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1. 发明申请

US20110206864A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20110206864A1
公开(公告)日：2011-08-25
申请号：US13101328
申请日：2011-05-05
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： C07F17/00 , B22F9/20 , H05H1/24 , C23C16/18
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在基底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

2. 发明授权

US08153831B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US08153831B2
公开(公告)日：2012-04-10
申请号：US11900382
申请日：2007-09-11
申请人： David M. Thompson , David Walter Peters , Scott Houston Meiere
发明人： David M. Thompson , David Walter Peters , Scott Houston Meiere
IPC分类号： C07F11/00 , C07F9/00 , C23C16/00
CPC分类号： C07F17/00
摘要： This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（L1）yM（L2）zy表示的有机金属化合物，其中M是第5族金属或第6族金属，L1是取代或未取代的阴离子6电子给体配体，L2相同或不同，是（i）取代或未取代的阴离子2电子给体配体，（ii）取代或未取代的阳离子2电子给体配体，或（iii）取代或未取代的中性2电子供体配体; y是1的整数，z是M的化合价; 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法; 以及用于通过有机金属前体化合物的热或等离子体增强的解离在衬底上沉积金属和/或金属碳化物/氮化物层（例如钨，氮化钨，碳化钨或碳氮化钨）的方法，例如，通过CVD或ALD技术。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

3. 发明授权

US07959986B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US07959986B2
公开(公告)日：2011-06-14
申请号：US12364197
申请日：2009-02-02
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： H05H1/24
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在基底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

4. 发明申请

US20090136684A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 有权
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090136684A1
公开(公告)日：2009-05-28
申请号：US12364197
申请日：2009-02-02
申请人： DAVID WALTER PETERS , David M. Thompson
发明人： DAVID WALTER PETERS , David M. Thompson
IPC分类号： H05H1/24 , C07F17/00 , C23C16/18 , B05D3/02
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在基底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

5. 发明授权

US07547796B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US07547796B2
公开(公告)日：2009-06-16
申请号：US11501075
申请日：2006-08-09
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： C07F17/00 , C07F9/00 , B01J31/00
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在衬底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

6. 发明授权

US08408689B2 Methods of adjusting gloss of images on substrates using ink partial-curing and contact leveling and apparatuses useful in forming images on substrates 有权
标题翻译：使用油墨部分固化和接触调平以及可用于在基底上形成图像的装置来调整基板上图像的光泽度的方法
公开(公告)号：US08408689B2
公开(公告)日：2013-04-02
申请号：US12881802
申请日：2010-09-14
申请人： Bryan J. Roof , Jacques K. Webster-Curley , David M. Thompson
发明人： Bryan J. Roof , Jacques K. Webster-Curley , David M. Thompson
IPC分类号： G01D11/00 , B41J2/18 , B41J2/01
CPC分类号： B41F23/08 , B41J11/0015 , B41J11/002 , B41M3/008 , B41M7/0081
摘要： Apparatuses and methods for forming images on substrates in printing are provided. An exemplary embodiment of the apparatuses includes a first marking station for applying a first ink having a first color to a substrate; a first partial-curing station downstream from the first marking station including a first radiant energy source for irradiating the first ink on the substrate with first radiation to partially-cure the first ink; a second marking station downstream from the first partial-curing station for applying a second ink having a second color to the substrate; a second partial-curing station downstream from the second marking station including a second radiant energy source for irradiating the first ink and the second ink on the substrate with second radiation to further partially-cure the first ink and to partially-cure the second ink; a leveling device formed by a first member and a second member, the first member and second member being configured to apply pressure to the partially-cured first ink and second ink when the substrate is received at a nip to level the first ink and second ink on the surface of the substrate; and a post-leveling curing device for irradiating the as-leveled first ink and second ink on the surface of the substrate to substantially-fully cure the first ink and the second ink.
摘要翻译：提供了用于在印刷基板上形成图像的设备和方法。该装置的示例性实施例包括用于将具有第一颜色的第一墨施加到基底的第一标记工位; 第一标记站下游的第一部分固化站包括第一辐射能源，用于用第一辐射照射基板上的第一油墨以部分地固化第一油墨; 从第一部分固化站下游的第二标记站，用于将具有第二颜色的第二油墨施加到基板; 第二部分固化站包括第二辐射能源，第二辐射能源用于用第二辐射照射第一油墨和第二油墨以进一步部分地固化第一油墨并部分固化第二油墨; 由第一构件和第二构件形成的调平装置，所述第一构件和第二构件构造成当所述基板在辊隙处被接收以对所述部分固化的第一油墨和第二油墨施加压力以使所述第一油墨和所述第二油墨在基板的表面上; 以及后平整固化装置，用于在基板的表面上照射平整的第一油墨和第二油墨以基本上完全固化第一油墨和第二油墨。

