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1. 发明申请

US20100209623A1 APPARATUS FOR GROWING LARGE AREA VANADIUM DIOXIDE THIN FILM AND METHOD OF GROWING LARGE AREA OXIDE THIN FILM IN THE APPARATUS 审中-公开
标题翻译：用于生长大面积二氧化硅薄膜的装置和在装置中生长大面积氧化物薄膜的方法
公开(公告)号：US20100209623A1
公开(公告)日：2010-08-19
申请号：US12687185
申请日：2010-01-14
申请人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
发明人： Bong Jun Kim , Giwan Seo , Hyun Tak Kim
IPC分类号： C23C16/46 , C23C16/00 , C23C16/06
CPC分类号： C23C14/50 , C23C14/083 , C23C14/564
摘要： Provided is a technology for in-situ growing a large area VO2 thin film which is an MIT material without using a conductive adhesive for high temperatures such as a silver paste. Generally, when a VO2 thin film, which is an MIT material, is grown using a PLD or sputtering method under a high temperature, a conductive adhesive is used to improve thermal conduction. However, the thin film may be contaminated by the conductive adhesive and the conductive adhesive should be removed after growing the thin film. Therefore, adherence between the substrate and the surface of a heater when growing the thin film needs to be improved, and thus, a large area VO2 thin film growing apparatus which may grow the large area VO2 thin film easily and a method of growing the large area VO2 thin film are provided.
摘要翻译：本发明提供一种用于原位生长大面积VO2薄膜的技术，该薄膜是MIT材料，而不使用高温下的导电粘合剂如银浆。通常，当使用PLD或溅射法在高温下生长作为MIT材料的VO2薄膜时，使用导电粘合剂来改善导热性。然而，薄膜可能被导电粘合剂污染，并且在生长薄膜之后应该去除导电粘合剂。因此，需要提高生长薄膜时的基板与加热器表面的粘附性，能够容易地生长大面积VO2薄膜的大面积VO2薄膜生长装置，提供面积VO2薄膜。

2. 发明申请

US20100122976A1 THERMISTOR WITH 3 TERMINALS, THERMISTOR-TRANSISTOR, CIRCUIT FOR CONTROLLING HEAT OF POWER TRANSISTOR USING THE THERMISTOR-TRANSISTOR, AND POWER SYSTEM INCLUDING THE CIRCUIT 有权
标题翻译：具有3个端子的热敏电阻器，热敏电阻器，用于使用热敏电阻器控制功率晶体管的电路的电路，以及包括电路的电力系统
公开(公告)号：US20100122976A1
公开(公告)日：2010-05-20
申请号：US12608054
申请日：2009-10-29
申请人： Bongjun KIM , Giwan Seo , Hyun Tak Kim
发明人： Bongjun KIM , Giwan Seo , Hyun Tak Kim
IPC分类号： H05B1/00 , H01L29/66
CPC分类号： H01C7/008 , H01C7/18 , H01L27/0248 , H03K17/08 , H03K2017/0806
摘要： Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.
摘要翻译：本发明提供一种具有3个端子的热敏电阻，包括该热敏电阻的热敏电阻晶体管，一个用于控制使用该热敏电阻晶体管的功率晶体管的热量的电路以及包括该电路的电力系统。该电路包括：热敏电阻晶体管，其包括具有随着温度升高而降低的电阻的热敏电阻和连接到热敏电阻的控制晶体管; 以及连接到驱动装置以控制向驱动装置供电的至少一个功率晶体管，其中所述热敏电阻 - 晶体管粘附到所述至少一个功率晶体管的表面和发热部分中的一个，以及连接到所述至少一个功率晶体管的基极，栅极，集电极和漏极中的一个，以在所述至少一个功率晶体管的温度升高时降低或阻断在所述至少一个功率晶体管中流动的电流，以防止功率晶体管升温。

3. 发明授权

US08420987B2 Thermistor with 3 terminals, thermistor-transistor, circuit for controlling heat of power transistor using the thermistor-transistor, and power system including the circuit 有权
标题翻译：具有3个端子的热敏电阻，热敏电阻晶体管，使用该热敏电阻晶体管来控制功率晶体管的热的电路，以及包含该电路的电力系统
公开(公告)号：US08420987B2
公开(公告)日：2013-04-16
申请号：US12608054
申请日：2009-10-29
申请人： Bongjun Kim , Giwan Seo , Hyun Tak Kim
发明人： Bongjun Kim , Giwan Seo , Hyun Tak Kim
IPC分类号： H05B1/00 , H01L29/66
CPC分类号： H01C7/008 , H01C7/18 , H01L27/0248 , H03K17/08 , H03K2017/0806
摘要： Provided are a thermistor with 3 terminals, a thermistor-transistor including the thermistor, a circuit for controlling heat of a power transistor using the thermistor-transistor, and a power system including the circuit. The circuit includes: a thermistor-transistor which comprises a thermistor having a resistance decreasing with an increase in temperature and a control transistor connected to the thermistor; and at least one power transistor which is connected to a driving device to control a supply of power to the driving device, wherein the thermistor-transistor is adhered to one of a surface and a heat-emitting part of the at least one power transistor and is connected to one of a base, a gate, a collector, and a drain of the at least one power transistor to decrease or block a current flowing in the at least one power transistor when the temperature of the at least one power transistor rises, so as to prevent the power transistor from heating up.
摘要翻译：本发明提供一种具有3个端子的热敏电阻，包括该热敏电阻的热敏电阻晶体管，一个用于控制使用该热敏电阻晶体管的功率晶体管的热量的电路以及包括该电路的电力系统。该电路包括：热敏电阻晶体管，其包括具有随着温度升高而降低的电阻的热敏电阻和连接到热敏电阻的控制晶体管; 以及连接到驱动装置以控制向驱动装置供电的至少一个功率晶体管，其中所述热敏电阻 - 晶体管粘附到所述至少一个功率晶体管的表面和发热部分中的一个，以及连接到所述至少一个功率晶体管的基极，栅极，集电极和漏极中的一个，以在所述至少一个功率晶体管的温度升高时降低或阻断在所述至少一个功率晶体管中流动的电流，以防止功率晶体管升温。

