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1. 发明授权

US06521118B1 Semiconductor etching process and apparatus 有权
标题翻译：半导体蚀刻工艺和设备
公开(公告)号：US06521118B1
公开(公告)日：2003-02-18
申请号：US09600376
申请日：2000-11-22
申请人： David Starosvetsky , Mark Kovler , Joseph Yahalom , Yael Nemirovsky
发明人： David Starosvetsky , Mark Kovler , Joseph Yahalom , Yael Nemirovsky
IPC分类号： C25F300
CPC分类号： H01L21/3063 , C25F3/12 , C25F7/00 , H01L21/30635
摘要： There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.
摘要翻译：提供了一种用于蚀刻半导体材料的方法，包括以下步骤：提供含有蚀刻电解质的电化学电池，所述蚀刻电解质选自酸性电解质溶液，碱性溶液，中性溶液和熔融电解质; 将半导体材料浸渍在蚀刻电解质中，由此半导体材料的至少一个表面与蚀刻电解质接触; 然后对半导体材料施加负偏压; 并且在继续对半导体材料进行负偏压的同时，用从紫外线，可见光和红外光组中选择的光照射与蚀刻电解质接触的半导体材料的至少一个表面的至少一部分。还提供了用于实现本发明方法的设备以及如此蚀刻的半导体材料。

2. 发明授权

US07494936B2 Method for electrochemical etching of semiconductor material using positive potential dissolution (PPD) in solutions free from hydrogen fluoride (HF) 失效
标题翻译：使用正电位溶解（PPD）在不含氟化氢（HF）的溶液中电化学腐蚀半导体材料的方法
公开(公告)号：US07494936B2
公开(公告)日：2009-02-24
申请号：US11129578
申请日：2005-05-16
申请人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
发明人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C25F3/12 , H01L21/3063
摘要： A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.
摘要翻译：在不含氢氟酸（无HF溶液）的溶液中使用正电位溶解（PPD）对半导体材料进行电化学蚀刻的方法。该方法包括将切割的半导体材料浸入蚀刻溶液中，并且以非常高的正（阳极）电位进行正偏压，从而显着提高半导体材料的阳极电流密度（以A / cm 2测量）的值。在非常高的正（阳极）电位下施加正偏压，与在蚀刻溶液接触和润湿的半导体材料表面上特别地控制和引导照明相结合。这是为了实现对半导体材料的蚀刻速率和程度的积极的协同效应而进行的必要和充分的时间段。

3. 发明申请

US20060254928A1 Method for electrochemical etching of semiconductor material using positive potential dissolution (PPD) in HF-free solutions 失效
标题翻译：在无HF溶液中使用正电位溶解（PPD）对半导体材料进行电化学蚀刻的方法
公开(公告)号：US20060254928A1
公开(公告)日：2006-11-16
申请号：US11129578
申请日：2005-05-16
申请人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
发明人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
IPC分类号： C25F3/12 , C25B9/00
CPC分类号： C25F3/12 , H01L21/3063
摘要： A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in hydrofluoride (HF)-free solutions. The method includes subjecting one of: a polished material; and an as-cut semiconductor material to an etching solution. The method also includes positive biasing at atypically highly positive (anodic) potentials. The specifically controlled and directed illumination of the positively biased semiconductor material surface contacted and wetted by the etching solution significantly increases the value of the anodic current density (A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination by light of the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material, and that formed therefrom.
摘要翻译：一种使用无氢氟酸（HF）溶液中的正电位溶解（PPD）对半导体材料进行电化学蚀刻的方法。该方法包括：经过抛光的材料之一; 以及切割半导体材料到蚀刻溶液。该方法还包括非正常高阳性（阳极）电位的正偏置。由蚀刻溶液接触和润湿的正偏置半导体材料表面的特定控制和定向照明显着增加了半导体材料的阳极电流密度（A / cm 2）的值。以非常高的阳极（阳极）电位施加正偏压，通过与蚀刻溶液接触和润湿的半导体材料表面的光特异性地控制和引导照明。这是为了能够对半导体材料的蚀刻速率和程度以及由此形成的速率和程度产生积极的协同效应而进行的必要和充分的时间。

