专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09346903B2 Modified polytetrafluoroethylene fine powder and modified polytetrafluoroethylene molded product 有权
标题翻译：改性聚四氟乙烯细粉和改性聚四氟乙烯成型品
公开(公告)号：US09346903B2
公开(公告)日：2016-05-24
申请号：US11667443
申请日：2005-11-16
申请人： Takahiro Taira , Hiroyuki Yoshimoto , Taketo Kato , Yasuhiko Sawada
发明人： Takahiro Taira , Hiroyuki Yoshimoto , Taketo Kato , Yasuhiko Sawada
IPC分类号： C08F214/26 , C08F259/08 , C08L51/00
CPC分类号： C08F214/262 , C08F214/26 , C08F259/08 , C08L51/003 , Y10T428/1352 , C08L2666/02
摘要： The present invention provides a modified polytetrafluoroethylene fine powder which can be processed into molded articles high in thermal stability, chemical resistance and transparency and for which the extrusion pressure can be lowered. The present invention is a modified polytetrafluoroethylene fine powder, wherein the cylinder extrusion pressure at a reduction ratio of 1600 is not higher than 50 MPa and the haze value of molded article a for measurement formed therefrom is not higher than 60.
摘要翻译：本发明提供一种可以加工成热稳定性，耐化学性和透明性高的成型体的挤出压力降低的改性聚四氟乙烯细粉末。本发明是一种改性聚四氟乙烯细粉，其中压缩比为1600时的气缸挤压压力不高于50MPa，由此形成的用于测量的模塑制品a的雾度值不高于60。

2. 发明授权

US09209171B2 Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device 有权
标题翻译：半导体装置及其制造方法以及非易失性半导体存储装置
公开(公告)号：US09209171B2
公开(公告)日：2015-12-08
申请号：US13812181
申请日：2011-06-20
申请人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
发明人： Digh Hisamoto , Shinichi Saito , Akio Shima , Hiroyuki Yoshimoto
IPC分类号： H01L27/06 , H01L21/8249 , H01L21/84 , H01L27/07 , H01L27/092 , H01L27/11 , H01L27/115 , H01L27/12 , H01L29/66 , H01L29/788 , H01L29/792 , G11C16/04 , H01L27/102 , G11C11/412
CPC分类号： H01L27/1203 , G11C11/412 , G11C16/0408 , H01L21/8249 , H01L21/84 , H01L23/535 , H01L27/0623 , H01L27/0705 , H01L27/092 , H01L27/1025 , H01L27/1026 , H01L27/11 , H01L27/11521 , H01L27/11568 , H01L29/0649 , H01L29/0804 , H01L29/0821 , H01L29/0847 , H01L29/0895 , H01L29/1004 , H01L29/1033 , H01L29/66825 , H01L29/66833 , H01L29/7311 , H01L29/788 , H01L29/792 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.
摘要翻译：提供了与MOSFET相比具有与常规MOSFET相同的可集成性的半导体元件，即在室温下S值小于60mV /阶的优异的开关特性。组合MOSFET和具有隧道结的隧道双极晶体管配置了一个半导体元件，其相对于栅极电压的变化（S值小于60mV /次）显示出漏极电流的突然变化，即使在低电压。

3. 发明申请

US20100258872A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100258872A1
公开(公告)日：2010-10-14
申请号：US12756451
申请日：2010-04-08
申请人： Nobuyuki SUGII , Ryuta TSUCHIYA , Shinichiro KIMURA , Takashi ISHIGAKI , Yusuke MORITA , Hiroyuki YOSHIMOTO
发明人： Nobuyuki SUGII , Ryuta TSUCHIYA , Shinichiro KIMURA , Takashi ISHIGAKI , Yusuke MORITA , Hiroyuki YOSHIMOTO
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L27/1203 , H01L21/76283
摘要： A technique to be applied to a semiconductor device for achieving low power consumption by improving a shape at a boundary portion of a shallow trench and an SOI layer of an SOI substrate. A position (SOI edge) at which a main surface of a silicon substrate and a line extended along a side surface of an SOI layer are crossed is recessed away from a shallow-trench isolation more than a position (STI edge) at which a line extended along a sidewall of a shallow trench and a line extended along the main surface of the silicon substrate are crossed, and a corner of the silicon substrate at the STI edge has a curved surface.
摘要翻译：通过改善在SOI衬底的浅沟槽和SOI层的边界部分的形状来实现低功耗的半导体器件的技术。硅衬底的主表面和沿着SOI层的侧表面延伸的线交叉的位置（SOI边缘）比浅沟槽隔离更远离位于（STI边缘）的位置（STI边缘），在该位置处沿着浅沟槽的侧壁延伸并且沿着硅衬底的主表面延伸的线交叉，并且在STI边缘处的硅衬底的拐角具有弯曲表面。

