto , Nobuyuki Sugii , Shinichi Saito , Digh Hisamoto
发明人： Hiroyuki Yoshimoto , Nobuyuki Sugii , Shinichi Saito , Digh Hisamoto
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Capacity-gate voltage characteristics of a field-effect transistor having plural gates are measured against a voltage change in each one of the gates for an inverted MOSFET and for an accumulated MOSFET, respectively. These measurements together with numerical simulations provided from a model for quantum effects are used to determine flat band voltages between the plural gates and a channel. Next, an effective normal electric field is calculated as a vector line integral by using a set of flat band voltages for the measured capacity as a lower integration limit. Lastly, mobility depending on the effective normal electric field is calculated from current-gate voltage characteristic measurements and capacity measurements in a source-drain path, and the calculated mobility is substituted into an equation for a current-voltage curve between source and drain.
摘要翻译：针对反向MOSFET的栅极和积累的MOSFET中的每一个的电压变化分别测量具有多个栅极的场效应晶体管的容量栅极电压特性。这些测量结果与从量子效应模型提供的数值模拟一起用于确定多个门和通道之间的平带电压。接下来，通过使用一组用于测量容量的平带电压作为下积分极限，计算有效正常电场作为矢量线积分。最后，根据源极 - 漏极路径中的电流 - 栅极电压特性测量和电容测量值计算出有效正常电场的迁移率，并将计算的迁移率代入源极和漏极之间的电流 - 电压曲线的方程式。

4. 发明授权

US08883313B2 Modified polytetrafluoroethylene powder and method for producing tetrafluoroethylene polymer 有权
标题翻译：改性聚四氟乙烯粉末及四氟乙烯聚合物的制造方法
公开(公告)号：US08883313B2
公开(公告)日：2014-11-11
申请号：US11547557
申请日：2005-04-04
申请人： Yoshinori Nanba , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira , Makoto Ono , Takahiro Taira , Hiroyuki Yoshimoto
发明人： Yoshinori Nanba , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira , Makoto Ono , Takahiro Taira , Hiroyuki Yoshimoto
IPC分类号： C08F259/08 , C08F214/26 , C08F14/26 , H05K1/03 , H05K1/02
CPC分类号： C08F214/26 , C08F14/26 , C08F214/262 , C08F259/08 , H05K1/024 , H05K1/0373 , H05K2201/015 , H05K2201/0212 , Y10T428/3154 , C08F2/00
摘要： The present invention provides a polytetrafluoroethylene powder having moldability/processability as well as electrical characteristics in microwave bands. The present invention is a modified polytetrafluoroethylene powder which has (1) a dielectric loss tangent at 12 GHz of not higher than 2.0×10−4 and (2) a cylinder extrusion pressure of not higher than 45 MPa at a reduction ratio of 1600.
摘要翻译：本发明提供了具有成型性/加工性以及微波带的电特性的聚四氟乙烯粉末。本发明是一种改性聚四氟乙烯粉末，其具有（1）在12GHz下的介电损耗角正切不高于2.0×10-4，（2）压缩比为1600时的气缸挤压压力不高于45MPa。

5. 发明授权

US08643117B2 Semiconductor device, method for manufacturing same, and semiconductor storage device 有权
标题翻译：半导体装置及其制造方法以及半导体存储装置
公开(公告)号：US08643117B2
公开(公告)日：2014-02-04
申请号：US13145108
申请日：2010-01-18
申请人： Ryuta Tsuchiya , Nobuyuki Sugii , Yusuke Morita , Hiroyuki Yoshimoto , Takashi Ishigaki , Shinichiro Kimura
发明人： Ryuta Tsuchiya , Nobuyuki Sugii , Yusuke Morita , Hiroyuki Yoshimoto , Takashi Ishigaki , Shinichiro Kimura
IPC分类号： H01L21/70
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/41783 , H01L29/665 , H01L29/78648
摘要： In an SOI-MISFET that operates with low power consumption at a high speed, an element area is reduced. While a diffusion layer region of an N-conductivity type MISFET region of the SOI type MISFET and a diffusion layer region of a P-conductivity type MISFET region of the SOI type MISFET are formed as a common region, well diffusion layers that apply substrate potentials to the N-conductivity type MISFET region and the P-conductivity type MISFET region are separated from each other by an STI layer. The diffusion layer regions that are located in the N- and P-conductivity type MISFET regions) and serve as an output portion of a CMISFET are formed as a common region and directly connected by silicified metal so that the element area is reduced.
摘要翻译：在以高功率低功耗工作的SOI-MISFET中，元件面积减小。虽然SOI型MISFET的N导电型MISFET区域的扩散层区域和SOI型MISFET的P导电型MISFET区域的扩散层区域形成为公共区域，但是施加衬底电位的阱扩散层通过STI层将N导电型MISFET区域和P导电型MISFET区域相互分离。位于N和P导电型MISFET区域中的扩散层区域）作为CMISFET的输出部分形成为公共区域，并通过硅化金属直接连接，使元件面积减小。