4. 发明授权

US06830673B2 Anode assembly and method of reducing sludge formation during electroplating 失效
标题翻译：阳极组装及减少电镀过程中污泥形成的方法
公开(公告)号：US06830673B2
公开(公告)日：2004-12-14
申请号：US10039275
申请日：2002-01-04
申请人： Joseph Yahalom , David Starosvetsky , Joseph Hazan
发明人： Joseph Yahalom , David Starosvetsky , Joseph Hazan
IPC分类号： C25D2112
CPC分类号： C25D7/12 , C25D17/001 , C25D17/10 , C25D21/18
摘要： A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.
摘要翻译：可以向消耗性阳极提供更高的施加电位，以减少电镀期间的污泥形成。例如，通过将阳极的暴露表面积减小到电镀槽中的电解质溶液，可以向可消耗阳极提供更高的施加电位。消耗性阳极可以包括单个阳极或耦合到电源的正极的阳极阵列，其中阳极的暴露表面积小于阴极暴露于电解质溶液的表面积。在另一个实例中，通过增加电镀电池的电位，可以向可消耗的阳极提供更高的施加电位。

5. 发明申请

US20050148198A1 Texturing a semiconductor material using negative potential dissolution (NPD) 审中-公开
标题翻译：使用负电位溶解（NPD）对半导体材料进行纹理化
公开(公告)号：US20050148198A1
公开(公告)日：2005-07-07
申请号：US10750969
申请日：2004-01-05
申请人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
发明人： Yair Ein-Eli , David Starosvetsky , Joseph Yahalom
IPC分类号： B23H3/00 , H01L21/00
CPC分类号： H01L31/18 , C25F3/12 , H01L31/02363 , Y02E10/50
摘要： Texturing a semiconductor material using negative potential dissolution (NPD), by applying highly negative (cathodic) potentials during conditions of wet etching, and a textured semiconductor material formed therefrom. Semiconductor material is subjected to wet etching conditions, negative biasing at more negative than −60 V, and, specifically controlled and directed illumination by optically processed non-ambient light, resulting in significant increase in values of cathodic current density, and, rate and extent of texturing, of the semiconductor material as a function of time. As cut unpolished semiconductor material is subjected to wet etching conditions and negative biasing, during non-specifically controlled and directed illumination by unprocessed ambient light. Illumination of the as cut unpolished semiconductor material is not needed for increasing values of cathodic current density, and, rate and extent of the texturing, and therefore, upon type of textured as cut unpolished semiconductor material formed therefrom. Particularly applicable to manufacturing solar cells from semiconductor materials.
摘要翻译：使用负电位溶解（NPD），通过在湿蚀刻条件期间施加高负（阴极）电位和由其形成的织构化的半导体材料来纹理化半导体材料。半导体材料经受湿蚀刻条件，负偏压大于-60V，特别是通过光学处理的非环境光进行控制和定向照明，导致阴极电流密度值的显着增加，以及速率和程度的纹理，作为时间的函数的半导体材料。在未经处理的环境光的非特异性控制和定向照明期间，切割未抛光的半导体材料经受湿蚀刻条件和负偏压。为了提高阴极电流密度的值，以及纹理化的速率和程度，因此不需要对切割的未抛光的半导体材料照明，因此，由其形成的纹理切割未抛光的半导体材料的类型。特别适用于从半导体材料制造太阳能电池。

6. 发明授权

US5382347A Protective coatings for metal parts to be used at high temperatures 失效
标题翻译：在高温下使用的金属部件的保护涂层
公开(公告)号：US5382347A
公开(公告)日：1995-01-17
申请号：US966975
申请日：1992-10-26
申请人： Joseph Yahalom
发明人： Joseph Yahalom
IPC分类号： C25D11/12 , C25D11/26 , C25D11/34
CPC分类号： C25D11/26 , C25D11/12 , Y10S205/917
摘要： A method for producing protecting layers on a metal selected from aluminum, titanium and zirconium, or alloys thereof, involves at least two anodic oxidation steps producing oxide layers and a thermal treatment which is carried out before or simultaneously with last anodic oxidation step. The treated metal according to the invention is protected even at high temperatures and under conditions of thermal cycling.
摘要翻译：在选自铝，钛和锆或其合金的金属上制备保护层的方法包括至少两个阳极氧化步骤，产生氧化物层和在最后的阳极氧化步骤之前或同时进行的热处理。根据本发明的被处理金属即使在高温和热循环条件下也被保护。

