专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06521118B1 Semiconductor etching process and apparatus 有权
标题翻译：半导体蚀刻工艺和设备
公开(公告)号：US06521118B1
公开(公告)日：2003-02-18
申请号：US09600376
申请日：2000-11-22
申请人： David Starosvetsky , Mark Kovler , Joseph Yahalom , Yael Nemirovsky
发明人： David Starosvetsky , Mark Kovler , Joseph Yahalom , Yael Nemirovsky
IPC分类号： C25F300
CPC分类号： H01L21/3063 , C25F3/12 , C25F7/00 , H01L21/30635
摘要： There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.
摘要翻译：提供了一种用于蚀刻半导体材料的方法，包括以下步骤：提供含有蚀刻电解质的电化学电池，所述蚀刻电解质选自酸性电解质溶液，碱性溶液，中性溶液和熔融电解质; 将半导体材料浸渍在蚀刻电解质中，由此半导体材料的至少一个表面与蚀刻电解质接触; 然后对半导体材料施加负偏压; 并且在继续对半导体材料进行负偏压的同时，用从紫外线，可见光和红外光组中选择的光照射与蚀刻电解质接触的半导体材料的至少一个表面的至少一部分。还提供了用于实现本发明方法的设备以及如此蚀刻的半导体材料。

2. 发明授权

US09568367B2 Sensing device having a thermal antenna and a method for sensing electromagnetic radiation 有权
标题翻译：具有热天线的感测装置和用于感测电磁辐射的方法
公开(公告)号：US09568367B2
公开(公告)日：2017-02-14
申请号：US13697375
申请日：2011-05-23
申请人： Yael Nemirovsky , Dan Corcos , Shlomo Katz , Alexander Svetlitza , Madlena Dolgin
发明人： Yael Nemirovsky , Dan Corcos , Shlomo Katz , Alexander Svetlitza , Madlena Dolgin
IPC分类号： G01J5/00 , G01J5/02 , G01T7/00 , H01Q7/00 , H01Q9/27 , H01Q15/00 , H01Q19/10 , H01Q21/06
CPC分类号： G01J5/02 , G01J5/024 , G01T7/00 , H01Q7/00 , H01Q9/27 , H01Q15/0013 , H01Q19/10 , H01Q21/061
摘要： A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element.
摘要翻译：提供了一种方法和感测装置。感测装置可以包括：热天线，其包括电阻材料并且具有尺寸为微米级或亚微米级的横截面。热天线可以接收电磁辐射，并将其直接转换成热。感测装置还可以包括支撑元件，热传感器，其布置成响应于热传感器的感测区域的温度产生检测信号;保持元件，其可以支撑并热隔离热天线和热传感器并热隔离以及可以处理检测信号以提供关于由热天线直接转换为热量的电磁辐射的信息的读出电路。热天线和热传感器在空间上与支撑元件分离。

3. 发明申请

US20140151581A1 TERAHERTZ SOURCE 审中-公开
标题翻译： TERAHERTZ来源
公开(公告)号：US20140151581A1
公开(公告)日：2014-06-05
申请号：US14093543
申请日：2013-12-02
申请人： Yael Nemirovsky , Dan Corcos , Gabriel Peled , Alexander Svetlitza , Sharon Bar-Lev-Shefi
发明人： Yael Nemirovsky , Dan Corcos , Gabriel Peled , Alexander Svetlitza , Sharon Bar-Lev-Shefi
IPC分类号： G21K5/00
CPC分类号： G01N21/3581
摘要： A TeraHertz radiating system that may include a blackbody arranged to emit blackbody radiation that comprises a TeraHertz component, a visible light component and an infrared component; and a filtering module that is arranged to pass the TeraHertz component and to reject the visible light component and the infrared component to provide filtered radiation.
摘要翻译： TeraHertz辐射系统，其可以包括布置成发射黑体辐射的黑体，所述黑体辐射包括TeraHertz分量，可见光分量和红外分量; 以及过滤模块，其布置成使TeraHert分量通过并且拒绝可见光分量和红外分量以提供经滤波的辐射。