4. 发明授权

US07732531B2 Molded object process for producing the same product for high-frequency signal transmission and high-frequency transmission cable 有权
标题翻译：用于生产高频信号传输和高频传输电缆的同一产品的成型对象工艺
公开(公告)号：US07732531B2
公开(公告)日：2010-06-08
申请号：US10569452
申请日：2004-08-25
申请人： Hiroyuki Yoshimoto , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira
发明人： Hiroyuki Yoshimoto , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira
IPC分类号： C08L27/12 , C08L23/00 , C08L23/04 , C08L23/10 , C08F6/20
CPC分类号： H01B3/441 , C08L23/06 , H01B3/445 , H05K1/0353 , C08L27/18
摘要： The present invention provides a molded article comprising a polytetrafluoroethylene resin (A) and a thermoplastic resin (B) having a melting point of not lower than 100° C. but lower than 322° C., wherein the maximum peak temperature of the endothermic curve appearing on the crystal melting curve of the above polytetrafluoroethylene resin (A) as measured by a differential scanning calorimeter is higher by at least 3° C. than the maximum peak temperature of the endothermic curve appearing on the crystal melting curve of the above polytetrafluoroethylene resin (A) after heating to a temperature of not lower than 340° C. as measured by the differential scanning calorimeter.
摘要翻译：本发明提供一种包含聚四氟乙烯树脂（A）和熔点不低于100℃但低于322℃的热塑性树脂（B）的模塑制品，其中吸热曲线的最大峰值温度出现在通过差示扫描量热计测量的上述聚四氟乙烯树脂（A）的晶体熔融曲线上比在上述聚四氟乙烯树脂的晶体熔解曲线上出现的吸热曲线的最大峰值温度高至少3℃ （A），通过差示扫描量热计测定，加热至不低于340℃的温度。

5. 发明申请

US20090132974A1 METHOD FOR SEMICONDUCTOR CIRCUIT 失效
标题翻译：半导体电路方法
公开(公告)号：US20090132974A1
公开(公告)日：2009-05-21
申请号：US12024107
申请日：2008-01-31
申请人： Hiroyuki YOSHIMOTO , Nobuyuki Sugii , Shinichi Saito , Digh Hisamoto
发明人： Hiroyuki YOSHIMOTO , Nobuyuki Sugii , Shinichi Saito , Digh Hisamoto
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： Capacity-gate voltage characteristics of a field-effect transistor having plural gates are measured against a voltage change in each one of the gates for an inverted MOSFET and for an accumulated MOSFET, respectively. These measurements together with numerical simulations provided from a model for quantum effects are used to determine flat band voltages between the plural gates and a channel. Next, an effective normal electric field is calculated as a vector line integral by using a set of flat band voltages for the measured capacity as a lower integration limit. Lastly, mobility depending on the effective normal electric field is calculated from current-gate voltage characteristic measurements and capacity measurements in a source-drain path, and the calculated mobility is substituted into an equation for a current-voltage curve between source and drain.
摘要翻译：针对反向MOSFET的栅极和积累的MOSFET中的每一个的电压变化分别测量具有多个栅极的场效应晶体管的容量栅极电压特性。这些测量结果与从量子效应模型提供的数值模拟一起用于确定多个门和通道之间的平带电压。接下来，通过使用一组用于测量容量的平带电压作为下积分极限，计算有效正常电场作为矢量线积分。最后，根据源极 - 漏极路径中的电流 - 栅极电压特性测量和电容测量值计算出有效正常电场的迁移率，并将计算的迁移率代入源极和漏极之间的电流 - 电压曲线的方程式。