7. 发明授权

US5057388A Method for the preparation of mask for X-ray lithography 失效
标题翻译：制备X射线光刻掩模的方法
公开(公告)号：US5057388A
公开(公告)日：1991-10-15
申请号：US447752
申请日：1989-12-08
申请人： Joseph Yahalom
发明人： Joseph Yahalom
IPC分类号： G03F1/22
CPC分类号： G03F1/22 , Y10S430/168
摘要： A method of obtaining a mask for X-ray lithography having a thin oxide film supported on an annular silicon base includes the following steps:(a) deposition of an oxide layer such as titania or zirconia, on a silicon or copper substrate;(b) etching selectively a portion of the backside of the substrate, obtaining a membrane on the etched portion; and(c) obtaining a pattern delineation through a photoresist on the membrane framed by the silicon or copper substrate.The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.
摘要翻译：获得具有负载在环状硅基底上的薄氧化膜的X射线光刻用掩模的方法包括以下步骤：（a）在硅或铜基底上沉积二氧化钛或氧化锆等氧化物层; （b）选择性地蚀刻衬底背面的一部分，获得蚀刻部分上的膜; 和（c）通过由硅或铜基底构成的膜上的光致抗蚀剂获得图案描绘。根据本发明制备的掩模即使在掩模制备和使用期间产生的应力下也不会遭受任何变形并保持其精度。

8. 发明授权

US5158663A Protective coatings for metal parts to be used at high temperatures 失效
标题翻译：在高温下使用的金属部件的保护涂层
公开(公告)号：US5158663A
公开(公告)日：1992-10-27
申请号：US783023
申请日：1991-10-25
申请人： Joseph Yahalom
发明人： Joseph Yahalom
IPC分类号： C25D11/12 , C25D11/18 , C25D11/26
CPC分类号： C25D11/12 , C25D11/26 , Y10S205/917
摘要： A method for producing protecting layers on a metal selected from aluminum, titanium and zirconium, or alloys thereof, involves at least two anodic oxidation steps producing oxide layers and a thermal treatment which is carried out before the last anodic oxidation step. The treated metal according to the invention is protected even at high temperatures and under conditions of thermal cycling.

9. 发明授权

US5096791A Method for preparation of mask for X-ray lithography 失效
标题翻译：用于制备X射线光刻的掩模的方法
公开(公告)号：US5096791A
公开(公告)日：1992-03-17
申请号：US442868
申请日：1989-11-29
申请人： Joseph Yahalom
发明人： Joseph Yahalom
IPC分类号： G03F1/22 , H01L21/027
CPC分类号： G03F1/22 , Y10S430/168
摘要： A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) etching selectively a portion of the backside of said substrate, obtaining a thin membrane of oxidized metal at the etched portion; and (d) obtaining a pattern delineation through a photoresist on said membrane framed by the silicon substrate. A most preferred deposited metal is aluminum which is converted to aluminum oxide. Then a portion of the silicon substrate is removed in order to expose the aluminum oxide membrane attached to the remaining silicon substrate. The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.
摘要翻译：一种获得具有负载在环状硅基底上的薄氧化金属膜的X射线光刻掩模的方法。该方法包括以下步骤：（a）在硅晶片上沉积金属层; （b）金属层的氧化以形成连续的薄氧化物层; （c）选择性地蚀刻所述衬底的背面的一部分，在蚀刻部分获得氧化金属薄膜; 和（d）通过由硅衬底框架的所述膜上的光致抗蚀剂获得图案描绘。最优选的沉积金属是铝，其被转化为氧化铝。然后去除硅衬底的一部分以暴露附着到剩余硅衬底的氧化铝膜。根据本发明制备的掩模即使在掩模制备和使用期间产生的应力下也不会遭受任何变形并保持其精度。

10. 发明授权

US4652348A Method for the production of alloys possessing high elastic modulus and improved magnetic properties by electrodeposition 失效
标题翻译：通过电沉积生产具有高弹性模量和改善磁性能的合金的方法
公开(公告)号：US4652348A
公开(公告)日：1987-03-24
申请号：US815860
申请日：1986-01-03
申请人： Joseph Yahalom , Ori Zadok
发明人： Joseph Yahalom , Ori Zadok
IPC分类号： C25D3/56 , C25D3/58 , C25D5/14 , C25D5/18 , C25D5/10 , C25D5/12
CPC分类号： C25D5/18 , C25D3/58 , C25D5/14 , Y10S204/09
摘要： The present invention relates to a method for the electrodeposition of an ordered alloy structured in alternate discrete layers said alloys possessing high elastic modulus and adjustable magnetic susceptibility. According to the invention, the electrodeposition of at least two metals, characterized by a redox potential gap of at least 0.1 V between said metals, is obtained by the pulse plating technique with a frequency in the range of 0.02 Hertz to 15 Hertz. The concentrations of the noblest metal in the electrodeposition solution should be in the range of 0.001M to 2.0M while that of the less noble metal is about its saturation at room temperature. The discrete layers obtained according to the method are less than 90 Angstroms thickness, being substantially pure. Examples of the metals to be electrodeposited according to the invention are copper-nickel; copper-palladium; nickel-gold; copper-nickel-iron and corresponding alloys with cobalt or iron replacing nickel.

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