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1. 发明授权

US08769802B1 Method of fabrication an ultra-thin quartz resonator 有权
标题翻译：制造超薄石英谐振器的方法
公开(公告)号：US08769802B1
公开(公告)日：2014-07-08
申请号：US12831028
申请日：2010-07-06
申请人： David T. Chang , Randall L. Kubena , Pamela R. Patterson
发明人： David T. Chang , Randall L. Kubena , Pamela R. Patterson
IPC分类号： H04R31/00
CPC分类号： H03H9/172 , H03H3/04
摘要： A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.
摘要翻译：在本申请中提出了一种用于制造谐振器的方法。该方法包括提供处理衬底，提供主体衬底，提供包括与第二表面相对的第一表面的石英衬底，将中介层膜施加到石英衬底的第一表面，将石英衬底接合到处理衬底，其中插入膜设置在石英基板和手柄基板之间，使石英基板的第二表面变薄，去除一部分键合的石英基板以暴露中间层膜的一部分，将石英基板接合到主基板，并且移除手柄基板和内插膜，从而释放石英基板。

2. 发明授权

US07647688B1 Method of fabricating a low frequency quartz resonator 有权
标题翻译：制造低频石英谐振器的方法
公开(公告)号：US07647688B1
公开(公告)日：2010-01-19
申请号：US12189617
申请日：2008-08-11
申请人： David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
发明人： David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
IPC分类号： H04R31/00
CPC分类号： H04R31/00 , H04R19/005 , Y10T29/42 , Y10T29/49005 , Y10T29/4908
摘要： A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.
摘要翻译：一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器到基板接合焊盘，并且移除硅手柄。

3. 发明授权

US07802356B1 Method of fabricating an ultra thin quartz resonator component 有权
标题翻译：制造超薄石英谐振器元件的方法
公开(公告)号：US07802356B1
公开(公告)日：2010-09-28
申请号：US12034852
申请日：2008-02-21
申请人： David T. Chang , Randall L. Kubena , Pamela R. Patterson
发明人： David T. Chang , Randall L. Kubena , Pamela R. Patterson
IPC分类号： H04R31/00
CPC分类号： H03H9/172 , H03H3/04
摘要： A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.
摘要翻译：在本申请中提出了一种用于制造谐振器的方法。该方法包括提供处理衬底，提供主体衬底，提供包括与第二表面相对的第一表面的石英衬底，将中介层膜施加到石英衬底的第一表面，将石英衬底接合到处理衬底，其中插入膜设置在石英基板和手柄基板之间，使石英基板的第二表面变薄，去除一部分键合的石英基板以暴露中间层膜的一部分，将石英基板接合到主基板，并且移除手柄基板和内插膜，从而释放石英基板。

4. 发明授权

US07851971B2 Low frequency quartz based MEMS resonators and method of fabricating the same 有权
标题翻译：低频石英MEMS谐振器及其制造方法
公开(公告)号：US07851971B2
公开(公告)日：2010-12-14
申请号：US12577420
申请日：2009-10-12
申请人： David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
发明人： David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
IPC分类号： H01L41/08
CPC分类号： H04R31/00 , H04R19/005 , Y10T29/42 , Y10T29/49005 , Y10T29/4908
摘要： A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.
摘要翻译：一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器到基板接合焊盘，并且移除硅手柄。

5. 发明授权

US08503161B1 Supercapacitor cells and micro-supercapacitors 有权
标题翻译：超级电容器和微型超级电容器
公开(公告)号：US08503161B1
公开(公告)日：2013-08-06
申请号：US13070467
申请日：2011-03-23
申请人： David T. Chang , Pamela R. Patterson , Ping Liu
发明人： David T. Chang , Pamela R. Patterson , Ping Liu
IPC分类号： H01G9/00 , H01G9/08
CPC分类号： H01G11/10 , B82Y10/00 , B82Y40/00 , H01G11/28 , H01G11/36 , H01G11/46 , H01G11/82 , H01L28/91 , H01L29/0676 , H01L29/66439 , H01L29/66469 , H01L29/775 , Y02E60/13
摘要： This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.
摘要翻译：本发明提供了具有高能量密度和高功率密度的微型超级电容器。在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。使用接合工艺将盖结合到腔体以形成气密密封。根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。示例性的微超级电容器是长度为约50-100μm的立方体。没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

6. 发明授权

US08778800B1 Methods of making supercapacitor cells and micro-supercapacitors 有权
标题翻译：制造超级电容器电池和微超级电容器的方法
公开(公告)号：US08778800B1
公开(公告)日：2014-07-15
申请号：US13887370
申请日：2013-05-06
申请人： David T. Chang , Pamela R. Patterson , Ping Liu
发明人： David T. Chang , Pamela R. Patterson , Ping Liu
IPC分类号： H01L21/44
CPC分类号： H01G11/10 , B82Y10/00 , B82Y40/00 , H01G11/28 , H01G11/36 , H01G11/46 , H01G11/82 , H01L28/91 , H01L29/0676 , H01L29/66439 , H01L29/66469 , H01L29/775 , Y02E60/13
摘要： This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.
摘要翻译：本发明提供了具有高能量密度和高功率密度的微型超级电容器。在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。使用接合工艺将盖结合到腔体以形成气密密封。根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。示例性的微超级电容器是长度为约50-100μm的立方体。没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