6. 发明授权

US07435466B2 Polytetrafluoroethylene-based-resin tube and production method thereof 有权
标题翻译：聚四氟乙烯基树脂管及其制备方法
公开(公告)号：US07435466B2
公开(公告)日：2008-10-14
申请号：US10830394
申请日：2004-04-23
申请人： Hiroyuki Yoshimoto , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira
发明人： Hiroyuki Yoshimoto , Yasuhiko Sawada , Shunji Kasai , Shuji Tagashira
IPC分类号： B29D22/00 , B32B1/08
CPC分类号： A61L29/041 , F16L9/127 , Y10T428/139 , Y10T428/1393 , C08L27/18
摘要： It is an object of the present invention to provide a polytetrafluoroethylene-based-resin tube high in longitudinal tensile strength and a method of producing the same.The present invention provides a polytetrafluoroethylene-based-resin tube characterized in that the tensile strength thereof in the longitudinal direction is not lower than 60 MPa.
摘要翻译：本发明的目的是提供一种高纵向拉伸强度的聚四氟乙烯基树脂管及其制造方法。本发明提供一种聚四氟乙烯系树脂管，其特征在于，其长度方向的拉伸强度为60MPa以上。

7. 发明授权

US07387834B2 Polytetrafluoroethylene fine powder of particular specific standard gravity, polytetrafluoroethylene formed article prepared from the same and method for preparation of the same 有权
标题翻译：聚四氟乙烯细粉特别具体标准重力，聚四氟乙烯制成的制品与制备方法相同
公开(公告)号：US07387834B2
公开(公告)日：2008-06-17
申请号：US10485352
申请日：2002-08-01
申请人： Tetsuo Shimizu , Michio Asano , Makoto Ono , Yoshinori Nanba , Shunji Kasai , Shinichi Yano , Hiroyuki Yoshimoto
发明人： Tetsuo Shimizu , Michio Asano , Makoto Ono , Yoshinori Nanba , Shunji Kasai , Shinichi Yano , Hiroyuki Yoshimoto
IPC分类号： B32B5/16 , B05D7/00
CPC分类号： C08J3/12 , C08J2327/18 , Y10T428/2991 , Y10T428/3154
摘要： The present invention provides a polytetrafluoroethylene molded article, particularly a PTFE molded article for high-frequency insulation, which is excellent in various electric properties and mechanical properties in a high frequency range of 3 to 30 GHz. The present invention also provides PTFE fine powder, which is excellent in extrusion moldability and capable of providing the molded article, and a process for preparing the same. More specifically, the present invention relates to a polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225, which is obtained by contacting polytetrafluoroethylene fine powder having a standard specific gravity of 2.180 to 2.225 with a fluorine radical source, wherein tanδ at 12 GHz of a film comprising the powder, which is obtained by cooling at 5 to 50° C./second after baking, is at most 2.0×10−4.
摘要翻译：本发明提供一种聚四氟乙烯模塑制品，特别是用于高频绝缘的PTFE模塑制品，其在3至30GHz的高频范围内具有优异的各种电性能和机械性能。本发明还提供挤出成型性优异且能够提供成形品的PTFE细粉及其制备方法。更具体地说，本发明涉及通过使具有2.180至2.225标准比重的聚四氟乙烯细粉与氟根源接触而获得的标准比重为2.180至2.225的聚四氟乙烯细粉，其中12GHz处的tandelta 包含通过在烘烤后以5至50℃/秒冷却获得的粉末的薄膜的含量为至多2.0×10 -4。