4. 发明授权

US07527999B2 Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same 失效
标题翻译：用于红外线传感器的非冷却微电热计的Cd1-xZnxS高性能TCR材料及其制造方法
公开(公告)号：US07527999B2
公开(公告)日：2009-05-05
申请号：US11294677
申请日：2005-12-06
申请人： Sara Stolyarova , Yehuda Sinai , Moshe Weinstein , Avi Shai , Yael Nemirovsky
发明人： Sara Stolyarova , Yehuda Sinai , Moshe Weinstein , Avi Shai , Yael Nemirovsky
IPC分类号： H01L21/00
CPC分类号： C23C16/306 , C23C14/0629 , C23C14/5806 , G01J5/20 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02557 , H01L21/0262
摘要： A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.
摘要翻译：具有高电阻热系数的Cd1-xZnxS薄膜材料在1.5％至3.7％的范围内。 Cd1-xZnxS材料具有优异的特性用于微热辐射计型非制冷红外传感器。薄膜材料可以沉积在微热辐射计膜或任何其他晶片上以用于不同的应用。可以使用MOCVD技术，热蒸发或不同的技术沉积膜材料以在晶片上形成薄膜材料。可以修改Cd1-xZnxS性质，控制某些沉积参数和不同的退火技术。该过程在与CMOS技术兼容的温度下进行。

5. 发明授权

US07423794B2 Device and method for stacked multi-level uncoupled electrostatic actuators 失效
标题翻译：堆叠多级非耦合静电执行器的装置和方法
公开(公告)号：US07423794B2
公开(公告)日：2008-09-09
申请号：US10545949
申请日：2004-02-15
申请人： David Elata , Ofir Bochobza-Degani , Yael Nemirovsky
发明人： David Elata , Ofir Bochobza-Degani , Yael Nemirovsky
IPC分类号： G02B26/08 , G02B26/00
CPC分类号： B81B3/0062 , B81B2201/042 , B81B2203/058 , B81C2201/019 , G01J5/20 , G01J2005/0077 , G02B26/0841 , H01L27/1203 , H01L27/14669 , H02N1/006
摘要： A multi-level decoupled micro-actuator device comprising a first level substrate (410), a second level frame (420) stacked on said first level substrate (410), a third level frame (430) stacked on said second level frame (420).
摘要翻译：一种多级解耦微致动器装置，包括第一级衬底（410），堆叠在所述第一级衬底（410）上的第二级框架（420），堆叠在所述第二级框架（420）上的第三级框架）。

6. 发明授权

US06395192B1 Method and apparatus for removing native oxide layers from silicon wafers 失效
标题翻译：从硅晶片去除天然氧化物层的方法和装置
公开(公告)号：US06395192B1
公开(公告)日：2002-05-28
申请号：US09318608
申请日：1999-05-26
申请人： Yael Nemirovsky , Sara Stolyarova , Benjamin Brosilow
发明人： Yael Nemirovsky , Sara Stolyarova , Benjamin Brosilow
IPC分类号： B44C122
CPC分类号： H01L21/02046 , B08B7/0057 , H01L21/31116
摘要： A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.
摘要翻译：一种用于通过将硅晶片暴露于包括NF3的蚀刻剂气体同时将晶片暴露于紫外线辐射而将硅晶片暴露于紫外线辐射的同时，从硅晶片上选择性地去除天然氧化物层而不显着影响下面的硅或其上可能存在的其它材料的方法和装置，以及将晶片加热至100-400℃的温度

7. 发明授权

US09518953B2 Ion sensitive detector 有权
标题翻译：离子敏感检测器
公开(公告)号：US09518953B2
公开(公告)日：2016-12-13
申请号：US13604661
申请日：2012-09-06
申请人： Yael Nemirovsky , Lior Gal , Igor Brouk
发明人： Yael Nemirovsky , Lior Gal , Igor Brouk
IPC分类号： G01N27/414
CPC分类号： G01N27/4146
摘要： An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.
摘要翻译：一种ISFET检测器，用于确定流体中目标离子的浓度，该装置包括：半导体衬底，其包括分别具有源电极和漏电极的源极和漏极以及衬底中的沟道区域; 覆盖通道区域的绝缘材料; 形成在所述绝缘材料上的栅电极; 可在通道区域中形成电场的参考电极; 累积器，其包括厚度小于或等于约2nm（纳米）的材料层，其累积一定量的目标离子以响应于流体中目标离子的浓度; 形成有与栅电极分离的蓄电池的导电材料层; 以及将导电材料层电连接到栅电极的导电元件。

