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1. 发明授权

US09157416B2 Direct-drive electric machine configured with a plural-module combination structure 有权
标题翻译：配置有多模组合结构的直驱电机
公开(公告)号：US09157416B2
公开(公告)日：2015-10-13
申请号：US13496807
申请日：2010-09-15
申请人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
发明人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
IPC分类号： H02K21/12 , H02K1/27 , F03D9/00 , H02K7/18 , H02K21/24 , H02K41/03
CPC分类号： F03D9/25 , F03D15/20 , F03D80/70 , F05B2220/7066 , H02K7/1838 , H02K7/1869 , H02K21/12 , H02K21/24 , H02K41/031 , H02K2201/12 , H02K2201/15 , H02K2213/12 , Y02E10/725 , Y02P70/523
摘要： The present invention provides a direct-drive electric machine such as a generator and a motor comprising a rotor or a mover and a stator. The direct-drive electric machine is configured with a plural-module combination structure in which the rotor or the mover and the stator are mutually combined such that a plurality of modules form one phase, respectively.
摘要翻译：本发明提供了一种直接驱动电机，例如发电机和包括转子，动子和定子的电动机。直驱电机具有多模组合结构，其中转子或动子和定子相互组合，使得多个模块分别形成一相。

2. 发明申请

US20120228965A1 DIRECT-DRIVE ELECTRIC MACHINE 有权
标题翻译：直驱电机
公开(公告)号：US20120228965A1
公开(公告)日：2012-09-13
申请号：US13496807
申请日：2010-09-15
申请人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
发明人： Deok Je Bang , Bong Jun Kim , Jan Abraham Ferreira , Henk Polinder
IPC分类号： H02K21/24 , H02K41/03
CPC分类号： F03D9/25 , F03D15/20 , F03D80/70 , F05B2220/7066 , H02K7/1838 , H02K7/1869 , H02K21/12 , H02K21/24 , H02K41/031 , H02K2201/12 , H02K2201/15 , H02K2213/12 , Y02E10/725 , Y02P70/523
摘要： The present invention provides a direct-drive electric machine such as a generator and a motor comprising a rotor or a mover and a stator. The direct-drive electric machine is configured with a plural-module combination structure in which the rotor or the mover and the stator are mutually combined such that a plurality of modules form one phase, respectively.
摘要翻译：本发明提供了一种直接驱动电机，例如发电机和包括转子，动子和定子的电动机。直驱电机具有多模组合结构，其中转子或动子和定子相互组合，使得多个模块分别形成一相。

3. 发明授权

US07929308B2 Power device package having enhanced heat dissipation 有权
标题翻译：功率器件封装具有增强的散热
公开(公告)号：US07929308B2
公开(公告)日：2011-04-19
申请号：US12535969
申请日：2009-08-05
申请人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
发明人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
IPC分类号： H05K7/20 , H01L21/335
CPC分类号： H05K1/0201 , H01L2224/48091 , H05K1/181 , H05K2201/10053 , H05K2201/10166 , H05K2201/10522 , H01L2924/00014
摘要： A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.
摘要翻译：功率器件封装使用半永久性金属 - 绝缘体转换（MIT）装置代替保险丝来控制功率器件的发热，并通过仅在一个区域上提供的小型散热器发射由功率器件产生的热量功率器件，从而确保良好的散热。因此，功率器件封装可以有效地应用于使用功率器件的任何电/电子电路。

4. 发明申请

US20100209623A1 APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS 审中-公开
标题翻译：用于生长大面积二氧化硅薄膜的装置和在装置中生长大面积氧化物薄膜的方法
公开(公告)号：US20100209623A1
公开(公告)日：2010-08-19
申请号：US12687185
申请日：2010-01-14
申请人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
发明人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
IPC分类号： C23C16/46 , C23C16/00 , C23C16/06
CPC分类号： C23C14/50 , C23C14/083 , C23C14/564
摘要： Provided is a technology for in-situ growing a large area VO2 thin film which is an MIT material without using a conductive adhesive for high temperatures such as a silver paste. Generally, when a VO2 thin film, which is an MIT material, is grown using a PLD or sputtering method under a high temperature, a conductive adhesive is used to improve thermal conduction. However, the thin film may be contaminated by the conductive adhesive and the conductive adhesive should be removed after growing the thin film. Therefore, adherence between the substrate and the surface of a heater when growing the thin film needs to be improved, and thus, a large area VO2 thin film growing apparatus which may grow the large area VO2 thin film easily and a method of growing the large area VO2 thin film are provided.
摘要翻译：本发明提供一种用于原位生长大面积VO2薄膜的技术，该薄膜是MIT材料，而不使用高温下的导电粘合剂如银浆。通常，当使用PLD或溅射法在高温下生长作为MIT材料的VO2薄膜时，使用导电粘合剂来改善导热性。然而，薄膜可能被导电粘合剂污染，并且在生长薄膜之后应该去除导电粘合剂。因此，需要提高生长薄膜时的基板与加热器表面的粘附性，能够容易地生长大面积VO2薄膜的大面积VO2薄膜生长装置，提供面积VO2薄膜。