4. 发明授权

US07929308B2 Power device package having enhanced heat dissipation 有权
标题翻译：功率器件封装具有增强的散热
公开(公告)号：US07929308B2
公开(公告)日：2011-04-19
申请号：US12535969
申请日：2009-08-05
申请人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
发明人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
IPC分类号： H05K7/20 , H01L21/335
CPC分类号： H05K1/0201 , H01L2224/48091 , H05K1/181 , H05K2201/10053 , H05K2201/10166 , H05K2201/10522 , H01L2924/00014
摘要： A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.
摘要翻译：功率器件封装使用半永久性金属 - 绝缘体转换（MIT）装置代替保险丝来控制功率器件的发热，并通过仅在一个区域上提供的小型散热器发射由功率器件产生的热量功率器件，从而确保良好的散热。因此，功率器件封装可以有效地应用于使用功率器件的任何电/电子电路。

5. 发明申请

US20110018607A1 METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE 有权
标题翻译：使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路
公开(公告)号：US20110018607A1
公开(公告)日：2011-01-27
申请号：US12742430
申请日：2008-11-11
申请人： Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
发明人： Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
IPC分类号： H03K17/60
CPC分类号： H01L25/16 , H01L23/62 , H01L2924/0002 , H02H3/085 , H02H5/047 , H01L2924/00
摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
摘要翻译：提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以半永久使用。用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热晶体管。

6. 发明授权

US07489492B2 Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit 有权
标题翻译：突然的金属 - 绝缘体转换装置，用于使用突然的金属 - 绝缘体转换装置去除高压噪声的电路，以及包括该电路的电和/或电子系统
公开(公告)号：US07489492B2
公开(公告)日：2009-02-10
申请号：US12021764
申请日：2008-01-29
申请人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
发明人： Hyun Tak Kim , Kwang Yong Kang , Bong Jun Kim , Yong Wook Lee , Sun Jin Yun , Byung Gyu Chae , Gyung Ock Kim
IPC分类号： H02H3/22 , H02H9/04
CPC分类号： H01L49/003
摘要： Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.
摘要翻译：提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变（MIT）装置，从超高电压，高压噪声使用突发MIT装置绕过超高压噪声的除电路，以及包括高压噪声去除电路的电气和/或电子系统。突变MIT装置包括基板，第一突发MIT结构和第二突发MIT结构。第一和第二突变MIT结构分别形成在基板的上表面和下表面上。高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

7. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

8. 发明授权

US08502478B2 Variable gate field-effect transistor and electrical and electronic apparatus including the same 有权
公开(公告)号：US08502478B2
公开(公告)日：2013-08-06
申请号：US13089244
申请日：2011-04-18
申请人： Hyun Tak Kim , Bong Jun Kim
发明人： Hyun Tak Kim , Bong Jun Kim
IPC分类号： H05B37/02 , H01L21/8222 , H01L35/00
CPC分类号： H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
摘要： Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

9. 发明申请

US20090091003A1 INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR 审中-公开
标题翻译：绝缘子承受金属绝缘体过渡的破坏，制造绝缘体的方法和使用绝缘体的装置
公开(公告)号：US20090091003A1
公开(公告)日：2009-04-09
申请号：US12089778
申请日：2006-10-16
申请人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
发明人： Jung Wook Lim , Sun Jin Yun , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang-Yong Kang
IPC分类号： H01L29/51 , B05D5/12 , C23C14/34 , H05H1/24
CPC分类号： H01B3/12 , C23C16/40 , C23C16/403 , C23C16/405 , H01L21/02178 , H01L21/02186 , H01L21/02194 , H01L21/02271 , H01L21/02274 , H01L21/02304 , H01L21/3141 , H01L21/31604 , H01L21/3162 , H01L49/003
摘要： Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change.
摘要翻译：提供具有2eV以上的能带隙并且经历突发MIT而不经历结构变化的绝缘体，制造绝缘体的方法以及使用该绝缘体的器件。通过电子之间的能量变化，绝缘体从绝缘体相突然转变为金属相，而不发生结构变化。

10. 发明授权

US08247806B2 Field effect transistor having graphene channel layer 有权
标题翻译：具有石墨烯通道层的场效应晶体管
公开(公告)号：US08247806B2
公开(公告)日：2012-08-21
申请号：US12649321
申请日：2009-12-29
申请人： Byung-Gyu Chae , Hyun Tak Kim
发明人： Byung-Gyu Chae , Hyun Tak Kim
IPC分类号： H01L51/30
CPC分类号： H01L29/1606 , H01L29/0673 , H01L29/0895 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L51/0541
摘要： Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.
摘要翻译：提供了包括石墨烯通道层的场效应晶体管，并且能够通过使用石墨烯沟道层的石墨烯来提高工作电流的导通/截止比。场效应晶体管包括：衬底; 所述石墨烯通道层设置在所述基板的一部分上并且包括石墨烯; 设置在所述石墨烯通道层的第一区域上的第一电极和所述基板的一部分; 设置在离开第一区域的石墨烯通道层的第二区域上的中间层和基板的一部分; 设置在所述中间层上的第二电极; 设置在石墨烯通道层，第一电极和第二电极的一部分上的栅极绝缘层; 以及设置在栅极绝缘层的一部分上的栅电极。

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