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1. 发明授权

US08288239B2 Thermal flux annealing influence of buried species 失效
标题翻译：埋藏物种的热通量退火影响
公开(公告)号：US08288239B2
公开(公告)日：2012-10-16
申请号：US10261379
申请日：2002-09-30
申请人： Dean C. Jennings , Amir Al-Bayati
发明人： Dean C. Jennings , Amir Al-Bayati
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , B23K26/0738 , H01L21/26533 , H01L21/324
摘要： A method including introducing a species into a substrate including semiconductor material; and translating linearly focused electromagnetic radiation across a surface of the substrate, the electromagnetic radiation being sufficient to thermally influence the species. An apparatus including an electromagnetic radiation source; a stage having dimensions suitable for accommodating a semiconductor substrate within a chamber; an optical element disposed between the electromagnetic radiation source and the stage to focus radiation from the electromagnetic radiation source into a line having a length determined by the diameter of a substrate to be placed on the stage; and a controller coupled to the electromagnetic radiation source including machine readable program instructions that allow the controller to control the depth into which a substrate is exposed to the radiation.
摘要翻译：一种方法，包括将物质引入到包括半导体材料的基板中; 并且将线性聚焦的电磁辐射平移在衬底的表面上，电磁辐射足以热影响物质。一种包括电磁辐射源的设备; 具有适于容纳室内的半导体衬底的尺寸的平台; 设置在所述电磁辐射源和所述台之间的光学元件，用于将来自所述电磁辐射源的辐射聚焦成具有由要放置在所述台上的基板的直径确定的长度的线; 以及耦合到电磁辐射源的控制器，包括允许控制器控制衬底暴露于辐射的深度的机器可读程序指令。

2. 发明授权

US08796769B2 Thermal flux annealing influence of buried species 有权
标题翻译：埋藏物种的热通量退火影响
公开(公告)号：US08796769B2
公开(公告)日：2014-08-05
申请号：US13619898
申请日：2012-09-14
申请人： Dean C. Jennings , Amir Al-Bayati
发明人： Dean C. Jennings , Amir Al-Bayati
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , B23K26/0738 , H01L21/26533 , H01L21/324
摘要： A method including introducing a species into a substrate including semiconductor material; and translating linearly focused electromagnetic radiation across a surface of the substrate, the electromagnetic radiation being sufficient to thermally influence the species. An apparatus including an electromagnetic radiation source; a stage having dimensions suitable for accommodating a semiconductor substrate within a chamber; an optical element disposed between the electromagnetic radiation source and the stage to focus radiation from the electromagnetic radiation source into a line having a length determined by the diameter of a substrate to be placed on the stage; and a controller coupled to the electromagnetic radiation source including machine readable program instructions that allow the controller to control the depth into which a substrate is exposed to the radiation.
摘要翻译：一种方法，包括将物质引入到包括半导体材料的基板中; 并且将线性聚焦的电磁辐射平移在衬底的表面上，电磁辐射足以热影响物质。一种包括电磁辐射源的设备; 具有适于容纳室内的半导体衬底的尺寸的平台; 设置在所述电磁辐射源和所述台之间的光学元件，用于将来自所述电磁辐射源的辐射聚焦成具有由放置在所述台上的基板的直径确定的长度的线; 以及耦合到电磁辐射源的控制器，包括允许控制器控制衬底暴露于辐射的深度的机器可读程序指令。

3. 发明申请

US20130008878A1 THERMAL FLUX ANNEALING INFLUENCE OF BURIED SPECIES 有权
标题翻译： ED ED。。。。。。。。。。。。。。。。。。
公开(公告)号：US20130008878A1
公开(公告)日：2013-01-10
申请号：US13619898
申请日：2012-09-14
申请人： Dean C. Jennings , Amir Al-Bayati
发明人： Dean C. Jennings , Amir Al-Bayati
IPC分类号： B23K26/00
CPC分类号： H01L21/268 , B23K26/0738 , H01L21/26533 , H01L21/324
摘要： A method including introducing a species into a substrate including semiconductor material; and translating linearly focused electromagnetic radiation across a surface of the substrate, the electromagnetic radiation being sufficient to thermally influence the species. An apparatus including an electromagnetic radiation source; a stage having dimensions suitable for accommodating a semiconductor substrate within a chamber; an optical element disposed between the electromagnetic radiation source and the stage to focus radiation from the electromagnetic radiation source into a line having a length determined by the diameter of a substrate to be placed on the stage; and a controller coupled to the electromagnetic radiation source including machine readable program instructions that allow the controller to control the depth into which a substrate is exposed to the radiation.
摘要翻译：一种方法，包括将物质引入到包括半导体材料的基板中; 并且将线性聚焦的电磁辐射平移在衬底的表面上，电磁辐射足以热影响物质。一种包括电磁辐射源的设备; 具有适于容纳半导体衬底在腔室内的尺寸的平台; 设置在所述电磁辐射源和所述台之间的光学元件，用于将来自所述电磁辐射源的辐射聚焦成具有由要放置在所述台上的基板的直径确定的长度的线; 以及耦合到电磁辐射源的控制器，包括允许控制器控制衬底暴露于辐射的深度的机器可读程序指令。