5. 发明授权

US07557003B2 MIM capacitor manufacturing method 有权
标题翻译： MIM电容器制造方法
公开(公告)号：US07557003B2
公开(公告)日：2009-07-07
申请号：US11640154
申请日：2006-12-15
申请人： Bong Jun Kim
发明人： Bong Jun Kim
IPC分类号： H01L21/8242
CPC分类号： H01L21/76852
摘要： Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.
摘要翻译：金属 - 绝缘体 - 金属电容器及其制造方法公开了一种MIM（金属 - 绝缘体 - 金属）电容器。 MIM电容器包括：在基板上的下金属层和下金属互连; 下金属层上的阻挡金属层; 阻挡金属层上的绝缘层; 绝缘层上的上金属层; 在下金属互连上具有通孔的层间绝缘层; 并插入通孔。

6. 发明授权

US07691706B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07691706B2
公开(公告)日：2010-04-06
申请号：US11616820
申请日：2006-12-27
申请人： Bong Jun Kim
发明人： Bong Jun Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823481 , H01L21/76224 , H01L29/78
摘要： Embodiments relate to a method for fabricating a semiconductor device. In embodiments, the method may include forming a gate dielectric layer on an active region of a semiconductor substrate defined by an isolation region to form a gate conductive layer pattern, etching the isolation region of the semiconductor substrate where the gate conductive layer pattern is formed, to form an isolation trench, forming a polyoxide layer on the gate conductive layer pattern and a sidewall oxide layer in the trench by carrying out an oxidation process, forming a spacer nitride layer on the polyoxide layer and a liner nitride layer on the sidewall oxide layer by carrying out a nitride layer forming process, and then forming a dielectric layer on an entire surface of the resultant structure to fill the trench.
摘要翻译：实施例涉及一种用于制造半导体器件的方法。在实施例中，该方法可以包括在由隔离区域限定的半导体衬底的有源区上形成栅极电介质层以形成栅极导电层图案，蚀刻形成栅极导电层图案的半导体衬底的隔离区域，以形成隔离沟槽，通过进行氧化工艺在栅极导电层图案和沟槽中的侧壁氧化物层形成多环氧化物层，在多孔层上形成间隔氮化物层，在侧壁氧化物层上形成衬里氮化物层通过进行氮化物层形成工艺，然后在所得结构的整个表面上形成电介质层以填充沟槽。

7. 发明申请

US20080297358A1 Temperature Sensor Using Abrupt Metal-Insulator Transition (Mit) and Alarm Comprising the Temperature Sensor 有权
标题翻译：温度传感器使用突发金属绝缘体转换（Mit）和包含温度传感器的报警器
公开(公告)号：US20080297358A1
公开(公告)日：2008-12-04
申请号：US12090084
申请日：2006-06-27
申请人： Hyun-Tak Kim , Kwang Yong Kang , Yong Wook Lee , Byung Gyu Chae , Bong Jun Kim , Sang Kuk Choi , Sun Jin Yun
发明人： Hyun-Tak Kim , Kwang Yong Kang , Yong Wook Lee , Byung Gyu Chae , Bong Jun Kim , Sang Kuk Choi , Sun Jin Yun
IPC分类号： G08B17/06 , G01K7/16
CPC分类号： G01K3/005 , G01K7/22
摘要： Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
摘要翻译：提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

8. 发明申请

US20070145526A1 MIM capacitor and method for manufacturing the same 有权
标题翻译： MIM电容器及其制造方法
公开(公告)号：US20070145526A1
公开(公告)日：2007-06-28
申请号：US11640154
申请日：2006-12-15
申请人： Bong Jun Kim
发明人： Bong Jun Kim
IPC分类号： H01L29/00
CPC分类号： H01L21/76852
摘要： Disclosed are an MIM (Metal-Insulator-Metal) capacitor and a method of manufacturing the same. The MIM capacitor includes: a lower metal layer and a lower metal interconnection on a substrate; a barrier metal layer on the lower metal layer; an insulating layer on the barrier metal layer; an upper metal layer on the insulating layer; an interlayer dielectric layer having a via hole on the lower metal interconnection; and a plug in the via hole.
摘要翻译：金属绝缘子金属电容器及其制造方法公开了一种MIM（金属 - 绝缘体 - 金属）电容器及其制造方法。 MIM电容器包括：在基板上的下金属层和下金属互连; 下金属层上的阻挡金属层; 阻挡金属层上的绝缘层; 绝缘层上的上金属层; 在下金属互连上具有通孔的层间绝缘层; 并插入通孔。

9. 发明授权

US08502478B2 Variable gate field-effect transistor and electrical and electronic apparatus including the same 有权
公开(公告)号：US08502478B2
公开(公告)日：2013-08-06
申请号：US13089244
申请日：2011-04-18
申请人： Hyun Tak Kim , Bong Jun Kim
发明人： Hyun Tak Kim , Bong Jun Kim
IPC分类号： H05B37/02 , H01L21/8222 , H01L35/00
CPC分类号： H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
摘要： Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

10. 发明申请

US20090091003A1 INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR 审中-公开
标题翻译：绝缘子承受金属绝缘体过渡的破坏，制造绝缘体的方法和使用绝缘体的装置
公开(公告)号：US20090091003A1
公开(公告)日：2009-04-09
申请号：US12089778
申请日：2006-10-16
申请人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
发明人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
IPC分类号： H01L29/51 , B05D5/12 , C23C14/34 , H05H1/24
CPC分类号： H01B3/12 , C23C16/40 , C23C16/403 , C23C16/405 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/3141 , H01L21/31604 , H01L21/3162 , H01L49/003
摘要： Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.
摘要翻译：提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。

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