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    • 5. 发明授权
    • Infrared detector array with an elevated thin film
    • 具有升高的薄膜的红外探测器阵列
    • US5959298A
    • 1999-09-28
    • US665135
    • 1996-06-14
    • James F. BelcherRobert A. Owen
    • James F. BelcherRobert A. Owen
    • H01L27/146H01L37/02G01J5/54
    • H01L37/02H01L27/1465
    • A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A shallow etch stop trench (46) is first ion milled around each ceramic island on front side and then filled with an etch stop material (e.g. parylene 48). An optical coat (e.g transparent metal layer 54, transparent organic layer 56 and conductive metallic layer 58) is elevated above the etch stop material by an elevation layer (e.g. polyimide 49). For some applications, it has been experimentally verified that there is no loss, and sometimes a measured increase, in optical efficiency when the optical coating is not planar in topology. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 86) containing a massive array of sensing circuits.
    • 新颖的网状阵列包括使用独特的图案化方法由新型材料制成的陶瓷岛(例如BST 40)。 首先在前侧的每个陶瓷岛周围离子研磨浅蚀刻停止沟槽(46),然后用蚀刻停止材料(例如聚对二甲苯48)填充。 光学涂层(例如透明金属层54,透明有机层56和导电金属层58)通过仰角层(例如聚酰亚胺49)在蚀刻停止材料上方升高。 对于一些应用,已经通过实验证实,当光学涂层在拓扑结构中不是平面的时,光学效率没有损失,有时是测量的增加。 新颖的制造方法还提供了将大量陶瓷岛中的每一个的便利的电和机械结合到包含大量感测电路阵列的信号处理器基板(例如Si 86)。
    • 7. 发明授权
    • Infrared detector thermal isolation structure and method
    • 红外探测器热隔离结构及方法
    • US5426304A
    • 1995-06-20
    • US182865
    • 1994-01-13
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • G01J1/02G01J5/02G01J5/12G01J5/34H01L37/02G01J5/06
    • H01L37/02
    • In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a corresponding focal plane array (30, 130, and 230) of thermal sensors (40, 140, and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flowpath (V.sub.s) for the respective thermal sensor (40 and 240). The mesa conductors (56, 58, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242 and 243) having a void space (277 and 279) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30, 130 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
    • 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路衬底(70和170)上,用于电连接和机械地结合相应的焦平面阵列(30 ,130和230)热传感器(40,140和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(Vs)。 台面导体(56,58,156和158)可用于向具有空隙空间(277和279)或一对铁电元件(42)的单个铁电元件(242和243)提供偏置电压(VB) 和44)。 当焦平面阵列(30,130和230)被结合到相应的台面型结构(52,54和152)阵列时,热隔离但是导电的路径被提供在电极(43和45)之间 热传感器(40和240)以及集成电路基板(70和74)的相应接触焊盘(72和172)。
    • 8. 发明授权
    • Dual etching of ceramic materials with an elevated thin film
    • 陶瓷材料的双重蚀刻具有升高的薄膜
    • US5679267A
    • 1997-10-21
    • US586358
    • 1996-01-16
    • James F. BelcherRobert A. Owen
    • James F. BelcherRobert A. Owen
    • H01L27/146H01L37/02B44C1/22
    • H01L37/02H01L27/1465
    • A novel reticulated array comprises islands of ceramic (e.g. BST 40) which are fabricated from novel materials using unique methods of patterning. A shallow etch stop trench (46) is first ion milled around each ceramic island on the front side and then filled with an etch step material (e.g. parylene 48). An optical coat (e.g transparent metal layer 54, transparent organic layer 56 and conductive metallic layer 58) is elevated above the etch step material by an elevation layer (e.g. polyimide 49). For some applications, it has been experimentally verified that there is no loss, and sometimes a measured increase, in optical efficiency when the optical coating is not planar in topology. Novel fabrication methods also provide for the convenient electrical and mechanical bonding of each of the massive number of ceramic islands to a signal processor substrate (e.g. Si 86) containing a massive array of sensing circuits.
    • 新颖的网状阵列包括使用独特的图案化方法由新型材料制成的陶瓷岛(例如BST 40)。 首先在前侧的每个陶瓷岛周围离子研磨浅蚀刻停止沟槽(46),然后填充蚀刻步骤材料(例如聚对二甲苯48)。 光学涂层(例如透明金属层54,透明有机层56和导电金属层58)通过仰角层(例如聚酰亚胺49)在蚀刻步骤材料上方升高。 对于一些应用,已经通过实验证实,当光学涂层在拓扑结构中不是平面的时,光学效率没有损失,有时是测量的增加。 新颖的制造方法还提供了将大量陶瓷岛中的每一个的便利的电和机械结合到包含大量感测电路阵列的信号处理器基板(例如Si 86)。