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1. 发明授权

US06905622B2 Electroless deposition method 有权
公开(公告)号：US06905622B2
公开(公告)日：2005-06-14
申请号：US10117712
申请日：2002-04-03
申请人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
发明人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
IPC分类号： C23C18/16 , H01L21/02 , H01L21/285 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/768 , B44C1/22 , B05D3/04 , B05D3/10
CPC分类号： H01L21/02074 , C23C18/1694 , C23C18/1831 , C23C18/1834 , C23C18/1851 , C23C18/1879 , C23C18/1882 , C23C18/1893 , C23C18/31 , C23C18/34 , C23C18/36 , C23C18/50 , H01L21/02068 , H01L21/28518 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L2221/1089
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

2. 发明授权

US06899816B2 Electroless deposition method 有权
标题翻译：无电沉积法
公开(公告)号：US06899816B2
公开(公告)日：2005-05-31
申请号：US10117711
申请日：2002-04-03
申请人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
发明人： Deenesh Padhi , Joseph Yahalom , Sivakami Ramanathan , Chris R. McGuirk , Srinivas Gandikota , Girish Dixit
IPC分类号： C23C18/18 , H01L21/285 , H01L21/288 , H01L21/336 , H01L21/768 , B44C1/22 , B05D3/04 , B05D3/10
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1893 , H01L21/28518 , H01L21/288 , H01L21/76849 , H01L21/76874 , H01L29/665 , H01L2221/1089
摘要： Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.
摘要翻译：提供了通过无电沉积技术形成金属或金属硅化物层的方法和装置。在一个方面，提供了一种用于处理衬底的方法，包括在衬底表面上沉积起始层，清洁衬底表面，以及通过将引发层暴露于无电镀溶液而在引发层上沉积导电材料。该方法可以进一步包括用酸性溶液蚀刻衬底表面并在沉积起始层之前清洁酸性溶液的衬底。起始层可以通过将基材表面暴露于贵金属化学电解溶液或含硼烷溶液来形成。导电材料可以用含硼烷的还原剂沉积。导电材料可以用作钝化层，阻挡层，种子层，或用于形成金属硅化物层。

3. 发明授权

US06878245B2 Method and apparatus for reducing organic depletion during non-processing time periods 失效
标题翻译：在非处理时间段内减少有机物耗尽的方法和装置
公开(公告)号：US06878245B2
公开(公告)日：2005-04-12
申请号：US10085338
申请日：2002-02-27
申请人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D21/14 , C25D21/18 , C25D17/00 , C25D21/00
CPC分类号： C25D21/18 , C25D21/14
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

4. 发明授权

US06824666B2 Electroless deposition method over sub-micron apertures 有权
标题翻译：亚微米孔径上的无电沉积方法
公开(公告)号：US06824666B2
公开(公告)日：2004-11-30
申请号：US10059822
申请日：2002-01-28
申请人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： C23C2800
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1831 , C23C18/28 , C23C18/30 , C23C18/38 , H01L21/288 , H01L21/2885 , H01L21/6708 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , Y10S428/936
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

5. 发明申请

US20050136185A1 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application 审中-公开
标题翻译：后冲洗以改善无电钴在铜上的选择性沉积，用于ULSI应用
公开(公告)号：US20050136185A1
公开(公告)日：2005-06-23
申请号：US10979078
申请日：2004-10-29
申请人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish Dixit
发明人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish Dixit
IPC分类号： B05D1/40 , B05D3/00 , C23C18/16 , C23C18/31 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/302 , H01L21/31 , H01L21/44 , H01L21/461 , H01L21/768
CPC分类号： H01L21/76877 , C23C18/166 , C23C18/1831 , C23C18/1834 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/36 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/76814 , H01L21/76849 , H01L21/76865 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 Å and about 200 Å of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.
摘要翻译：提供了使用一种或多种电镀技术在衬底表面上沉积钝化层的方法。该方法的实施例包括通过将衬底表面暴露于第一无电解溶液来选择性地沉积引发层，通过将引发层暴露于第二无电解溶液来沉积起始层上的钝化材料，并用酸性溶液。在另一方面，该方法包括在施加酸性溶液期间将超声波或兆声波能量施加到基底表面。在另一方面，该方法包括使用酸性溶液去除大约至大约200埃的钝化材料。在另一方面，该方法包括在沉积起始层之前用第一酸性溶液清洗基底表面。

