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1. 发明授权

US07162799B2 Method for manufacturing an item 失效
标题翻译：制造物品的方法
公开(公告)号：US07162799B2
公开(公告)日：2007-01-16
申请号：US11066071
申请日：2005-02-25
申请人： Diane E. Moore , John J. Lubash
发明人： Diane E. Moore , John J. Lubash
IPC分类号： B23B11/00
CPC分类号： G05B19/41805 , B23P19/001 , B23P21/004 , B23P2700/50 , B62D65/18 , G05B2219/31046 , G05B2219/31432 , G05B2219/31466 , G05B2219/32005 , Y02P90/04 , Y10T29/49622 , Y10T29/49764 , Y10T29/49769 , Y10T29/49778 , Y10T29/4978 , Y10T29/49828 , Y10T29/49829 , Y10T29/53052 , Y10T29/53087 , Y10T29/53365 , Y10T29/534 , Y10T29/53548
摘要： A method for notifying installers 14–22 of the existence, type, and location of a portion 26 of an item within an assembly line 10. The notification allows the installers 14–22 to respectively ensure that the components 40 which are needed to be placed upon the portion 26 are available for use by the installer 14–22 in a timely manner.
摘要翻译：一种用于通知安装器14-22在装配线10内的物品的部分26的存在，类型和位置的方法。该通知允许安装者14-22分别确保需要放置在部分26上的组件40可及时地由安装者14-22使用。

2. 发明授权

US4489742A Thermoelectric device and method of making and using same 失效
标题翻译：热电装置及其制造和使用方法
公开(公告)号：US4489742A
公开(公告)日：1984-12-25
申请号：US516154
申请日：1983-07-21
申请人： Diane E. Moore , Jaime M. Reyes , Eugen Munteanu
发明人： Diane E. Moore , Jaime M. Reyes , Eugen Munteanu
IPC分类号： H01L35/08 , H01L35/34 , H01L35/28
CPC分类号： H01L35/08 , H01L35/34
摘要： An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.
摘要翻译：公开了一种提供改进的热电装置及其制造和使用方法的发明。该装置通过使用包含至少75％母线的粘合材料以及插入在边界结构和对应的热电半导体元件之间的粘附金属层，显示出提高的效率和使用寿命。

3. 发明授权

US4491679A Thermoelectric materials and devices made therewith 失效
标题翻译：热电材料和由此制成的装置
公开(公告)号：US4491679A
公开(公告)日：1985-01-01
申请号：US516153
申请日：1983-07-21
申请人： Diane E. Moore
发明人： Diane E. Moore
IPC分类号： H01L35/16 , H01L35/28
CPC分类号： H01L35/16
摘要： The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide.Improved conversion devices include powder pressed elements from one or both of these materials.
摘要翻译：所公开的发明包括用于热电转换的改进的装置和材料，特别是用于在300℃及以下的温度下操作。无序的p型半导体元件掺入银和铅的化合物佐剂，以实现增强的“品质因数”值和相应提高的热电转换效率。通过使用降低的硒含量，优选与溴化亚铜组合，用无序的n型元素获得相似的结果。改进的转换装置包括来自这些材料中的一种或两种的粉末压制元件。

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