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1. 发明申请

US20090203917A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090203917A1
公开(公告)日：2009-08-13
申请号：US12352202
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C07F15/00
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式L1ML2的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的6电子给体阴离子配体，L2是取代或未取代的6电子给体阴离子配体，其中L1和L2相同或不同的制备有机金属化合物的方法，以及由有机金属化合物制备膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

2. 发明申请

US20090199739A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090199739A1
公开(公告)日：2009-08-13
申请号：US12352289
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C09D5/00 , C07F17/02
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式（L1）yM（L2）z的有机金属化合物，其中M是金属或准金属，L1相同或不同，并且是（i）取代或未取代的阴离子4电子给体配体或（ii）取代或未取代的阴离子4电子给体配体与侧挂中性2电子供体部分，L2相同或不同，为（i）取代或未取代的阴离子2电子供体配体或（ii）取代或未取代的中性2电子给体配体 ; y是2的整数; z为0〜2的整数; 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

3. 发明申请

US20090205968A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090205968A1
公开(公告)日：2009-08-20
申请号：US12352269
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C23C28/00 , C23C16/00 , H05H1/24
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

4. 发明申请

US20090205538A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090205538A1
公开(公告)日：2009-08-20
申请号：US12352239
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C09D4/00 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

5. 发明申请

US20090203928A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090203928A1
公开(公告)日：2009-08-13
申请号：US12352302
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： C07F15/00
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

6. 发明申请

US20090202740A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090202740A1
公开(公告)日：2009-08-13
申请号：US12352212
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominquez
IPC分类号： B05D5/12 , H05H1/24 , C25D3/38
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

7. 发明申请

US20090209777A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090209777A1
公开(公告)日：2009-08-20
申请号：US12352256
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： C07F17/02
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式（L1）M（L2）y的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的阴离子6电子供体配体，L2相同或不同，为（i）取代的或未取代的阴离子2电子供体配体，（ii）取代或未取代的阴离子4电子供体配体，（iii）取代或未取代的中性2电子供体配体，或（iv）取代或未取代的具有侧基的阴离子4电子给体配体中性2电子供体部分; y为1〜3的整数，并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

8. 发明申请

US20090200524A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090200524A1
公开(公告)日：2009-08-13
申请号：US12352186
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： H01B1/12 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

9. 发明申请

US20090208670A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090208670A1
公开(公告)日：2009-08-20
申请号：US12352320
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan Dominquez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan Dominquez
IPC分类号： B05D5/12 , H05H1/24 , C25D3/38
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

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