7. 发明申请

US20100329716A1 APPARATUSES USEFUL FOR PRINTING AND CORRESPONDING METHODS 有权
标题翻译：用于打印和对应方法的设备
公开(公告)号：US20100329716A1
公开(公告)日：2010-12-30
申请号：US12492542
申请日：2009-06-26
申请人： Anthony S. CONDELLO , Augusto E. Barton , David M. Thompson
发明人： Anthony S. CONDELLO , Augusto E. Barton , David M. Thompson
IPC分类号： G03G15/20
CPC分类号： G03G15/205 , G03G15/2039 , G03G15/5062 , G03G2215/00772 , G03G2215/00805 , G03G2215/0081
摘要： Apparatuses useful for printing and methods of are provided. The apparatus includes a user interface for operating the printing apparatus, a fuser for fusing media, the fuser having a plurality of temperature settings, a gloss meter for measuring gloss of an image fused on the media, and a controller controlling the printing apparatus, wherein the controller: a) causes fusing of a plurality of media of a first type at a nominal fusing temperature, and then measuring a temperature of the pressure roll as a steady state pressure roll temperature, b) causes media of the first type to be input to the fuser to fuse an image onto the media, the fuser having a first fusing temperature, c) causes the gloss meter to measure a gloss level of the image fused on the media, and sending the measured gloss level with the first type of media to the controller, d) causes steps b) and c) to be repeated at various fusing temperatures different from the first fusing temperature, and saving the measured gloss levels with corresponding fuser temperatures, e) in response to a user indication of a desired gloss level received over the user interface, sets a temperature of the pressure roll to the steady state pressure roll temperature, and f) fuses media utilizing one of the measured fusing temperatures corresponding to the desired gloss level.
摘要翻译：提供了有用的打印设备和方法。该设备包括用于操作打印设备的用户界面，用于定影介质的定影器，具有多个温度设置的定影器，用于测量融合在介质上的图像的光泽度的光泽计和控制打印设备的控制器，其中控制器：a）使第一类型的多种介质在标称熔融温度下熔合，然后将压力辊的温度作为稳态压力辊温度进行测量; b）使得第一类型的介质被输入定影器将图像融合到介质上，定影器具有第一定影温度，c）使得光泽度计测量融合在介质上的图像的光泽度，并将测量的光泽度与第一类型的介质 d）使得在与第一定影温度不同的各种定影温度下重复步骤b）和c），并且将相应的定影温度的测量光泽度保持在e）在用户界面上接收到的期望光泽度的用户指示，将压力辊的温度设置为稳态压力辊温度，以及f）使用与期望的光泽度水平相对应的测量的定影温度之一熔化介质。

8. 发明授权

US07667065B2 High nucleation density organometallic compounds 有权
标题翻译：高成核密度的有机金属化合物
公开(公告)号：US07667065B2
公开(公告)日：2010-02-23
申请号：US11497351
申请日：2006-08-02
申请人： David M. Thompson
发明人： David M. Thompson
IPC分类号： C07F17/00 , C07F15/00
CPC分类号： C23C16/18 , C07F17/02 , C23C18/1204
摘要： This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.
摘要翻译：本发明涉及高成核密度的有机金属钌化合物。本发明还涉及一种生产高成核密度有机金属钌化合物的方法，包括在足以产生所述高成核密度的有机金属钌化合物的反应条件下使双（取代戊二烯基）钌化合物与取代的环戊二烯化合物反应。本发明还涉及一种通过分解高成核密度的有机金属钌化合物前体制备膜，涂层或粉末的方法，由此制备膜，涂层或粉末。

9. 发明申请

US20090205538A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090205538A1
公开(公告)日：2009-08-20
申请号：US12352239
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C09D4/00 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

10. 发明申请

US20090203928A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090203928A1
公开(公告)日：2009-08-13
申请号：US12352302
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C07F15/00
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

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