7. 发明授权

US07085122B2 MEMS tunable capacitor based on angular vertical comb drives 失效
标题翻译：基于角度垂直梳齿驱动的MEMS可调电容器
公开(公告)号：US07085122B2
公开(公告)日：2006-08-01
申请号：US10850958
申请日：2004-05-21
申请人： Ming C. Wu , Hung D. Nguyen , Doo-Young Hah , Pamela R. Patterson
发明人： Ming C. Wu , Hung D. Nguyen , Doo-Young Hah , Pamela R. Patterson
IPC分类号： H01G7/00
CPC分类号： H01G5/06 , B81B2201/0221 , B81B2203/0136 , B81C1/00007
摘要： A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.
摘要翻译：描述了具有角度垂直梳驱动（AVC）致动器的MEMS可调谐电容器，其中在紧凑的空间中实现高电容和宽的连续调谐范围。梳指旋转一个较小的垂直角度，这允许比常规侧梳驱动装置更宽的调谐范围。该装置的制造是直接的，并涉及单个深反应离子蚀刻步骤，随后释放和平面外组装角梳。

8. 发明授权

US08332053B1 Method for fabrication of a stretchable electronic skin 有权
标题翻译：可拉伸电子皮肤的制造方法
公开(公告)号：US08332053B1
公开(公告)日：2012-12-11
申请号：US12431042
申请日：2009-04-28
申请人： Pamela R. Patterson , Kevin S. Holabird , Christopher P. Henry
发明人： Pamela R. Patterson , Kevin S. Holabird , Christopher P. Henry
IPC分类号： A61N1/00
CPC分类号： H05K3/0014 , A61B2562/0247 , A61B2562/0271 , A61B2562/028 , A61B2562/164 , A61N1/0484 , H01L23/5387 , H01L2924/0002 , H05K1/0283 , H05K2201/0133 , H05K2201/0162 , H05K2201/09681 , H01L2924/00
摘要： In one implementation, a method of fabrication of stretchable electronic skin is provided. The method may include receiving an elastic material net. An elastic conductor mesh is formed on the elastic material net. A device is electrically bonded to the elastic conductor mesh. The implementation may further include forming a mold comprising a net pattern on a substrate and creating the elastic material net by coating the mold with an elastic material precursor, and then removing the elastic net from the substrate with the elastic conductor thereon. In one embodiment, a stretchable electronic skin including a net structure having a non-conducting elastic material with an elastic conductor mesh formed on the non-conducting elastic material, and a device electrically connected to the elastic conductor mesh.
摘要翻译：在一个实施方案中，提供了一种制造可拉伸电子皮肤的方法。该方法可以包括接收弹性材料网。在弹性材料网上形成弹性导体网。器件电连接到弹性导体网。该实施方案还可以包括在基材上形成包括网状图案的模具，并通过用弹性材料前体涂覆模具来形成弹性材料网，然后用其上的弹性导体从基材上去除弹性网。在一个实施例中，包括具有非导电弹性材料的网状结构的可拉伸电子表皮，其具有形成在非导电弹性材料上的弹性导体网，以及电连接到弹性导体网的装置。

9. 发明授权

US09508552B1 Method for forming metallic sub-collector for HBT and BJT transistors 有权
标题翻译： HBT和BJT晶体管金属子集电极形成方法
公开(公告)号：US09508552B1
公开(公告)日：2016-11-29
申请号：US14481676
申请日：2014-09-09
申请人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
发明人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
IPC分类号： H01L21/44 , H01L21/48 , H01L21/331 , H01L21/20 , H01L29/66 , H01L23/373 , H01L23/535 , H01L29/40 , H01L29/49 , H01L21/74 , H01L21/304
CPC分类号： H01L21/2007 , H01L21/304 , H01L21/6835 , H01L21/74 , H01L21/743 , H01L23/3732 , H01L23/3738 , H01L23/535 , H01L29/401 , H01L29/41708 , H01L29/452 , H01L29/495 , H01L29/66242 , H01L29/66265 , H01L29/66318 , H01L29/7371 , H01L2221/6835 , H01L2221/68368
摘要： A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
摘要翻译：一种具有发射极，基极和集电极的异质结双极晶体管，所述异质结双极晶体管包括电和热耦合到集电极的金属副集电极，其中所述金属副集电极包括金属薄膜，并且集电极触点电连接到金属副收集器。

10. 发明授权

US08860092B1 Metallic sub-collector for HBT and BJT transistors 有权
标题翻译：用于HBT和BJT晶体管的金属子集电极
公开(公告)号：US08860092B1
公开(公告)日：2014-10-14
申请号：US12234911
申请日：2008-09-22
申请人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
发明人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
IPC分类号： H01L31/0328 , H01L31/0336 , H01L27/082 , H01L29/66 , H01L29/737
CPC分类号： H01L21/2007 , H01L21/304 , H01L21/6835 , H01L21/74 , H01L21/743 , H01L23/3732 , H01L23/3738 , H01L23/535 , H01L29/401 , H01L29/41708 , H01L29/452 , H01L29/495 , H01L29/66242 , H01L29/66265 , H01L29/66318 , H01L29/7371 , H01L2221/6835 , H01L2221/68368
摘要： A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
摘要翻译：一种具有发射极，基极和集电极的异质结双极晶体管，所述异质结双极晶体管包括电和热耦合到集电极的金属副集电极，其中所述金属副集电极包括金属薄膜，并且集电极触点电连接到金属副收集器。

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