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1. 发明授权

US07122865B2 SOI wafer and process for producing it 有权
标题翻译： SOI晶片及其制造方法
公开(公告)号：US07122865B2
公开(公告)日：2006-10-17
申请号：US10853322
申请日：2004-05-25
申请人： Robert Hölzl , Dirk Dantz , Andreas Huber , Ulrich Lambert , Reinhold Wahlich
发明人： Robert Hölzl , Dirk Dantz , Andreas Huber , Ulrich Lambert , Reinhold Wahlich
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/2007 , H01L21/76254
摘要： An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 μm, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2.A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 1012/cm3 and of vacancy agglomerates of at most 105/cm3. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.
摘要翻译： SOI晶片包括由硅制成的衬底，具有至少1.6W /（Km）的热导率和厚度为10nm至10μm的单晶硅层的电绝缘层，标准偏差从平均层厚度至多5％，密度至多为0.5HF缺陷/ cm 2。一种制造这种SOI晶片的方法，其中由硅制成的衬底晶片通过预先施加的电绝缘材料层与施主晶片接合。供体晶片承载单晶硅的施主层，其空位浓度至多为10 12 / cm 3，空位团聚体最多为10 ^{5/3/3。在晶片已经接合之后，施主晶片的厚度被减小，使得具有这些性质的单晶硅层由施主层形成，该单晶硅层通过该晶体管接合到衬底晶片电绝缘材料层。}

2. 发明授权

US06803331B2 Process for the heat treatment of a silicon wafer, and silicon wafer produced 有权
标题翻译：制造硅晶片和硅晶片的热处理工艺
公开(公告)号：US06803331B2
公开(公告)日：2004-10-12
申请号：US10357601
申请日：2003-02-04
申请人： Robert Hölzl , Christoph Seuring , Reinhold Wahlich , Wilfried Von Ammon
发明人： Robert Hölzl , Christoph Seuring , Reinhold Wahlich , Wilfried Von Ammon
IPC分类号： H01L2126
CPC分类号： C30B29/06 , C30B33/00 , H01L21/3225 , H01L21/324 , Y10T117/1088
摘要： A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality [ Oi ]
摘要翻译：一种用于对硅晶片进行热处理的方法，其中硅晶片至少临时暴露于含氧气氛中，热处理发生在以不等式满足的方式选择的温度下，其中[ Oi]是硅晶片中的氧浓度。（T）是在温度T下氧在硅中的极限溶解度，sigmaSiO 2是二氧化硅的表面能，Ω是沉淀氧原子的体积， r是平均COP半径，k是玻尔兹曼常数。由上述方法制成的硅晶片。

3. 发明授权

US07235863B2 Silicon wafer and process for producing it 有权
公开(公告)号：US07235863B2
公开(公告)日：2007-06-26
申请号：US10893522
申请日：2004-07-16
申请人： Christoph Seuring , Robert Hölzl , Reinhold Wahlich , Wilfried Von Ammon
发明人： Christoph Seuring , Robert Hölzl , Reinhold Wahlich , Wilfried Von Ammon
IPC分类号： H01L29/167 , C30B15/00
CPC分类号： H01L21/3225 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ O ⁢ ⁢ i ]

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