8. 发明申请

US20130142215A1 Sensing device having a thermal antenna and a method for sensing electromagnetic radiation 有权
标题翻译：具有热天线的感测装置和用于感测电磁辐射的方法
公开(公告)号：US20130142215A1
公开(公告)日：2013-06-06
申请号：US13697375
申请日：2011-05-23
申请人： Yael Nemirovsky , Dan Corcos , Shlomo Katz , Alexander Svetlitza , Madlena Dolgin
发明人： Yael Nemirovsky , Dan Corcos , Shlomo Katz , Alexander Svetlitza , Madlena Dolgin
IPC分类号： G01J5/02 , G01T7/00
CPC分类号： G01J5/02 , G01J5/024 , G01T7/00 , H01Q7/00 , H01Q9/27 , H01Q15/0013 , H01Q19/10 , H01Q21/061
摘要： A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element.
摘要翻译：提供了一种方法和感测装置。感测装置可以包括：热天线，其包括电阻材料并且具有尺寸为微米级或亚微米级的横截面。热天线可以接收电磁辐射，并将其直接转换成热。感测装置还可以包括支撑元件，热传感器，其布置成响应于热传感器的感测区域的温度产生检测信号;保持元件，其可以支撑并热隔离热天线和热传感器并热隔离以及可以处理检测信号以提供关于由热天线直接转换为热量的电磁辐射的信息的读出电路。热天线和热传感器在空间上与支撑元件分离。

9. 发明申请

US20130056353A1 ION SENSITIVE DETECTOR 有权
标题翻译：离子敏感检测器
公开(公告)号：US20130056353A1
公开(公告)日：2013-03-07
申请号：US13604661
申请日：2012-09-06
申请人： Yael Nemirovsky , Lior Gal , Igor Brouk
发明人： Yael Nemirovsky , Lior Gal , Igor Brouk
IPC分类号： G01N27/414
CPC分类号： G01N27/4146
摘要： An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.
摘要翻译：一种ISFET检测器，用于确定流体中目标离子的浓度，该装置包括：半导体衬底，其包括分别具有源电极和漏电极的源极和漏极以及衬底中的沟道区域; 覆盖通道区域的绝缘材料; 形成在所述绝缘材料上的栅电极; 可在通道区域中形成电场的参考电极; 累积器，其包括厚度小于或等于约2nm（纳米）的材料层，其累积一定量的目标离子以响应于流体中目标离子的浓度; 形成有与栅电极分离的蓄电池的导电材料层; 以及将导电材料层电连接到栅电极的导电元件。

10. 发明授权

US07544979B2 Ion concentration transistor and dual-mode sensors 失效
标题翻译：离子浓度晶体管和双模传感器
公开(公告)号：US07544979B2
公开(公告)日：2009-06-09
申请号：US10825123
申请日：2004-04-16
申请人： Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
发明人： Arkadiy Morgenshtein , Uri Dinnar , Yael Nemirovsky
IPC分类号： G01N27/00 , G01N27/414
CPC分类号： G01N27/4148
摘要： An ion concentration sensor produces a signal reflective of the ion concentration within a solution. The ion concentration sensor is based on an ion sensitive transistor having a solution input, a reference input, a diffusion input, and a diffusion output. The ion sensitive transistor is connected as a pass transistor, such that the diffusion output provides an electrical signal indicating an ion concentration in a solution contacting the solution input.
摘要翻译：离子浓度传感器产生反映溶液中离子浓度的信号。离子浓度传感器基于具有溶液输入，参考输入，扩散输入和扩散输出的离子敏感晶体管。离子敏感晶体管作为传输晶体管连接，使得扩散输出提供指示接触溶液输入的溶液中的离子浓度的电信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式