6. 发明申请

US20070009727A1 Mixed polytetrafluoroethylene powder, polytetrafluoroethylene porous shaped body, methods for producing those, polytetrafluoroethylene porous foam shaped body, and product for high-frequency signal transmission 审中-公开
标题翻译：混合聚四氟乙烯粉末，聚四氟乙烯多孔体，其制造方法，聚四氟乙烯多孔泡沫体，以及用于高频信号传输的产品
公开(公告)号：US20070009727A1
公开(公告)日：2007-01-11
申请号：US10569455
申请日：2004-08-25
申请人： Yasuhiko Sawada , Hiroyuki Yoshimoto , Shunji Kasai , Shuji Tagashira
发明人： Yasuhiko Sawada , Hiroyuki Yoshimoto , Shunji Kasai , Shuji Tagashira
IPC分类号： B27J5/00 , B32B3/26
CPC分类号： C08J9/24 , C08J2327/18 , H01B3/445 , Y10T428/249953
摘要： The present invention provides a porous polytetrafluoroethylene molded article, wherein the specific gravity of the above porous polytetrafluoroethylene molded article is 0.9 to 2.0 and the aspect ratio of a void formed within the above molded article is not lower than 1 but not higher than 3.
摘要翻译：本发明提供一种多孔聚四氟乙烯成型体，其中，上述多孔聚四氟乙烯成型体的比重为0.9〜2.0，上述成型品中形成的空隙的纵横比为1以上3以下。

7. 发明授权

US08466236B2 Fluororesin composition, fluororesin molded article and method for producing the same 有权
标题翻译：氟树脂组合物，氟树脂成型体及其制造方法
公开(公告)号：US08466236B2
公开(公告)日：2013-06-18
申请号：US12527510
申请日：2008-02-18
申请人： Hiroyuki Yoshimoto , Hirokazu Yukawa , Yasuhiko Sawada , Taku Yamanaka , Masamichi Sukegawa
发明人： Hiroyuki Yoshimoto , Hirokazu Yukawa , Yasuhiko Sawada , Taku Yamanaka , Masamichi Sukegawa
IPC分类号： C08L27/16 , C08L27/18 , C08L27/00
CPC分类号： B29B13/007 , B29K2027/12 , B29K2027/18 , C08L27/16 , C08L27/18 , C08L2205/02 , C08L2666/04
摘要： The invention provides a fluororesin composition capable of providing a molded article having low relative dielectric constant, excellent in a temperature stability and causing only small transmission losses. The invention is a fluororesin composition wherein a rate of change in relative dielectric constant between 25° C. and 80° C. of a molded article produced therefrom under a standard condition is not greater than 0.2%.
摘要翻译：本发明提供一种氟树脂组合物，其能够提供具有低相对介电常数的模制品，其温度稳定性优异并且仅导致较小的传输损失。本发明是一种氟树脂组合物，其中在标准条件下由其制备的模塑制品在25℃和80℃之间的相对介电常数的变化率不大于0.2％。

8. 发明授权

US08183635B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08183635B2
公开(公告)日：2012-05-22
申请号：US12756451
申请日：2010-04-08
申请人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
发明人： Nobuyuki Sugii , Ryuta Tsuchiya , Shinichiro Kimura , Takashi Ishigaki , Yusuke Morita , Hiroyuki Yoshimoto
IPC分类号： H01L21/00
CPC分类号： H01L27/1203 , H01L21/76283
摘要： A technique to be applied to a semiconductor device for achieving low power consumption by improving a shape at a boundary portion of a shallow trench and an SOI layer of an SOI substrate. A position (SOI edge) at which a main surface of a silicon substrate and a line extended along a side surface of an SOI layer are crossed is recessed away from a shallow-trench isolation more than a position (STI edge) at which a line extended along a sidewall of a shallow trench and a line extended along the main surface of the silicon substrate are crossed, and a corner of the silicon substrate at the STI edge has a curved surface.
摘要翻译：通过改善在SOI衬底的浅沟槽和SOI层的边界部分的形状来实现低功耗的半导体器件的技术。硅衬底的主表面和沿着SOI层的侧表面延伸的线交叉的位置（SOI边缘）比浅沟槽隔离更远离位于（STI边缘）的位置（STI边缘），在该位置处沿着浅沟槽的侧壁延伸并且沿着硅衬底的主表面延伸的线交叉，并且在STI边缘处的硅衬底的拐角具有弯曲表面。