6. 发明授权

US06821909B2 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application 失效
标题翻译：后冲洗以改善无电钴在铜上的选择性沉积，用于ULSI应用
公开(公告)号：US06821909B2
公开(公告)日：2004-11-23
申请号：US10284855
申请日：2002-10-30
申请人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
发明人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： H01L2131
CPC分类号： H01L21/76877 , C23C18/166 , C23C18/1831 , C23C18/1834 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/36 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/76814 , H01L21/76849 , H01L21/76865 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 Å and about 200 Å of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.
摘要翻译：提供了使用一种或多种电镀技术在衬底表面上沉积钝化层的方法。该方法的实施例包括通过将衬底表面暴露于第一无电解溶液来选择性地沉积引发层，通过将引发层暴露于第二无电解溶液来沉积起始层上的钝化材料，并用酸性溶液。在另一方面，该方法包括在施加酸性溶液期间将超声波或兆声波能量施加到基底表面。在另一方面，该方法包括使用酸性溶液去除大约至大约200埃的钝化材料。在另一方面，该方法包括在沉积起始层之前用第一酸性溶液清洗基底表面。

7. 发明授权

US06797620B2 Method and apparatus for improved electroplating fill of an aperture 失效
标题翻译：用于改善孔的电镀填充物的方法和装置
公开(公告)号：US06797620B2
公开(公告)日：2004-09-28
申请号：US10124095
申请日：2002-04-16
申请人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
发明人： John S. Lewis , Srinivas Gandikota , Sivakami Ramanathan , Girish Dixit , Robin Cheung , Fusen Chen
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76879
摘要： A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.
摘要翻译：提供了一种方法和装置，用于通过沉积选择性地抑制或限制用于填充孔的后续层的形成或生长的材料来填充形成在衬底表面中的孔。在一个方面，提供了一种用于处理衬底的方法，包括提供具有形成在其中的场和孔的衬底，其中每个孔具有底部和侧壁，在孔的底部和侧壁上沉积种子层，沉积生长在衬底的场中的至少一个或孔的侧壁的上部中的至少一个上的抑制层，并且在生长抑制层和种子层上沉积导电层。生长抑制层的沉积改善了孔的填充，从孔的底部到基底的场。

8. 发明授权

US08545639B2 Method of cleaning aluminum plasma chamber parts 有权
标题翻译：铝等离子体室部件的清洗方法
公开(公告)号：US08545639B2
公开(公告)日：2013-10-01
申请号：US13285203
申请日：2011-10-31
申请人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
发明人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01J37/32853 , C11D7/08 , C11D11/0047 , H01J37/32862
摘要： A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.
摘要翻译：一种清洁等离子体室的部件的表面的方法，其中所述部件具有铝或阳极氧化的铝表面，所述方法包括以下步骤：将所述部件的表面浸入稀释的硫酸过氧化物（DSP）溶液中; 在从DSP溶液中除去表面后，用水冲洗表面; 将表面浸入稀硝酸（HNO3）溶液中; 在从稀硝酸溶液中除去表面后，用水冲洗表面; 并重复至少两次将表面浸入稀硝酸的步骤，然后喷淋冲洗该表面。

9. 发明申请

US20130104930A1 METHOD OF CLEANING ALUMINUM PLASMA CHAMBER PARTS 有权
标题翻译：清洁铝等离子体室部件的方法
公开(公告)号：US20130104930A1
公开(公告)日：2013-05-02
申请号：US13285203
申请日：2011-10-31
申请人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
发明人： Hong Shih , John Daugherty , Dean J. Larson , Tuochuan Huang , Armen Avoyan , Jeremy Chang , Sivakami Ramanathan , Robert Anderson , Yan Fang , Duane Outka , Paul Mulgrew
IPC分类号： C23G1/02
CPC分类号： H01J37/32853 , C11D7/08 , C11D11/0047 , H01J37/32862
摘要： A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.
摘要翻译：一种清洁等离子体室的部件的表面的方法，其中所述部件具有铝或阳极氧化的铝表面，所述方法包括以下步骤：将所述部件的表面浸入稀释的硫酸过氧化物（DSP）溶液中; 在从DSP溶液中除去表面后，用水冲洗表面; 将表面浸入稀硝酸（HNO3）溶液中; 在从稀硝酸溶液中除去表面后，用水冲洗表面; 并重复至少两次将表面浸入稀硝酸的步骤，然后喷淋冲洗该表面。

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