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    • 5. 发明授权
    • Optoelectronic device with patterned ion implant subcollector
    • 具有图案离子注入子集电极的光电器件
    • US07259444B1
    • 2007-08-21
    • US10895517
    • 2004-07-20
    • Mary Y. ChenDonald A. Hitko
    • Mary Y. ChenDonald A. Hitko
    • H01L31/075H01L31/105H01L31/117H01L31/119
    • H01L31/1105H01L31/0304H01L31/105
    • In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a second dopant type. An intermediate layer is provided having a substantially intrinsic semiconductor material. An upper layer contact is provided having a portion with a generally circular interior facing edge. The implant region has a first portion having an outer periphery substantially nonoverlapping with the interior facing edge of the upper layer contact. The implant region includes a contact portion located beyond the upper layer contact. A connecting portion couples the first portion and the contact portion of the implant region. In one embodiment, the device includes a heterojunction bipolar transistor coupled to the pin photo diode. The transistor may have a patterned implant region in the semi-insulating substrate or layer comprising the first dopant type.
    • 在一个实施例中,提供了具有包括半绝缘衬底或层的引脚光电二极管的光电子器件,其具有第一掺杂剂类型的图案化注入区域。 引脚光电二极管包括具有第二掺杂剂类型的半导体材料的上层。 提供具有基本上本征的半导体材料的中间层。 提供具有具有大致圆形内部面向边缘的部分的上层接触。 植入区域具有第一部分,该第一部分具有与上层接触件的内部相对边缘基本上不重叠的外周边。 植入区域包括位于上层接触层之外的接触部分。 连接部分联接植入区域的第一部分和接触部分。 在一个实施例中,该器件包括耦合到引脚光电二极管的异质结双极晶体管。 晶体管可以在半绝缘衬底或包含第一掺杂剂类型的层中具有图案化注入区域。
    • 8. 发明授权
    • Oxygen sensor interface circuit with optimized gain characteristics
    • 具有优化增益特性的氧传感器接口电路
    • US5467034A
    • 1995-11-14
    • US349573
    • 1994-12-05
    • Gregory J. ManloveDonald A. Hitko
    • Gregory J. ManloveDonald A. Hitko
    • F02D41/14H03F1/30H03K5/22G06G7/18
    • F02D41/1493H03F1/303
    • A sensor interface circuit and method are provided which realizes common mode rejection, compensates for external input impedance and internal loads and achieves a desired transfer response. The interface circuit is particularly useful for amplifying and conditioning signals generated by an oxygen sensor on an automotive vehicle. The sensor interface circuit has first and second inputs for receiving input voltages from a sensor which are joined together to provide a differential voltage representative of the voltage potential between the first and second inputs. RF filtering circuitry is coupled to both inputs. An amplifier having a gain and a first input receives a differential voltage and has an output coupled to a grounded switch for providing an output signal referenced to reference ground. A supply voltage is applied across the inputs and a current is supplied to one of the inputs. A comparator compares a voltage potential on the selected one of the first and second inputs and provides an output which controls a switch for switching the interface circuit output between the amplifier output and a predetermined voltage output. The circuit is particularly useful for automotive applications for interfacing with an oxygen sensor to compensate for the load effects associated with the RF filtering circuitry where voltage excursions may occur between the common mode sensor ground and reference ground.
    • 提供了实现共模抑制的传感器接口电路和方法,补偿外部输入阻抗和内部负载并实现期望的传输响应。 接口电路对于放大和调节由机动车辆上的氧传感器产生的信号特别有用。 传感器接口电路具有用于接收来自传感器的输入电压的第一和第二输入端,所述传感器连接在一起以提供代表第一和第二输入端之间的电压电位的差分电压。 RF滤波电路耦合到两个输入。 具有增益和第一输入的放大器接收差分电压,并且具有耦合到接地开关的输出,用于提供参考参考地的输出信号。 在输入端施加电源电压,并向其中一个输入端提供电流。 比较器比较所选择的第一和第二输入端之间的电压电位,并提供控制用于切换放大器输出和预定电压输出之间的接口电路输出的开关的输出。 该电路对于与氧传感器接口的汽车应用特别有用,以补偿与RF滤波电路相关联的负载效应,其中在共模传感器接地和参考地之间可能发生电压偏移。