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1. 发明授权

US08153831B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US08153831B2
公开(公告)日：2012-04-10
申请号：US11900382
申请日：2007-09-11
申请人： David M. Thompson , David Walter Peters , Scott Houston Meiere
发明人： David M. Thompson , David Walter Peters , Scott Houston Meiere
IPC分类号： C07F11/00 , C07F9/00 , C23C16/00
CPC分类号： C07F17/00
摘要： This invention relates to organometallic compounds represented by the formula (L1)yM(L2)z-y wherein M is a Group 5 metal or a Group 6 metal, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer, e.g., a tungsten, tungsten nitride, tungsten carbide, or tungsten carbonitride layer, on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（L1）yM（L2）zy表示的有机金属化合物，其中M是第5族金属或第6族金属，L1是取代或未取代的阴离子6电子给体配体，L2相同或不同，是（i）取代或未取代的阴离子2电子给体配体，（ii）取代或未取代的阳离子2电子给体配体，或（iii）取代或未取代的中性2电子供体配体; y是1的整数，z是M的化合价; 并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法; 以及用于通过有机金属前体化合物的热或等离子体增强的解离在衬底上沉积金属和/或金属碳化物/氮化物层（例如钨，氮化钨，碳化钨或碳氮化钨）的方法，例如，通过CVD或ALD技术。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

2. 发明授权

US07238821B2 Method for large scale production of organometallic compounds 有权
标题翻译：大规模生产有机金属化合物的方法
公开(公告)号：US07238821B2
公开(公告)日：2007-07-03
申请号：US10678074
申请日：2003-10-06
申请人： Scott Houston Meiere , David Walter Peters
发明人： Scott Houston Meiere , David Walter Peters
IPC分类号： C07F7/00 , C07F11/00 , C07F17/00
CPC分类号： C07F7/003
摘要： This invention relates to a one pot method for large scale production of an organometallic compound comprising (i) reacting a hydrocarbon or heteroatom-containing material with a base material in the presence of a solvent and under reaction conditions sufficient to produce a first reaction mixture comprising a hydrocarbon or heteroatom-containing compound, (ii) adding a metal source compound to said first reaction mixture, (iii) reacting said hydrocarbon or heteroatom-containing compound with said metal source compound under reaction conditions sufficient to produce a second reaction mixture comprising said organometallic compound, and (iv) separating said organometallic compound from said second reaction mixture.
摘要翻译：本发明涉及一种用于大规模生产有机金属化合物的一锅法，其包括（i）在溶剂存在下和在足以产生第一反应混合物的反应条件下使烃或含杂原子材料与基材反应，所述反应条件足以产生包含含有烃或含杂原子的化合物，（ii）向所述第一反应混合物中加入金属源化合物，（iii）在足以产生第二反应混合物的反应条件下使所述烃或杂原子化合物与所述金属源化合物反应，有机金属化合物，和（iv）从所述第二反应混合物中分离所述有机金属化合物。

3. 发明申请

US20110206864A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20110206864A1
公开(公告)日：2011-08-25
申请号：US13101328
申请日：2011-05-05
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： C07F17/00 , B22F9/20 , H05H1/24 , C23C16/18
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在基底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

4. 发明授权

US07547796B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US07547796B2
公开(公告)日：2009-06-16
申请号：US11501075
申请日：2006-08-09
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： C07F17/00 , C07F9/00 , B01J31/00
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在衬底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

5. 发明授权

US07959986B2 Organometallic compounds, processes for the preparation thereof and methods of use thereof 有权
标题翻译：有机金属化合物，其制备方法及其使用方法
公开(公告)号：US07959986B2
公开(公告)日：2011-06-14
申请号：US12364197
申请日：2009-02-02
申请人： David Walter Peters , David M. Thompson
发明人： David Walter Peters , David M. Thompson
IPC分类号： H05H1/24
CPC分类号： C07F17/00
摘要： This invention relates to organometallic precursor compounds represented by the formula (Cp(R′)x)yM(H)z-y, a process for producing the organometallic precursor compounds, and a method for depositing a metal and/or metal carbide layer, e.g., Ta metal and/or TaC layer, on a substrate by the thermal or plasma enhanced disassociation of the organometallic precursor compounds, e.g., by CVD or ALD techniques. The metal and/or metal carbide layer is useful as a liner or barrier layer for conducting metals and high dielectric constant materials in integrated circuit manufacturing.
摘要翻译：本发明涉及由式（Cp（R'）x）yM（H）zy表示的有机金属前体化合物，有机金属前体化合物的制备方法，以及沉积金属和/或金属碳化物层的方法， Ta金属和/或TaC层，通过有机金属前体化合物的热或等离子体增强的分离，例如通过CVD或ALD技术在基底上。金属和/或金属碳化物层可用作集成电路制造中用于导电金属和高介电常数材料的衬垫或阻挡层。

6. 发明授权

US08114479B2 Diptube apparatus and delivery method 有权
标题翻译： Diptube设备和送货方式
公开(公告)号：US08114479B2
公开(公告)日：2012-02-14
申请号：US13101653
申请日：2011-05-05
申请人： Ronald F. Spohn , David Walter Peters
发明人： Ronald F. Spohn , David Walter Peters
IPC分类号： B05B17/00 , B29D23/00 , B67D7/00
CPC分类号： C23C16/4409 , C23C16/4482 , F16J15/0887 , F16J15/128 , Y10T428/13
摘要： This invention relates to a vapor or liquid phase reagent dispensing apparatus having a diptube and also a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
摘要翻译：本发明涉及一种蒸汽或液相试剂分配装置，其具有汲取管以及与顶壁构件和侧壁构件上的突起的硬化相对的平坦表面对准并接触的金属密封件，其中硬化的相对的平坦表面顶壁构件和突起的硬度大于金属密封件的硬度。分配装置可用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂。