9. 发明申请

US20110097984A1 Variable duct apparatus 有权
标题翻译：可变风管装置
公开(公告)号：US20110097984A1
公开(公告)日：2011-04-28
申请号：US12923886
申请日：2010-10-13
申请人： Masami Hasegawa , Hiroyuki Yoshimoto
发明人： Masami Hasegawa , Hiroyuki Yoshimoto
IPC分类号： B60H1/34
CPC分类号： B60K11/085 , Y02T10/88
摘要： A variable duct apparatus that controls outside air flowing in to a radiator includes a variable louver that is provided so as to extend in the vehicle width direction between a grille opening and a radiator of a vehicle, and regulates the amount of outside air admitted to the radiator, a lower louver that is provided so as to extend in the vehicle width direction between an air inlet and the radiator, and regulates the amount of outside air admitted to the radiator, and a link mechanism that coordinates and synchronizes the variable louver and the lower louver with each other, and interrupts the coordination between the variable louver and the lower louver upon application of an external force to the lower louver to thereby permit swinging of the lower louver.
摘要翻译：控制流入散热器的外部空气的可变风道装置包括：可变百叶窗，其设置成在车辆宽度方向上在车辆的格栅开口和散热器之间延伸，并且调节进入到所述车辆的外部空气的量散热器，设置成在空气入口和散热器之间沿车宽方向延伸的下百叶窗，并且调节进入散热器的外部空气的量，以及将可变百叶窗和下百叶窗，并且在向下百叶窗施加外力时中断可变百叶窗和下百叶窗之间的协调，从而允许下百叶窗的摆动。

10. 发明授权

US06987224B2 Polytetrafluoroethylene mixed powder used for insulation of product for high frequency signal transmission and product for high frequency signal transmission using the same 有权
标题翻译：聚四氟乙烯混合粉末用于高频信号传输产品的绝缘，产品用于高频信号传输使用
公开(公告)号：US06987224B2
公开(公告)日：2006-01-17
申请号：US10311063
申请日：2001-05-29
申请人： Katsutoshi Yamamoto , Hiroyuki Yoshimoto , Kazuo Ishiwari , Shinichi Yano
发明人： Katsutoshi Yamamoto , Hiroyuki Yoshimoto , Kazuo Ishiwari , Shinichi Yano
IPC分类号： H01B7/34
CPC分类号： H05K1/0373 , C08L27/18 , C08L2205/02 , H01B3/445 , H05K1/024 , H05K2201/015 , H05K2201/0212 , C08L2666/04
摘要： A polytetrafluoroethylene mixed powder, which is obtained by mixing low molecular weight polytetrafluoroetylene powder and high molecular weight polytetrafluoroethylene powder obtained by emulsion polymerization of tetrafluoroethylene, wherein the low molecular weight polytetrafluoroetylene powder has a number average molecular weight of 1,000,000±500,000 and a maximum peak temperature of 327±5° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter, the high molecular weight polytetrafluoroetylene powder has a number average molecular weight of 4,500,000±1,000,000 and a maximum peak temperature of 340±7° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter, and the mixed powder has evident peak temperatures of 327±5° C. and 340±7° C. in the endothermic curve appearing on the crystalline melting curve obtained by using a differential scanning calorimeter.
摘要翻译：通过混合低分子量聚四氟乙烯粉末和通过四氟乙烯的乳液聚合获得的高分子量聚四氟乙烯粉末获得的聚四氟乙烯混合粉末，其中低分子量聚四氟乙烯粉末的数均分子量为1,000,000±500,000，最大峰值温度在通过使用差示扫描量热计获得的结晶熔融曲线上出现的吸热曲线中为327±5℃，高分子量聚四氟乙烯粉末的数均分子量为4,500,000±1,000,000，最大峰值温度为340±7 在通过使用差示扫描量热计获得的结晶熔融曲线上出现的吸热曲线中，混合粉末在出现在吸热曲线上的吸热曲线中具有327±5℃和340±7℃的明显峰值温度通过使用差示扫描获得的结晶熔解曲线安瓿量热仪

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