4. 发明授权

US06987240B2 Thermal flux processing by scanning 有权
公开(公告)号：US06987240B2
公开(公告)日：2006-01-17
申请号：US10325497
申请日：2002-12-18
申请人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
发明人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
IPC分类号： B23K26/08 , B23K26/10
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/034 , B23K26/04 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/0738 , B23K26/082 , B23K26/083 , B23K26/0838 , B23K26/0869 , B23K26/123 , B23K26/125 , B23K26/142 , B23K26/32 , B23K26/34 , B23K26/705 , B23K2101/34 , B23K2101/40 , B23K2103/08 , B23K2103/50 , C23C8/00 , C23C8/10 , C23C8/22 , C23C16/047 , C23C16/481 , G02B27/0955 , H01L21/00 , H01L21/2026 , H01L21/67115
摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation. The computer system is coupled to the detection module.

5. 发明授权

US06200388B1 Substrate support for a thermal processing chamber 失效
标题翻译：用于热处理室的基板支撑
公开(公告)号：US06200388B1
公开(公告)日：2001-03-13
申请号：US09022134
申请日：1998-02-11
申请人： Dean C. Jennings
发明人： Dean C. Jennings
IPC分类号： C23C1600
CPC分类号： H01L21/68757 , C23C16/4581 , Y10S156/914
摘要： A semiconductor wafer support for use in a thermal processing chamber includes a shelf for receiving a semiconductor wafer. The wafer support is formed of a silicon carbide substrate having a polysilicon layer disposed on the substrate, and a silicon nitride layer disposed on the polysilicon layer. A method of forming the multi-layered semiconductor wafer support is also disclosed.
摘要翻译：用于热处理室的半导体晶片支架包括用于接收半导体晶片的搁板。晶片支撑体由具有设置在基板上的多晶硅层的碳化硅基板和设置在多晶硅层上的氮化硅层构成。还公开了形成多层半导体晶片载体的方法。

6. 发明授权

US4672403A Lateral subsurface zener diode 失效
标题翻译：侧面地下齐纳二极管
公开(公告)号：US4672403A
公开(公告)日：1987-06-09
申请号：US778944
申请日：1985-09-23
申请人： Dean C. Jennings
发明人： Dean C. Jennings
IPC分类号： H01L29/866 , H01L29/90 , H01L29/06
CPC分类号： H01L29/866
摘要： A subsurface zener diode is formed in an N type semiconductor substrate such as the kind employed in the epitaxial layer found in silicon monolithic PN junction isolated integrated circuits. A P+ anode is ion implanted into and diffused from an oxide source and an N++ cathode is diffused within the confines of the anode. The cathode is surrounded with a counter-doped region that forces the PN junction breakdown subsurface. The resulting diode has a clean, sharp breakdown curve and the breakdown voltage can be tailored by controlling the anode deposition.
摘要翻译：在诸如在硅单片PN结隔离集成电路中发现的外延层中使用的N型半导体衬底中形成地下齐纳二极管。 P +阳极被离子注入并从氧化物源扩散，并且N + +阴极扩散在阳极的范围内。阴极被反向掺杂区域包围，其强制PN结击穿在下面。所得到的二极管具有清洁的，明显的击穿曲线，并且可以通过控制阳极沉积来调整击穿电压。