7. 发明申请

US20080179767A1 APPARATUS AND METHOD FOR DELIVERING VAPOR PHASE REAGENT TO A DEPOSITION CHAMBER 有权
标题翻译：用于将蒸气相试剂递送到沉积室的装置和方法
公开(公告)号：US20080179767A1
公开(公告)日：2008-07-31
申请号：US12014194
申请日：2008-01-15
申请人： Ronald F. Spohn , David Walter Peters
发明人： Ronald F. Spohn , David Walter Peters
IPC分类号： B01D19/00 , B01D47/02 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4482 , F16J15/0887 , F16J15/128 , Y10T428/13
摘要： This invention relates to a vapor or liquid phase reagent dispensing apparatus having a: metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus also has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member.The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
摘要翻译：本发明涉及一种蒸汽或液相试剂分配装置，具有：金属密封件对准并与顶壁构件的硬化相对的平坦表面和侧壁构件上的突起接触，其中顶壁的硬化相对的平坦表面构件和突起的硬度大于金属密封件的硬度。该装置还具有温度传感器和源化学水平传感器，其通过顶壁构件的中心定位的部分延伸并且大致垂直向下延伸到位于底壁构件上方的集水腔。分配装置可用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂。

8. 发明申请

US20080182010A1 BUBBLER APPARATUS AND DELIVERY METHOD 有权
标题翻译： BUBBLER装置和送货方式
公开(公告)号：US20080182010A1
公开(公告)日：2008-07-31
申请号：US12014270
申请日：2008-01-15
申请人： Ronald F. Spohn , David Walter Peters
发明人： Ronald F. Spohn , David Walter Peters
IPC分类号： C23C16/448 , C23C16/54 , B67D5/00 , B05B17/00
CPC分类号： C23C16/4409 , C23C16/4482 , F16J15/0887 , F16J15/128 , Y10T428/13
摘要： This invention relates to vapor phase reagent dispensing apparatus having a bubbler tube and also a metal seal aligned and in contact with the hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
摘要翻译：本发明涉及一种气相试剂分配装置，其具有起泡管和与顶壁构件的硬化相对的平坦表面对准并与侧壁构件上的突起接触的金属密封件，其中，硬化的相对的平坦表面顶壁构件和突起的硬度大于金属密封件的硬度。分配装置可用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂。

9. 发明授权

US08512635B2 Apparatus and method for delivering vapor phase reagent to a deposition chamber 有权
标题翻译：将蒸气相试剂输送到沉积室的装置和方法
公开(公告)号：US08512635B2
公开(公告)日：2013-08-20
申请号：US12014194
申请日：2008-01-15
申请人： Ronald F. Spohn , David Walter Peters
发明人： Ronald F. Spohn , David Walter Peters
IPC分类号： G01N21/00
CPC分类号： C23C16/4409 , C23C16/4482 , F16J15/0887 , F16J15/128 , Y10T428/13
摘要： This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of the metal seal. The apparatus also has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a sump cavity centrally located on a bottom wall member. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
摘要翻译：本发明涉及一种蒸汽或液相试剂分配装置，其具有对准并与顶壁构件的硬化相对的平坦表面和侧壁构件上的突起接触的金属密封件，其中顶壁构件的硬化相对的平坦表面并且突起的硬度大于金属密封件的硬度。该装置还具有温度传感器和源化学水平传感器，其通过顶壁构件的中心定位的部分延伸并且大致垂直向下延伸到位于底壁构件上方的集水腔。分配装置可用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂。

10. 发明申请

US20080178809A1 DIPTUBE APPARATUS AND METHOD FOR DELIVERING VAPOR PHASE REAGENT TO A DEPOSITION CHAMBER 有权
标题翻译：用于将蒸气相试剂递送到沉积室的DIPTUBE装置和方法
公开(公告)号：US20080178809A1
公开(公告)日：2008-07-31
申请号：US12014237
申请日：2008-01-15
申请人： Ronald F. Spohn , David Walter Peters
发明人： Ronald F. Spohn , David Walter Peters
IPC分类号： C23C16/448 , B05C11/10 , B01D1/30
CPC分类号： C23C16/4409 , C23C16/4482 , F16J15/0887 , F16J15/128 , Y10T428/13
摘要： This invention relates to a liquid phase reagent dispensing apparatus having a diptube and alsoa metal seal aligned and in contact with hardened opposing flat surfaces of top wall member and a protuberance[ [;] ]on a side wall member, wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal.The apparatus further has a temperature sensor and a source chemical level sensor extending through a centrally located portion of the top wall member and generally vertically downwardly to a cavity centrally located on the a bottom wall member [ [,]] . The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
摘要翻译：液相试剂分配装置本发明涉及一种液相试剂分配装置，其具有汲取管，以及金属密封件，其对准并与顶壁构件的硬化相对的平坦表面和侧壁构件上的突起[[]接触），其中所述硬化的相对平面所述顶壁构件和所述突起的表面具有大于所述金属密封件的硬度的硬度。该设备还具有温度传感器和源化学水平传感器，其通过顶壁构件的中心定位的部分并且大致垂直向下延伸到位于底壁构件[[，]）上方的空腔。分配装置可用于分配诸如用于在半导体材料和装置的制造中沉积材料的前体的试剂。

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