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    • 1. 发明授权
    • System for inducing tachycardia utilizing near field T-wave sensing
    • 用于诱导使用近场T波感测的心动过速的系统
    • US5899929A
    • 1999-05-04
    • US014178
    • 1998-01-27
    • David ThompsonHendrikus A. WestendorpMalcolm J.S. Begemann
    • David ThompsonHendrikus A. WestendorpMalcolm J.S. Begemann
    • A61N1/362A61N1/37A61N1/38A61N1/39
    • A61N1/3702A61N1/3621A61N1/385
    • A system and method are provided for inducing ventricular tachycardia in a patient to enable testing to determine the optimum parameters for anti-tachycardia stimulation. The implantable device provides for overdrive pacing of the heart for a short sequence, followed by delivery of a series of pulse pairs. Each pulse pair has a first stimulus pulse delivered at the same or similar overdrive rate, and an inducing pulse which is delivered in timed relation to the evoked T-wave, preferably during the falling edge portion of the T-wave. In this way, each cycle the inducing pulse is timed for efficaciously inducing tachycardia. The timing of the inducing pulse is enhanced by near field sensing of the T-wave at about the location where the pulses are delivered, preferably using bipolar sensing and/or sense circuitry designed to recover the signal with an optimum time response. In one preferred embodiment, near field sensing is enabled by use of an FDC circuit. In another preferred embodiment, near field sensing is provided by a pacing lead having bipolar electrodes where the ring electrode is spaced less than 1 mm proximal to the tip electrode.
    • 提供了一种系统和方法,用于诱导患者的室性心动过速以使测试能够确定用于抗心动过速刺激的最佳参数。 可植入装置提供用于短序列的心脏超速起搏,随后递送一系列脉冲对。 每个脉冲对具有以相同或相似的过驱动速率传送的第一激励脉冲,以及诱导脉冲,优选地在T波的下降沿部分期间以与激发的T波定时关系递送。 以这种方式,诱导脉冲的每个周期被定时以有效诱发心动过速。 诱导脉冲的定时通过在输送脉冲的位置处的T波的近场感测来增强,优选地使用设计成以最佳时间响应恢复信号的双极感测和/或感测电路。 在一个优选实施例中,通过使用FDC电路来实现近场感测。 在另一个优选实施例中,近场感测由具有双极电极的起搏引线提供,其中环形电极在尖端电极附近间隔小于1mm。
    • 7. 发明申请
    • Deposition Of Films Containing Alkaline Earth Metals
    • 沉积含碱性地球金属的薄膜
    • US20140004274A1
    • 2014-01-02
    • US13923599
    • 2013-06-21
    • David Thompson
    • David Thompson
    • C23C16/40
    • C23C16/404
    • Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.
    • 描述了通过化学反应将金属膜沉积在基底上的方法。 该方法包括:将衬底暴露于包含第2族金属的第一反应气体和包含卤化物的第二反应气体的流动,以在衬底上形成含有金属卤化物的第一层; 将衬底暴露于包含氧化剂的第三反应气体,以在衬底期间在衬底上形成含有金属过氧化物或金属氢氧化物的第二层; 将基底暴露于加热或等离子体以将金属过氧化物或金属氢氧化物转化为金属氧化物。 可以重复该方法以形成没有金属碳酸盐杂质的金属氧化物膜。