7. 发明授权

US08829393B2 Scanned laser light source 有权
标题翻译：扫描激光光源
公开(公告)号：US08829393B2
公开(公告)日：2014-09-09
申请号：US13442128
申请日：2012-04-09
申请人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
发明人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
IPC分类号： B23K26/08 , B23K26/00 , B23K26/03 , B23K26/06 , C23C16/04 , B23K26/073 , H01L21/00 , B23K26/42 , H01L21/67 , C23C8/00 , B23K26/34 , C23C16/48 , B23K26/14 , G02B27/09 , B23K26/04 , B23K26/12 , C23C8/22 , C23C8/10 , H01L21/20
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/034 , B23K26/04 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/0738 , B23K26/082 , B23K26/083 , B23K26/0838 , B23K26/0869 , B23K26/123 , B23K26/125 , B23K26/142 , B23K26/32 , B23K26/34 , B23K26/705 , B23K2101/34 , B23K2101/40 , B23K2103/08 , B23K2103/50 , C23C8/00 , C23C8/10 , C23C8/22 , C23C16/047 , C23C16/481 , G02B27/0955 , H01L21/00 , H01L21/2026 , H01L21/67115
摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
摘要翻译：热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。该台被配置为在其上接收基板。连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。检测模块位于路径内，被配置为检测连续波电磁辐射。

8. 发明申请

US20110277932A1 ELECTROSTATIC CHUCK CLEANING DURING SEMICONDUCTOR SUBSTRATE PROCESSING 有权
标题翻译：半导体基板处理中的静电切割清洗
公开(公告)号：US20110277932A1
公开(公告)日：2011-11-17
申请号：US13189811
申请日：2011-07-25
申请人： Dean C. Jennings , Majeed Foad , Jonathan Simmons
发明人： Dean C. Jennings , Majeed Foad , Jonathan Simmons
IPC分类号： B08B13/00 , C23F1/08
CPC分类号： H01L21/67028 , B08B7/00 , H01J2237/022 , H01J2237/2007 , H01J2237/31701 , H01L21/6831
摘要： Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.
摘要翻译：提供了在处理室中清洁静电卡盘的方法和装置。该方法包括将包含反应剂的背面气体流入处理室中的区域，该区域由静电卡盘或清洁站的表面与基底表面之间的空间限定。用反应剂蚀刻静电卡盘的表面以除去碎屑。还提供了一种用于清洁静电卡盘的设备，该设备包括：处理室; 具有通过处理室的壁布置的延伸臂; 固定在细长臂上的静电卡盘; 位于细长臂的范围内的清洁站; 以及可操作地连接到清洁站的反应气体源。

9. 发明授权

US07440088B2 Methods and devices for measuring a concentrated light beam 失效
标题翻译：用于测量集中光束的方法和装置
公开(公告)号：US07440088B2
公开(公告)日：2008-10-21
申请号：US11261439
申请日：2005-10-28
申请人： Timothy N. Thomas , Bruce Adams , Dean C. Jennings
发明人： Timothy N. Thomas , Bruce Adams , Dean C. Jennings
IPC分类号： G01J1/00
CPC分类号： G01J1/58 , G01J1/4257
摘要： Methods and devices are provided for profiling a beam of light that includes a wavelength λ. The beam of light is received. Secondary light is generated at a wavelength λ′ different from wavelength λ by fluorescing a material with the received beam of light. The secondary light is separated from the received beam of light. The separated secondary light is optically directed to a sensor.
摘要翻译：提供了用于对包括波长λ的光束进行成像的方法和装置。光束被接收。通过用接收的光束发射材料，在与波长λ不同的波长λ'处产生二次光。二次光从接收的光束分离。被分离的二次光被光学地指向传感器。

10. 发明授权

US4758537A Lateral subsurface zener diode making process 失效
标题翻译：横向地下齐纳二极管制造工艺
公开(公告)号：US4758537A
公开(公告)日：1988-07-19
申请号：US27913
申请日：1987-03-19
申请人： Dean C. Jennings
发明人： Dean C. Jennings
IPC分类号： H01L29/866 , H01L21/385
CPC分类号： H01L29/866 , Y10S438/983
摘要： A subsurface zener diode is formed in an N type semiconductor substrate such as the kind employed in the epitaxial layer found in silicon monolithic PN junction isolated integrated circuits. A P+ anode is ion implanted into and diffused from an oxide source and an N++ cathode is diffused within the confines of the anode. The cathode is surrounded with a counter-doped region that forces the PN junction breakdown subsurface. The resulting diode has a clean, sharp breakdown curve and the breakdown voltage can be tailored by controlling the anode deposition.
摘要翻译：在诸如在硅单片PN结隔离集成电路中发现的外延层中使用的N型半导体衬底中形成地下齐纳二极管。 P +阳极被离子注入并从氧化物源扩散，并且N + +阴极扩散在阳极的范围内。阴极被反向掺杂区域包围，其强制PN结击穿在下面。所得到的二极管具有清洁的，明显的击穿曲线，并且可以通过控制阳极沉积来调整击穿电压。

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