8. 发明授权

US07129298B2 Tetrafluoroethylene based resin molding material excellent in high frequency electric characteristics 有权
标题翻译：四氟乙烯基树脂成型材料具有优异的高频电特性
公开(公告)号：US07129298B2
公开(公告)日：2006-10-31
申请号：US10333821
申请日：2001-08-02
申请人： Makoto Ono , Michio Asano , Yoshinori Nanba , Shunji Kasai , Hiroyuki Yoshimoto , Shinichi Yano , Tetsuo Shimizu
发明人： Makoto Ono , Michio Asano , Yoshinori Nanba , Shunji Kasai , Hiroyuki Yoshimoto , Shinichi Yano , Tetsuo Shimizu
IPC分类号： C08F14/26
CPC分类号： C09D127/18 , C08F259/08 , C08L27/18 , Y10T428/3154 , C08F214/18 , C08F214/28
摘要： The present invention provides a TFE resin molding material which has electric characteristics, particularly low dielectric dissipation factor, in a microwave area, can also lower extrusion pressure as the material is of low molecular weight and can provide a molded article excellent in surface smoothness. The material is especially useful as a coating material for a coaxial cable for equipment in which microwave is used, including satellite transmitting equipment and a cell phone base station. A tetrafluoroethylene resin molding material excellent in high frequency electric characteristics, which provides a molded article having a dielectric constant of at most 2.2 and a dielectric dissipation factor of at most 1.60×10−4 under 12 GHz, and a standard specific gravity of at least 2.192 and less than 2.3 is provided. As the tetrafluoroethylene resin, a tetrafluoroethylene homopolymer or a copolymer of 99.9 to 99.9999% by mole of tetrafluoroethylene and 0.0001 to 0.1% by mole of a specific fluoromonomer is used.
摘要翻译：本发明提供一种在微波区域具有电特性，特别是低介电损耗因数的TFE树脂成型材料，还可以降低挤出压力，因为该材料具有低分子量，并且可提供表面平滑性优异的成型体。该材料作为用于其中使用微波的设备的同轴电缆的涂层材料是特别有用的，包括卫星发射设备和蜂窝电话基站。一种高频电特性优异的四氟乙烯树脂成型材料，其提供介电常数为2.2以下的介电损耗因数和12GHz以下的1.60×10 -4以下的介电损耗因数，提供了至少2.192和小于2.3的标准比重。作为四氟乙烯树脂，使用四氟乙烯均聚物或99.9〜99.9999摩尔％的四氟乙烯和0.0001〜0.1摩尔％的特定含氟单体的共聚物。

9. 发明授权

US5728412A Alcohol acetyltransferase genes and use thereof 失效
标题翻译：醇乙酰转移酶基因及其用途
公开(公告)号：US5728412A
公开(公告)日：1998-03-17
申请号：US465334
申请日：1995-06-05
申请人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
发明人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
IPC分类号： C12G1/02 , C12C11/00 , C12C11/02 , C12G1/022 , C12G3/02 , C12N1/19 , C12N9/10 , C12N15/09 , C12N15/54 , C12R1/865 , A23L1/10 , A23L1/28 , C07H21/04 , C12N1/00 , C12N1/18 , C12N15/63
CPC分类号： C12C5/004 , C12C11/00 , C12C11/003 , C12C11/02 , C12C12/004 , C12C12/006 , C12C5/026 , C12G1/0203 , C12N9/1029
摘要： This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene, This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.
摘要翻译：本发明公开了一种醇乙酰转移酶（“AATase”），AATase编码基因和由于用AATase编码基因转化而具有改进的酯生产能力的酵母。本发明还提供一种生产具有使用转化的酵母富集酯味。

10. 发明授权

US5686284A Alcohol acetyltransferase genes and use thereof 失效
公开(公告)号：US5686284A
公开(公告)日：1997-11-11
申请号：US461621
申请日：1995-06-05
申请人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
发明人： Toshio Fujii , Akihiro Iwamatsu , Hiroyuki Yoshimoto , Toshitaka Minetoki , Takayuki Bogaki , Naoshi Nagasawa
IPC分类号： C12G1/02 , C12C11/00 , C12C11/02 , C12G1/022 , C12G3/02 , C12N1/19 , C12N9/10 , C12N15/09 , C12N15/54 , C12R1/865 , C07H21/04 , C12N9/00
CPC分类号： C12C5/004 , C12C11/00 , C12C11/003 , C12C11/02 , C12C12/004 , C12C12/006 , C12C5/026 , C12G1/0203 , C12N9/1029
摘要： This invention disclosed herein provides an alcohol acetyl transferase ("AATase"), an AATase encoding gene and a yeast having an improved ester producing ability due to transformation with the AATase encoding gene. This invention also provides a process for producing an alcoholic beverage having an enriched ester flavor using the transformed yeast.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式